SCT3017ALHRC11

SCT3017ALHRC11
Mfr. #:
SCT3017ALHRC11
製造商:
Rohm Semiconductor
描述:
MOSFET 650V 118A 427W SIC 17mOhm TO-247N
生命週期:
製造商新產品
數據表:
SCT3017ALHRC11 數據表
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ECAD Model:
更多信息:
SCT3017ALHRC11 更多信息
產品屬性
屬性值
製造商:
羅姆半導體
產品分類:
MOSFET
RoHS:
Y
技術:
碳化矽
安裝方式:
通孔
包裝/案例:
TO-247N-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
650 V
Id - 連續漏極電流:
118 A
Rds On - 漏源電阻:
17 mOhms
Vgs th - 柵源閾值電壓:
2.7 V
Vgs - 柵源電壓:
- 4 V, 22 V
Qg - 門電荷:
172 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 175 C
Pd - 功耗:
427 W
配置:
單身的
頻道模式:
增強
打包:
管子
系列:
SCT3x
晶體管類型:
1 N-Channel
品牌:
羅姆半導體
正向跨導 - 最小值:
16 S
秋季時間:
31 ns
產品類別:
MOSFET
上升時間:
44 ns
出廠包裝數量:
30
子類別:
MOSFET
典型關斷延遲時間:
64 ns
典型的開啟延遲時間:
30 ns
Tags
SCT30, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
AEC-Q101 SiC Power MOSFETs
ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch mode power supplies. The SiC Power MOSFETs can be used to boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles.
型號 製造商 描述 庫存 價格
SCT3017ALHRC11
DISTI # SCT3017ALHRC11-ND
ROHM SemiconductorAUTOMOTIVE GRADE N-CHANNEL SIC P
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 25:$96.1000
  • 10:$98.7880
  • 1:$104.1600
SCT3017ALHRC11
DISTI # 02AH4678
ROHM SemiconductorMOSFET, N-CH, 650V, 118A, 175DEG C, 427W,Transistor Polarity:N Channel,Continuous Drain Current Id:118A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.017ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V,PowerRoHS Compliant: Yes0
  • 100:$83.5200
  • 50:$88.8600
  • 25:$90.1800
  • 10:$91.5300
  • 5:$94.2400
  • 1:$96.8400
SCT3017ALHRC11
DISTI # 755-SCT3017ALHRC11
ROHM SemiconductorMOSFET 650V 118A 427W SIC 17mOhm TO-247N
RoHS: Compliant
0
  • 1:$107.5200
  • 5:$105.5400
  • 10:$100.8000
  • 25:$96.1000
SCT3017ALHRC11
DISTI # TMOS2736
ROHM SemiconductorSiC N-CH 650V 118A 17mOhm
RoHS: Compliant
Stock DE - 0Stock HK - 0Stock US - 0
  • 450:$96.9300
SCT3017ALHRC11
DISTI # 3052180
ROHM SemiconductorMOSFET, N-CH, 650V, 118A, 175DEG C, 427W0
  • 10:£73.3200
  • 5:£77.6800
  • 1:£82.0300
SCT3017ALHRC11
DISTI # 3052180
ROHM SemiconductorMOSFET, N-CH, 650V, 118A, 175DEG C, 427W
RoHS: Compliant
0
  • 1:$146.5300
SCT3017ALHRC11ROHM SemiconductorMOSFET 650V 118A 427W SIC 17mOhm TO-247N
RoHS: Compliant
Americas -
    圖片 型號 描述
    SCT3017ALHRC11

    Mfr.#: SCT3017ALHRC11

    OMO.#: OMO-SCT3017ALHRC11

    MOSFET 650V 118A 427W SIC 17mOhm TO-247N
    SCT3017ALGC11

    Mfr.#: SCT3017ALGC11

    OMO.#: OMO-SCT3017ALGC11-1190

    MOSFET, N-CH, 650V, 118A, 175DEG C, 427W, Transistor Polarity:N Channel, Continuous Drain Current Id:118A, Drain Source Voltage Vds:650V, On Resistance Rds(on):0.017ohm, Rds(on) Test Voltage Vgs:
    SCT3017ALHRC11

    Mfr.#: SCT3017ALHRC11

    OMO.#: OMO-SCT3017ALHRC11-ROHM-SEMI

    AUTOMOTIVE GRADE N-CHANNEL SIC P
    可用性
    庫存:
    Available
    訂購:
    4000
    輸入數量:
    SCT3017ALHRC11的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$107.52
    US$107.52
    5
    US$105.54
    US$527.70
    10
    US$100.80
    US$1 008.00
    25
    US$96.10
    US$2 402.50
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