OMO ElectronicOMO Electronic
Expand menu
您好，登錄我的帳戶
0 購物車

FDU7N60NZTU

FDU7N60NZTU
Mfr. #:
FDU7N60NZTU
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET N-Channel MOSFET 600V 5.5A 1.25Ohm
生命週期:
製造商新產品
數據表:
FDU7N60NZTU 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-251-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
5.5 A
Rds On - 漏源電阻：
1.05 Ohms
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
90 W
配置：
單身的
商品名：
單場效應晶體管
打包：
管子
高度：
6.3 mm
長度：
6.8 mm
系列：
FDU7N60NZTU
晶體管類型：
1 N-Channel
寬度：
2.5 mm
品牌：
安森美半導體/飛兆半導體
產品類別：
MOSFET
出廠包裝數量：
5040
子類別：
MOSFET
單位重量：
0.012102 oz
Tags
FDU7N60NZ, FDU7N60N, FDU7N6, FDU7N, FDU7, FDU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, IPAK
*** Stop Electro
Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM, 500 V, 6 A, 900 mΩ, IPAK
***et
Trans MOSFET N-CH 500V 6A 3-Pin(3+Tab) IPAK Rail
***r Electronics
Power Field-Effect Transistor, 6A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
MOSFET, N-CH, 500V, 6A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; No. of Pins:3Pins RoHS Compliant: Yes
***emi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, IPAK
***nell
MOSFET, N, 600V, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:4.6A; Resistance, Rds On:0.95ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251AA; Current, Idm Pulse:13.8A; No. of Pins:3; Power Dissipation:54W; Power, Pd:54W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds:600V; Voltage, Vds Max:600V; Voltage, Vgs th Max:5V; dv/dt:10V/µs
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in IPAK package
***ical
Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) IPAK Tube
***(Formerly Allied Electronics)
Power MOSFET Nch MDmeshII plus 600V 4.5A
*** Electronic Components
MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2
***r Electronics
Power Field-Effect Transistor, 4.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***S
French Electronic Distributor since 1988
***icroelectronics SCT
Power MOSFETs, 600V, 4.5A, IPAK, Tube
***icroelectronics
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package
***ure Electronics
N-Channel 600 V 950 mOhm Through Hole Mdmesh II Plus Power Mosfet - IPAK
***r Electronics
Power Field-Effect Transistor, 5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ure Electronics
E Series N Channel 700 V 900 mO 34 nC Through Hole Power Mosfet - TO-251
***ical
Trans MOSFET N-CH 620V 6A 3-Pin(3+Tab) TO-251
***el Electronic
MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
***et Europe
Trans MOSFET N-CH 650V 4.3A 3-Pin TO-251 Tube
***ronik
N-CH 600V 4,3A 1000mOhm TO251
*** Electronics
COOLMOS N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
型號 製造商 描述 庫存 價格
FDU7N60NZTU
DISTI # FDU7N60NZTU-ND		ON SemiconductorMOSFET N-CH 600V SGL IPAK
RoHS: Compliant
Min Qty: 5040
Container: Tube		Temporarily Out of Stock
  • 5040:$0.6291
FDU7N60NZTU
DISTI # FDU7N60NZTU		ON SemiconductorMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: FDU7N60NZTU)
RoHS: Compliant
Min Qty: 5040
Container: Tube		Americas - 0
  • 5040:$0.5619
  • 10080:$0.5579
  • 20160:$0.5509
  • 30240:$0.5439
  • 50400:$0.5299
FDU7N60NZTU
DISTI # 54T8364		ON SemiconductorUF2 600V 1.25OHM IPAK / TUBE0
  • 1:$1.4100
  • 10:$1.2100
  • 100:$0.9250
  • 500:$0.8170
  • 1000:$0.7140
  • 2500:$0.5770
  • 10000:$0.5590
FDU7N60NZTUON Semiconductor 
RoHS: Not Compliant		5040
  • 1000:$0.6300
  • 500:$0.6700
  • 100:$0.6900
  • 25:$0.7200
  • 1:$0.7800
FDU7N60NZTUFairchild Semiconductor CorporationPower Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
RoHS: Compliant		84030
  • 1000:$0.6300
  • 500:$0.6700
  • 100:$0.6900
  • 25:$0.7200
  • 1:$0.7800
FDU7N60NZTU
DISTI # 512-FDU7N60NZTU		ON SemiconductorMOSFET N-Channel MOSFET 600V 5.5A 1.25Ohm
RoHS: Compliant		5000
  • 1:$1.4200
  • 10:$1.2100
  • 100:$0.9250
  • 500:$0.8180
  • 1000:$0.6450
  • 2500:$0.5720
  • 10000:$0.5510
FDU7N60NZTU
DISTI # 8070710P		ON SemiconductorMOSFETFAIRCHILDFDU7N60NZTU, TU4560
  • 50:£0.3840
圖片 型號 描述
UCC27511ADBVR

Mfr.#: UCC27511ADBVR

OMO.#: OMO-UCC27511ADBVR

 Gate Drivers Single Driver
ULN2803A

Mfr.#: ULN2803A

OMO.#: OMO-ULN2803A

 Darlington Transistors Eight NPN Array
MURS140T3G

Mfr.#: MURS140T3G

OMO.#: OMO-MURS140T3G

 Rectifiers 400V 1A Ultrafast
MBRS360T3G

Mfr.#: MBRS360T3G

OMO.#: OMO-MBRS360T3G

 Schottky Diodes & Rectifiers 3A 60V
MBRD1045T4G

Mfr.#: MBRD1045T4G

OMO.#: OMO-MBRD1045T4G

 Schottky Diodes & Rectifiers SCHOTTKY BARRIER RECTIFIE
C3D08060G

Mfr.#: C3D08060G

OMO.#: OMO-C3D08060G

 Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 600V, 8A
MM74HC541SJ

Mfr.#: MM74HC541SJ

OMO.#: OMO-MM74HC541SJ

 Buffers & Line Drivers Octal 3-STATE Buf
X-NUCLEO-IHM03A1

Mfr.#: X-NUCLEO-IHM03A1

OMO.#: OMO-X-NUCLEO-IHM03A1

 Power Management IC Development Tools High power stepper motor driver expansion board based on powerSTEP01 for STM32 Nucleo
STFH10N60M2

Mfr.#: STFH10N60M2

OMO.#: OMO-STFH10N60M2

 MOSFET N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
STFH10N60M2

Mfr.#: STFH10N60M2

OMO.#: OMO-STFH10N60M2-STMICROELECTRONICS

 MOSFET NCH 600V 7.5A TO220
可用性
庫存:
Available
訂購:
1986
輸入數量:
FDU7N60NZTU的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$0.95
US$0.95
10
US$0.82
US$8.17
100
US$0.63
US$62.70
500
US$0.55
US$277.00
1000
US$0.44
US$437.00
2500
US$0.39
US$970.00
10000
US$0.37
US$3 730.00
25000
US$0.36
US$9 025.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
從...開始
最新產品
More Newest Products
Top