MJE13009G

Mfr. #:: MJE13009G
製造商:: ON Semiconductor
描述:: Bipolar Transistors - BJT 12A 400V 100W NPN
生命週期:: 製造商新產品
數據表:: MJE13009G 數據表
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HTML Datasheet:: MJE13009G Datasheet MJE13009G Datasheet (P4-P6)MJE13009G Datasheet (P7-P9)MJE13009G Datasheet (P10)
ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: 雙極晶體管 - BJT

RoHS：: Y

安裝方式：: 通孔

包裝/案例：: TO-220-3

晶體管極性：: NPN

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 400 V

集電極-基極電壓 VCBO：: 700 V

發射極基極電壓 VEBO：: 9 V

集電極-發射極飽和電壓：: 1 V

最大直流集電極電流：: 12 A

增益帶寬積 fT：: 4 MHz

最低工作溫度：: - 65 C

最高工作溫度：: + 150 C

直流電流增益 hFE 最大值：: 40

高度：: 9.28 mm (Max)

長度：: 10.28 mm (Max)

打包：: 管子

寬度：: 4.82 mm (Max)

品牌：: 安森美半導體

連續集電極電流：: 12 A

DC 集電極/基極增益 hfe 最小值：: 8

Pd - 功耗：: 12 W

產品類別：: BJT - 雙極晶體管

出廠包裝數量：: 50

子類別：: 晶體管

單位重量：: 0.211644 oz

Tags: MJE13009, MJE1300, MJE130, MJE13, MJE1, MJE

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MJE13009G 描述

***emi: 12 A, 400 V NPN Bipolar Power Transistor

***ical: Trans GP BJT NPN 400V 12A 3-Pin (3+Tab) TO-220AB Rail

***ark: RF Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:400V; Package/Case:3-TO-220; Power Dissipation, Pd:2W; DC Current Gain Min (hfe):6; Frequency Min:100MHz; Leaded Process Compatible:Yes ;RoHS Compliant: Yes

***th Star Micro: The MJE13009 is designed for high-voltage high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V switchmode applications such as Switching Regulators Inverters Motor Controls Solenoid/Relay drivers and Deflection circuits.

***nell: TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:4MHz; Power Dissipation Pd:2W; DC Collector Current:12A; DC Current Gain hFE:4hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018); Alternate Case Style:SOT-78B; Application Code:PHVS; Av Current Ic:12A; Collector Emitter Saturation Voltage Vce(on):1.5V; Continuous Collector Current Ic Max:12A; Current Ic @ Vce Sat:8A; Current Ic Continuous a Max:12A; Current Ic hFE:8mA; Device Marking:MJE13009; Fall Time @ Ic:0.7µs; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:4MHz; Gain Bandwidth ft Typ:4MHz; Hfe Min:6; No. of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:100W; Voltage Vcbo:10VDC; Voltage Vces:700V

Market price

型號	製造商	描述	庫存	價格
MJE13009G DISTI # MJE13009GOS-ND	ON Semiconductor	TRANS NPN 400V 12A TO220AB RoHS: Compliant Min Qty: 450 Container: Tube	Limited Supply - Call
MJE13009G DISTI # 863-MJE13009G	ON Semiconductor	Bipolar Transistors - BJT 12A 400V 100W NPN RoHS: Compliant	0
MJE13009G	ON Semiconductor	RoHS: Not Compliant	73	1000:$0.5900 500:$0.6200 100:$0.6500 25:$0.6800 1:$0.7300
MJE13009G DISTI # 9557865	ON Semiconductor	TRANSISTOR, NPN, TO-220 RoHS: Compliant	0	1:$2.0500 10:$1.7000 50:$1.4100 100:$1.2300 250:$0.8960

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