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IKW50N65EH5XKSA1

IKW50N65EH5XKSA1
Mfr. #:
IKW50N65EH5XKSA1
製造商:
Infineon Technologies
描述:
IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a
生命週期:
製造商新產品
數據表:
IKW50N65EH5XKSA1 數據表
交貨:
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ECAD Model:
更多信息:
IKW50N65EH5XKSA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-247-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
650 V
集電極-發射極飽和電壓：
1.65 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
80 A
Pd - 功耗：
275 W
最低工作溫度：
- 40 C
最高工作溫度：
+ 175 C
系列：
TRENCHSTOP 5 H5
打包：
管子
高度：
20.7 mm
長度：
15.87 mm
寬度：
5.31 mm
品牌：
英飛凌科技
柵極-發射極漏電流：
100 nA
產品類別：
IGBT晶體管
出廠包裝數量：
240
子類別：
IGBT
商品名：
戰壕
第 # 部分別名：
IKW50N65EH5 SP001257944
單位重量：
0.213383 oz
Tags
IKW50N65E, IKW50N65, IKW50N6, IKW50N, IKW5, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 80A 275000mW 3-Pin(3+Tab) TO-247 Tube
***ineon SCT
High Speed 650 V, hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO247-3, RoHS
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:275W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
Home Appliance Solutions
Infineon Home Appliance Solutions offer a range of products for low power drive in-home appliance applications. These devices meet and exceed the most rigorous requirements for reliability, quality, security and energy efficiency. Included in this portfolio are RC-Drives IGBTs, fast IGBTs, discrete IGBTs, rapid diodes, gate driver ICs, microcontrollers: XMC™ and iMotion™, IPM: CIPOS™ and IRAM.Learn More
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
型號 製造商 描述 庫存 價格
IKW50N65EH5XKSA1
DISTI # V99:2348_06378019		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 2750000mW 3-Pin(3+Tab) TO-247 Tube230
  • 500:$3.4010
  • 250:$3.7630
  • 100:$4.0730
  • 10:$4.6620
  • 1:$6.0862
IKW50N65EH5XKSA1
DISTI # V36:1790_06378019		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 2750000mW 3-Pin(3+Tab) TO-247 Tube0
  • 240000:$2.4530
  • 120000:$2.4590
  • 24000:$3.3440
  • 2400:$5.2350
  • 240:$5.5700
IKW50N65EH5XKSA1
DISTI # IKW50N65EH5XKSA1-ND		Infineon Technologies AGIGBT TRENCH 650V 80A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		206In Stock
  • 2640:$2.9485
  • 720:$3.6709
  • 240:$4.3122
  • 25:$4.9756
  • 10:$5.2630
  • 1:$5.8600
IKW50N65EH5XKSA1
DISTI # 31343989		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 2750000mW 3-Pin(3+Tab) TO-247 Tube230
  • 3:$6.0862
IKW50N65EH5XKSA1
DISTI # IKW50N65EH5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW50N65EH5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$2.5900
  • 1440:$2.6900
  • 960:$2.7900
  • 480:$2.8900
  • 240:$2.9900
IKW50N65EH5XKSA1
DISTI # SP001257944		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: SP001257944)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€2.1900
  • 500:€2.2900
  • 100:€2.3900
  • 50:€2.4900
  • 25:€2.5900
  • 10:€2.6900
  • 1:€2.9900
IKW50N65EH5XKSA1
DISTI # 34AC1635		Infineon Technologies AGIGBT, SINGLE, 650V, 80A, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:275W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes240
  • 500:$3.5200
  • 250:$3.9300
  • 100:$4.1400
  • 50:$4.3500
  • 25:$4.5700
  • 10:$4.7800
  • 1:$5.6300
IKW50N65EH5XKSA1
DISTI # 726-IKW50N65EH5XKSA1		Infineon Technologies AGIGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e
RoHS: Compliant		0
  • 1:$5.5700
  • 10:$4.7300
  • 100:$4.1000
  • 250:$3.8900
  • 500:$3.4900
IKW50N65EH5XKSA1
DISTI # 2781035		Infineon Technologies AGIGBT, SINGLE, 650V, 80A, TO-24710
  • 500:£2.6600
  • 250:£2.9700
  • 100:£3.1300
  • 10:£3.6100
  • 1:£4.7100
IKW50N65EH5XKSA1
DISTI # 2781035		Infineon Technologies AGIGBT, SINGLE, 650V, 80A, TO-247
RoHS: Compliant		240
  • 1000:$3.9800
  • 500:$4.0500
  • 250:$4.2700
  • 100:$4.5200
  • 10:$5.1200
  • 1:$5.4600
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可用性
庫存:
Available
訂購:
3000
輸入數量:
IKW50N65EH5XKSA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$5.57
US$5.57
10
US$4.73
US$47.30
100
US$4.10
US$410.00
250
US$3.89
US$972.50
500
US$3.49
US$1 745.00
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