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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| BSP603S2LHUMA1 DISTI # V36:1790_06390875 | Infineon Technologies AG | Trans MOSFET N-CH 55V 5.2A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant | 0 |
|
| BSP603S2LHUMA1 DISTI # BSP603S2LHUMA1-ND | Infineon Technologies AG | MOSFET N-CH 55V 5.2A SOT-223 RoHS: Not compliant Min Qty: 4000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP603S2LHUMA1 DISTI # 16651955 | Infineon Technologies AG | Trans MOSFET N-CH 55V 5.2A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant | 84 |
|
| BSP603S2L DISTI # BSP603S2L | Infineon Technologies AG | Trans MOSFET N-CH 55V 5.2A 4-Pin SOT-223 T/R (Alt: BSP603S2L) RoHS: Not Compliant Min Qty: 4000 Container: Tape and Reel | Asia - 8000 |
|
| BSP603S2LHUMA1 DISTI # BSP603S2LHUMA1 | Infineon Technologies AG | Trans MOSFET N-CH 55V 5.2A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP603S2LHUMA1) RoHS: Compliant Min Qty: 4000 Container: Reel | Americas - 0 |
|
| BSP603S2LHUMA1 DISTI # SP000431792 | Infineon Technologies AG | Trans MOSFET N-CH 55V 5.2A 4-Pin SOT-223 T/R (Alt: SP000431792) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel | Europe - 0 |
|
| BSP603S2L DISTI # 726-BSP603S2L | Infineon Technologies AG | MOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS RoHS: Compliant | 0 | |
| BSP603S2LNT | Infineon Technologies AG | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 83663 |
|
| BSP603S2LHUMA1 DISTI # 4622935 | Infineon Technologies AG | MOSFET N-CHANNEL 55V 5.2A SOT223, PK | 940 |
|
| BSP603S2LHUMA1 DISTI # 4622935P | Infineon Technologies AG | MOSFET N-CHANNEL 55V 5.2A SOT223, RL | 9071 |
|
| BSP603S2L DISTI # BSP603S2L | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,55V,5.2A,1.8W,SOT223 | 3809 |
|
| BSP603S2L | Infineon Technologies AG | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 1395 |
| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: BSP61E6327HTSA1132 OMO.#: OMO-BSP61E6327HTSA1132-1190 |
- Bulk (Alt: BSP61E6327HTSA1132) |
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Mfr.#: BSP603S2LGRN OMO.#: OMO-BSP603S2LGRN-1190 |
全新原裝 |
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Mfr.#: BSP61. OMO.#: OMO-BSP61--1190 |
全新原裝 |
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Mfr.#: BSP612P OMO.#: OMO-BSP612P-1190 |
全新原裝 |
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Mfr.#: BSP613P E6327 OMO.#: OMO-BSP613P-E6327-1190 |
全新原裝 |
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Mfr.#: BSP613PL6327 OMO.#: OMO-BSP613PL6327-1190 |
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BSP61E6327XT OMO.#: OMO-BSP61E6327XT-1190 |
全新原裝 |
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Mfr.#: BSP62E7874 OMO.#: OMO-BSP62E7874-1190 |
全新原裝 |
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Mfr.#: BSP62T1 OMO.#: OMO-BSP62T1-1190 |
全新原裝 |
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Mfr.#: BSP613PE6327 OMO.#: OMO-BSP613PE6327-1190 |
全新原裝 |
