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CSD25211W1015

CSD25211W1015
Mfr. #:
CSD25211W1015
描述:
MOSFET PCh NexFET Power MOSFET
生命週期:
製造商新產品
數據表:
CSD25211W1015 數據表
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更多信息:
CSD25211W1015 更多信息 CSD25211W1015 Product Details
產品屬性
屬性值
製造商：
德州儀器
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
DSBGA-6
通道數：
1 Channel
晶體管極性：
P-通道
Vds - 漏源擊穿電壓：
20 V
Id - 連續漏極電流：
3.2 A
Rds On - 漏源電阻：
44 mOhms
Vgs th - 柵源閾值電壓：
800 mV
Vgs - 柵源電壓：
6 V
Qg - 門電荷：
3.4 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
1 W
配置：
單身的
商品名：
場效應管
打包：
捲軸
高度：
0.625 mm
長度：
1.5 mm
系列：
CSD25211W1015
晶體管類型：
1 P-Channel
寬度：
1 mm
品牌：
德州儀器
正向跨導 - 最小值：
12 S
秋季時間：
14.2 ns
產品類別：
MOSFET
上升時間：
8.8 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
36.9 ns
典型的開啟延遲時間：
13.6 ns
單位重量：
0.000060 oz
Tags
CSD252, CSD25, CSD2, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***NGYU ELECTRONICS
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***itex
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***ure Electronics
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***el Electronic
VISHAY SILICONIX SI2312BDS-T1-E3 MOSFET, N CHANNEL, 20V, 0.025OHM, 3.9A, SOT-23-3, FULL REEL
***enic
20V 3.9A 750mW 31m´Î@4.5V5A 850mV@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
***ical
Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
***roFlash
Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ark
Mosfet, N Channel, 20V, 0.025Ohm, 3.9A, Sot-23-3, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; On Resistance Rds(On):0.025Ohm; Transistor Mounting:surface Mount; Msl:- Rohs Compliant: No
***ment14 APAC
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:2312; Current Id Max:5A; Package / Case:SOT-23; Power Dissipation Pd:750µW; Pulse Current Idm:15A; SMD Marking:M2; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:850mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:0.85V; Voltage Vgs th Min:0.45V
***ure Electronics
Dual N/P-Channel 20 V 2.1/1.3 W 11.3/11 nC Silicon SMT Mosfet - 1206-8 ChipFET
***et Europe
Transistor MOSFET Array N-CH/P-CH 20V 4A 8-Pin Chip FET T/R
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Rds(on) Test Voltage, Vgs:8V; Package/Case:8-1206; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes
***ment14 APAC
DUAL N/P CHANNEL MOSFET, 20V, 1206; Tran; DUAL N/P CHANNEL MOSFET, 20V, 1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:4A; Continuous Drain Current Id, P Channel:-3.1A; Drain Source Voltage Vds, N Channel:20V
***nell
MOSFET, NP CH, 20V, 1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:1206; No. of Pins:8
***roFlash
P-Channel 20 V 42.5 mO Surface Mount Enhancement Mode Mosfet - SOT-23
***ment14 APAC
MOSFET,P CH,20V,4A,SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Source Voltage Vds:-20V; On Resistance
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 0.9 W
***nell
MOSFET,P CH,20V,4A,SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -4A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.031ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -550mV; Power Dissipation Pd: 900mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -4A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: -8V
*** Source Electronics
Trans MOSFET P-CH 20V 4.9A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 3.6A SOT-23
***ure Electronics
Single P-Channel 20 V 0.81 W 15.4 nC Silicon Surface Mount Mosfet - SOT-23
***ment14 APAC
MOSFET, P-CH, -20V, -3.6A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.6A; Source Voltage Vds:-20V; On Resistance
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 0.81 W
***nell
MOSFET, P-CH, -20V, -3.6A, SOT23; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.6A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.023ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -700mV; Power Dissipation Pd: 810mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***(Formerly Allied Electronics)
SI1424EDH-T1-GE3 N-channel MOSFET Transistor; 4 A; 20 V; 6-Pin SOT-363
