IPB048N15N5LFATMA1

IPB048N15N5LFATMA1
Mfr. #:
IPB048N15N5LFATMA1
製造商:
Infineon Technologies
描述:
MOSFET
生命週期:
製造商新產品
數據表:
IPB048N15N5LFATMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IPB048N15N5LFATMA1 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
TO-263-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
150 V
Id - 連續漏極電流:
120 A
Rds On - 漏源電阻:
3.9 mOhms
Vgs th - 柵源閾值電壓:
3.3 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
84 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
313 W
配置:
單身的
頻道模式:
增強
商品名:
優化MOS
打包:
捲軸
系列:
OptiMOS 5
晶體管類型:
1 N-Channel
品牌:
英飛凌科技
正向跨導 - 最小值:
17 S
秋季時間:
10 ns
產品類別:
MOSFET
上升時間:
48 ns
出廠包裝數量:
1000
子類別:
MOSFET
典型關斷延遲時間:
42 ns
典型的開啟延遲時間:
8 ns
第 # 部分別名:
IPB048N15N5LF SP001503860
單位重量:
0.077603 oz
Tags
IPB048N1, IPB048, IPB04, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 150V 120A 3-Pin(2+Tab) D2PAK T/R
***i-Key
MOSFET N-CH 150V 120A TO263-3
***et Europe
DIFFERENTIATED MOSFETS
***ark
Mosfet, N-Ch, 150V, 120A, 313W, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:150V; On Resistance Rds(On):0.0039Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.1V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 150V, 120A, 313W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.1V; Power Dissipation Pd:313W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CAN N, 150V, 120A, 313W, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:150V; Resistenza di Attivazione Rds(on):0.0039ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4.1V; Dissipazione di Potenza Pd:313W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET. | Summary of Features: Combination of low R DS(on) and wide safe operating area (SOA); High max. pulse current; High continuous pulse current | Benefits: Rugged linear mode operation; Low conduction losses; Higher in-rush current enabled for faster start-up and shorter down time | Target Applications: Telecom; Battery management
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
型號 製造商 描述 庫存 價格
IPB048N15N5LFATMA1
DISTI # V72:2272_18205007
Infineon Technologies AGDIFFERENTIATED MOSFETS873
  • 75000:$3.5970
  • 30000:$3.6260
  • 15000:$3.6560
  • 6000:$3.6850
  • 3000:$3.7140
  • 1000:$3.7430
  • 500:$3.7720
  • 250:$3.8010
  • 100:$4.2230
  • 50:$4.6929
  • 25:$5.2140
  • 10:$5.7940
  • 1:$6.9420
IPB048N15N5LFATMA1
DISTI # IPB048N15N5LFATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 150V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 1000:$4.6452
IPB048N15N5LFATMA1
DISTI # IPB048N15N5LFATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 150V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 500:$5.4934
  • 100:$6.5566
  • 10:$7.9740
  • 1:$8.8600
IPB048N15N5LFATMA1
DISTI # IPB048N15N5LFATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 150V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 500:$5.4934
  • 100:$6.5566
  • 10:$7.9740
  • 1:$8.8600
IPB048N15N5LFATMA1
DISTI # 32379016
Infineon Technologies AGDIFFERENTIATED MOSFETS873
  • 6000:$3.9614
  • 3000:$3.9926
  • 1000:$4.0237
  • 500:$4.0549
  • 250:$4.0861
  • 100:$4.5397
  • 50:$5.0449
  • 25:$5.6051
  • 10:$6.2286
  • 2:$7.4627
IPB048N15N5LFATMA1
DISTI # IPB048N15N5LFATMA1
Infineon Technologies AGDIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPB048N15N5LFATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$4.4900
  • 2000:$4.2900
  • 4000:$4.0900
  • 6000:$3.9900
  • 10000:$3.8900
IPB048N15N5LFATMA1
DISTI # SP001503860
Infineon Technologies AGDIFFERENTIATED MOSFETS (Alt: SP001503860)
RoHS: Compliant
Min Qty: 1000
Europe - 0
  • 1000:€4.1900
  • 2000:€3.9900
  • 4000:€3.8900
  • 6000:€3.5900
  • 10000:€3.3900
IPB048N15N5LFATMA1
DISTI # 93AC7100
Infineon Technologies AGMOSFET, N-CH, 150V, 120A, 313W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.0039ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.1V,Power RoHS Compliant: Yes910
  • 500:$3.8700
  • 250:$4.2500
  • 100:$4.4500
  • 50:$4.7900
  • 25:$5.1300
  • 10:$5.3800
  • 1:$5.9500
IPB048N15N5LFATMA1
DISTI # 726-IPB048N15N5LF
Infineon Technologies AGMOSFET
RoHS: Compliant
363
  • 1:$7.4400
  • 10:$6.7200
  • 25:$6.4100
  • 100:$5.5600
  • 250:$5.3100
  • 500:$4.8400
  • 1000:$4.2200
IPB048N15N5LFATMA1
DISTI # 2986458
Infineon Technologies AGMOSFET, N-CH, 150V, 120A, 313W, TO-263
RoHS: Compliant
898
  • 100:$6.3100
  • 50:$7.0455
  • 25:$8.1801
  • 10:$8.3265
  • 5:$8.9853
  • 1:$9.9552
IPB048N15N5LFATMA1
DISTI # 2986458
Infineon Technologies AGMOSFET, N-CH, 150V, 120A, 313W, TO-263
RoHS: Compliant
898
  • 100:£4.4700
  • 50:£4.8200
  • 10:£5.1700
  • 5:£5.9600
  • 1:£6.4900
圖片 型號 描述
ADS7951SBRGET

