SIE850DF-T1-E3

Mfr. #:: SIE850DF-T1-E3
製造商:: Vishay / Siliconix
描述:: RF Bipolar Transistors MOSFET 30V 164A 104W 2.5mohm @ 10V
生命週期:: 製造商新產品
數據表:: SIE850DF-T1-E3 數據表
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更多信息:: SIE850DF-T1-E3 更多信息

產品屬性
屬性值

製造商: 威世 / Siliconix

產品分類: 晶體管 - FET、MOSFET - 單

打包: 捲軸

部分別名: SIE850DF-E3

安裝方式: 貼片/貼片

包裝盒: PolarPAK-10

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 5.2 W

最高工作溫度: + 150 C

最低工作溫度: - 50 C

VGS-柵極-源極-電壓: 12 V

Id 連續漏極電流: 35 A

Vds-漏-源-擊穿電壓: 30 V

Rds-On-Drain-Source-Resistance: 2.5 mOhms

晶體管極性: N通道

通道模式: 增強

Tags: SIE85, SIE8, SIE

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIE850DF-T1-E3 更多信息

N-Channel PolarPAK® Power MOSFETs: Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.

Market price

型號	製造商	描述	庫存	價格
SIE850DF-T1-E3 DISTI # 781-SIE850DF-E3	Vishay Intertechnologies	MOSFET 30V 164A 104W 2.5mohm @ 10V RoHS: Compliant	0	3000:$1.7500

相關產品

圖片	型號	描述
	Mfr.#: SIE850DF-T1-GE3 OMO.#: OMO-SIE850DF-T1-GE3	MOSFET 30V 164A 104W 2.5mohm @ 10V
	Mfr.#: SIE850DF-T1-E3 OMO.#: OMO-SIE850DF-T1-E3	MOSFET 30V 164A 104W 2.5mohm @ 10V
	Mfr.#: SIE850DF-T1-E3 OMO.#: OMO-SIE850DF-T1-E3-317	RF Bipolar Transistors MOSFET 30V 164A 104W 2.5mohm @ 10V
	Mfr.#: SIE850DF-T1-GE3 OMO.#: OMO-SIE850DF-T1-GE3-317	RF Bipolar Transistors MOSFET 30V 164A 104W 2.5mohm @ 10V