MMBT3906LT1XT

Mfr. #:: MMBT3906LT1XT
製造商:: Infineon Technologies
描述:: Bipolar Transistors - BJT AF TRANS GP BJT PNP 40V 0.2A
生命週期:: 製造商新產品
數據表:: MMBT3906LT1XT 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: 雙極晶體管 - BJT

RoHS：: Y

安裝方式：: 貼片/貼片

包裝/案例：: SOT-23-3

晶體管極性：: PNP

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 40 V

集電極-基極電壓 VCBO：: 40 V

發射極基極電壓 VEBO：: 6 V

集電極-發射極飽和電壓：: 0.4 V

增益帶寬積 fT：: 250 MHz

最低工作溫度：: - 65 C

最高工作溫度：: + 150 C

打包：: 捲軸

品牌：: 英飛凌科技

連續集電極電流：: 200 mA

Pd - 功耗：: 330 mW

產品類別：: BJT - 雙極晶體管

出廠包裝數量：: 3000

子類別：: 晶體管

第 # 部分別名：: 3906 LT1 MMBT MMBT3906LT1HTSA1 SP000011678

單位重量：: 0.000282 oz

Tags: MMBT3906LT1, MMBT3906LT, MMBT3906L, MMBT3906, MMBT390, MMBT39, MMBT3, MMBT, MMB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MMBT3906LT1XT 描述

***et: Transistor GP BJT PNP 40V 0.2A 3-Pin SOT-23 T/R

***el Electronic: Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3

***eco: GREEN, AF TRANSISTORS

***el Nordic: Contact for details

*** Electronic Components: Bipolar Transistors - BJT Switching Transistor NPN

***ure Electronics: BSV52 Series 12 V 200 mA NPN Surface Mount Switching Transistor - SOT-23-3

***r Electronics: Small Signal Bipolar Transistor, 0.2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon

***et Europe: Trans GP BJT NPN 12V 0.2A 3-Pin SOT-23 T/R

***ment14 APAC: BIPOLAR Transistor, NPN, 12V; Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition

***i-Key: TRANSISTOR NPN 12V 200MA SOT-23

***enic: 12V 225mW 200mA 40@10mA1V 400MHz 400mV@50mA5mA NPN -55¡Í~+150¡Í@(Tj) SOT-23-3 Bipolar Transistors - BJT ROHS

***rchild Semiconductor: This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21.

***ure Electronics: MMBT3906 Series PNP 40 V 300 mW Small Signal Transistor Surface Mount- SOT-23-3

***icontronic: Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon

***eco: MMBT3906-7-F,BIPOLAR TRANSISTO R PNP SOT-23 RING TERMINAL

***ter Electronics: BIPOLAR TRANSISTOR PNP SOT-23 ROHS 3K

***ment14 APAC: TRANSISTOR, PNP, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:300mW; DC Collector Current:-200mA; DC Current Gain hFE:100; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; Collector Emitter Voltage Vces:-400mV; Current Ic Continuous a Max:-200mA; Gain Bandwidth ft Typ:250MHz; Hfe Min:100; Package / Case:SOT-23; Power Dissipation Pd:300mW; Termination Type:SMD; Transistor Type:Small Signal

***eco: Transistor General Purpose BJT NPN 40 Volt 0.2A Automotive 3-Pin SOT-23

***ure Electronics: MMBT3904 Series NPN 40 V 350 mW Small Signal Transistor Surface Mount- SOT-23-3

***icontronic: Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon

***ter Electronics: BIPOLAR TRANSISTOR NPN SOT-23 ROHS 3K

***ment14 APAC: Transistor, NPN, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:300mW;

***nell: TRANSISTOR, NPN, SOT23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 300mW; DC Collector Current: 200mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 200mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal

***ark: Bipolar (Bjt) Single Transistor, Npn, 45 V, 125 Mhz, 350 Mw, 200 Ma, 250 Rohs Compliant: Yes

***ure Electronics: BCX70 Series 45 V 0.2 A 350 mW SMT NPN Epitaxial Silicon Transistor - SOT-23-3

***r Electronics: Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon

***Yang: Trans GP BJT NPN 45V 0.2A 3-Pin SOT-23 T/R - Tape and Reel

***i-Key: TRANSISTOR NPN 45V 200MA SOT-23

***ment14 APAC: BIPOLAR TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:125MHz; Power Dissipation Pd:350mW; DC Collector Current:200mA; DC Current Gain hFE:250; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:550mV; Current Ic Continuous a Max:200mA; Gain Bandwidth ft Typ:125MHz; Hfe Min:40; Package / Case:SOT-23; Power Dissipation Pd:350mW; Termination Type:SMD

***r Electronics: Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

***et: Transistor GP BJT NPN 40V 0.2A 3-Pin SOT-23 T/R

*** Electronics: NPNBipolar (BJT) Transistor MMBT3904 SOT-23(ON)

***rchild Semiconductor: This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

***nell: TRANSISTOR, NPN SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 350mW; DC Collector Current: 200mA; DC Current Gain hFE: 300hFE; Transistor Case

***ark: Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):30; Package/Case:SOT-23; C-E Breakdown Voltage:40V; DC Collector Current:0.2A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes

***ment14 APAC: TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:350mW; DC Collector Current:200mA; DC Current Gain hFE:300; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:200mA; Current Ic hFE:10mA; Device Marking:BT3904; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:300MHz; Hfe Min:100; No. of Transistors:1; Noise Factor Max:5dB; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; SMD Marking:1A; Termination Type:SMD; Voltage Vcbo:60V

***ure Electronics: MMBT4126 Series 25 V 200 mA SMT PNP Small Signal Transistor - SOT-23-3

***ical: Trans GP BJT PNP 25V 0.2A 200mW 3-Pin SOT-23 T/R

***eco: BIPOLAR TRANSISTOR PNP SOT-23 ROHS 3K

Market price

型號	製造商	描述	庫存	價格
MMBT3906LT1HTSA1 DISTI # MMBT3906LT1HTSA1CT-ND	Infineon Technologies AG	TRANS PNP 40V 0.2A SOT-23 Min Qty: 1 Container: Cut Tape (CT)	51713In Stock	1000:$0.0404 500:$0.0595 100:$0.0904 10:$0.1700 1:$0.2100
MMBT3906LT1HTSA1 DISTI # MMBT3906LT1HTSA1TR-ND	Infineon Technologies AG	TRANS PNP 40V 0.2A SOT-23 Min Qty: 3000 Container: Tape & Reel (TR)	48000In Stock	150000:$0.0211 75000:$0.0238 30000:$0.0254 15000:$0.0270 6000:$0.0317 3000:$0.0365
MMBT3906LT1XT DISTI # MMBT3906LT1HTSA1	Infineon Technologies AG	Trans GP BJT PNP 40V 0.2A 3-Pin SOT-23 T/R - Tape and Reel (Alt: MMBT3906LT1HTSA1) RoHS: Compliant Min Qty: 54000 Container: Reel	Americas - 0	60000:$0.0143 114000:$0.0143 270000:$0.0143 540000:$0.0143 54000:$0.0227
MMBT3906LT1XT DISTI # 726-MMBT3906LT1XT	Infineon Technologies AG	Bipolar Transistors - BJT AF TRANS GP BJT PNP 40V 0.2A RoHS: Compliant	4360	1:$0.1900 10:$0.1770 100:$0.0630 1000:$0.0420 3000:$0.0320 9000:$0.0280 24000:$0.0250 45000:$0.0220 99000:$0.0190

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