***ical
Trans MOSFET N-CH 20V 4A 6-Pin SC-70 T/R
*** Electronics
VISHAY - SI1424EDH-T1-GE3 - MOSFET, N CH, W/D,20V, 4A, SOT363
***ca Corp
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***S
French Electronic Distributor since 1988
***nell
MOSFET, N CH, W/D, 20V, 4A, SOT363; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:2.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-363; No. of Pins:6; MSL:-; Operating Temperature Range:-55°C to +150°C
***Yang
Trans MOSFET N-CH 20V 3.6A 3-Pin SOT-323 T/R - Product that comes on tape, but is not reeled
***emi
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***ure Electronics
NTR Series 20 V 24 mOhm 0.47 W Surface Mount N-Channel Power Mosfet - SOT-23
***ment14 APAC
MOSFET, N-CH, 20V, 3.6A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Source Voltage Vds:20V; On Resistance
*** Stop Electro
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***ark
MOSFET, N-CH, 20V, 3.6A, 150DEG C, 0.47W; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 20V, 3.6A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 470mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3.6 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 55 / Gate-Source Voltage V = 8 / Fall Time us = 4.67 / Rise Time ns = 14 / Turn-OFF Delay Time ns = 420 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 470
***AS INS
The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.
NexFET P-Channel Power MOSFETs
OMO Electronic NexFET P-Channel Power MOSFETs are designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. These NexFET MOSFETs feature ultra low on-resistance and ultra-low Qg and Qgd as well as a small footprint of 1.0mm x 1.5mm.
TI P-Channel MOSFETs - 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
型號 描述 庫存 價格
CSD25211W1015
DISTI # 296-36578-1-ND		MOSFET P-CH 20V 3.2A 6DSBGA
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8375In Stock
  • 1000:$0.2311
  • 500:$0.2991
  • 100:$0.4079
  • 10:$0.5440
  • 1:$0.6500
CSD25211W1015
DISTI # 296-36578-6-ND		MOSFET P-CH 20V 3.2A 6DSBGA
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8375In Stock
  • 1000:$0.2311
  • 500:$0.2991
  • 100:$0.4079
  • 10:$0.5440
  • 1:$0.6500
CSD25211W1015
DISTI # 296-36578-2-ND		MOSFET P-CH 20V 3.2A 6DSBGA
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 15000:$0.1782
  • 6000:$0.1914
  • 3000:$0.2046
CSD25211W1015
DISTI # CSD25211W1015		Trans MOSFET N-CH 20V 3.2A 6-Pin DSBGA T/R (Alt: CSD25211W1015)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    CSD25211W1015
    DISTI # CSD25211W1015    		Trans MOSFET N-CH 20V 3.2A 6-Pin DSBGA T/R - Tape and Reel (Alt: CSD25211W1015)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.1739
    • 6000:$0.1649
    • 12000:$0.1599
    • 18000:$0.1539
    • 30000:$0.1499
    CSD25211W1015P-Channel NexFET&#153,Power MOSFET5730
    • 1000:$0.1400
    • 750:$0.1500
    • 500:$0.1900
    • 250:$0.2300
    • 100:$0.2500
    • 25:$0.3000
    • 10:$0.3200
    • 1:$0.3600
    CSD25211W1015
    DISTI # 595-CSD25211W1015    		MOSFET PCh NexFET Power MOSFET
    RoHS: Compliant    		786
    • 1:$0.5200
    • 10:$0.4300
    • 100:$0.2640
    • 1000:$0.2040
    • 3000:$0.1740
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    		 WiFi Modules (802.11) SMD Module, ESP8266EX, 16Mbits SPI flash, UART Mode
    CC0402KRX7R9BB473

    Mfr.#: CC0402KRX7R9BB473

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    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 47000pF 50V 10% 0402 Case Size
    ASAK1-32.768KHZ-LRS-T

    Mfr.#: ASAK1-32.768KHZ-LRS-T

    OMO.#: OMO-ASAK1-32-768KHZ-LRS-T-ABRACON

    		 LLATOR, 32.768KHZ, SMD, LVCMOS
    可用性
    庫存:
    Available
    訂購:
    1986
    輸入數量:
    CSD25211W1015的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$0.52
    US$0.52
    10
    US$0.43
    US$4.30
    100
    US$0.26
    US$26.40
    1000
    US$0.20
    US$204.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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