SPS01N60C3

Mfr. #:: SPS01N60C3
製造商:: Infineon Technologies
描述:: MOSFET N-Ch 650V 800mA IPAK-3 CoolMOS C3
生命週期:: 製造商新產品
數據表:: SPS01N60C3 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 通孔

包裝/案例：: TO-251-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 600 V

Id - 連續漏極電流：: 800 mA

Rds On - 漏源電阻：: 6 Ohms

Vgs th - 柵源閾值電壓：: 2.1 V

Vgs - 柵源電壓：: 20 V

Qg - 門電荷：: 3.9 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 11 W

配置：: 單身的

頻道模式：: 增強

商品名：: 酷摩

打包：: 管子

高度：: 6.22 mm

長度：: 6.73 mm

系列：: CoolMOS C3

晶體管類型：: 1 N-Channel

寬度：: 2.38 mm

品牌：: 英飛凌科技

秋季時間：: 30 ns

產品類別：: MOSFET

上升時間：: 25 ns

出廠包裝數量：: 1500

子類別：: MOSFET

典型關斷延遲時間：: 55 ns

典型的開啟延遲時間：: 30 ns

第 # 部分別名：: SP000307396 SPS01N60C3BKMA1

單位重量：: 0.139332 oz

Tags: SPS01, SPS0, SPS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SPS01N60C3 描述

***p One Stop Japan: Trans MOSFET N-CH 650V 0.8A 3-Pin(3+Tab) TO-251 Tube

***ical: Trans MOSFET N-CH 650V 0.8A 3-Pin(3+Tab) TO-251

***et: Trans MOSFET N-CH 650V 0.8A 3-Pin TO-251 Tube

***i-Key: MOSFET N-CH 650V 800MA TO251-3

***nell: MOSFET, N, TO-251

***ark: MOSFET, N, TO-251; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:0.8A; On State Resistance:6ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-251; ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:800mA; Drain Source Voltage Vds:650V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:11W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:800mA; Package / Case:TO-251; Power Dissipation Pd:11W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Market price

型號	製造商	描述	庫存	價格
SPS01N60C3 DISTI # C1S322000119705	Infineon Technologies AG	Trans MOSFET N-CH 650V 0.8A 3-Pin(3+Tab) TO-251 Tube RoHS: Compliant	25	10:$0.5610
SPS01N60C3 DISTI # SPS01N60C3-ND	Infineon Technologies AG	MOSFET N-CH 650V 800MA TO251-3 RoHS: Compliant Min Qty: 1500 Container: Tube	Limited Supply - Call
SPS01N60C3 DISTI # SP000307396	Infineon Technologies AG	Trans MOSFET N-CH 650V 0.8A 3-Pin TO-251 Tube (Alt: SP000307396) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 1450	1:€0.6919 10:€0.5799 25:€0.4849 50:€0.4219 100:€0.4139 500:€0.4029 1000:€0.3949
SPS01N60C3	Infineon Technologies AG	Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-251AA RoHS: Compliant	43500	1000:$0.3200 500:$0.3400 100:$0.3600 25:$0.3700 1:$0.4000
SPS01N60C3BKMA1	Infineon Technologies AG	Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Not Compliant	30000	1000:$0.4300 500:$0.4500 100:$0.4700 25:$0.4900 1:$0.5300
SPS01N60C3 DISTI # 726-SPS01N60C3	Infineon Technologies AG	MOSFET N-Ch 650V 800mA IPAK-3 CoolMOS C3 RoHS: Compliant	1005	1:$1.0400 10:$0.8270 100:$0.6060 500:$0.5790 1000:$0.4550 2500:$0.3860 5000:$0.3670 10000:$0.3510
SPS01N60C3 DISTI # 1664126	Infineon Technologies AG	MOSFET, N, TO-251 RoHS: Compliant	0	1:$1.6500 10:$1.3200 100:$0.9590 500:$0.9170 1000:$0.7210 2500:$0.6960

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