Mfr.#: ADS7951SBRGET

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Analog to Digital Converters - ADC 12B 1MSPS 8Ch Sgl End MicroPwr SAR ADC
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Mfr.#: TMS320F28335ZJZQ

OMO.#: OMO-TMS320F28335ZJZQ

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IRS21844MTRPBF

Mfr.#: IRS21844MTRPBF

OMO.#: OMO-IRS21844MTRPBF

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AT45DB161E-MHF2B-T

Mfr.#: AT45DB161E-MHF2B-T

OMO.#: OMO-AT45DB161E-MHF2B-T

NOR Flash 16M, 85MHz 2.3-3.6V DataFlash
ADUM5402ARWZ

Mfr.#: ADUM5402ARWZ

OMO.#: OMO-ADUM5402ARWZ

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NTB110N65S3HF

Mfr.#: NTB110N65S3HF

OMO.#: OMO-NTB110N65S3HF

MOSFET SUPERFET3 650V FRFET,110M
FDMC86102LZ

Mfr.#: FDMC86102LZ

OMO.#: OMO-FDMC86102LZ

MOSFET 100V N-Channel PowerTrench MOSFET
LT8331IMSE#PBF

Mfr.#: LT8331IMSE#PBF

OMO.#: OMO-LT8331IMSE-PBF

Switching Voltage Regulators 150V/0.5A Burst-Mode Boost/Inverting Converter
IRS21844MTRPBF

Mfr.#: IRS21844MTRPBF

OMO.#: OMO-IRS21844MTRPBF-INFINEON-TECHNOLOGIES

Gate Drivers Hlf Brdg Drvr Sft Trn On Invrt ShutDwn
ADS7951SBRGET

Mfr.#: ADS7951SBRGET

OMO.#: OMO-ADS7951SBRGET-TEXAS-INSTRUMENTS

Analog to Digital Converters - ADC 12B 1MSPS 8Ch Sgl End MicroPwr SAR ADC
可用性
庫存:
Available
訂購:
3000
輸入數量:
IPB048N15N5LFATMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$7.44
US$7.44
10
US$6.72
US$67.20
25
US$6.41
US$160.25
100
US$5.56
US$556.00
250
US$5.31
US$1 327.50
500
US$4.84
US$2 420.00
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