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IPB009N03L G

IPB009N03L G
Mfr. #:
IPB009N03L G
製造商:
Infineon Technologies
描述:
Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: IPB009N03L G)
生命週期:
製造商新產品
數據表:
IPB009N03L G 數據表
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更多信息:
IPB009N03L G 更多信息
產品屬性
屬性值
製造商
英飛凌
產品分類
FET - 單
系列
OptiMOS 3
打包
捲軸
部分別名
IPB009N03LGATMA1 IPB009N03LGXT SP000394657
單位重量
0.056438 oz
安裝方式
貼片/貼片
商品名
優化MOS
包裝盒
TO-263-7
技術
矽
通道數
1 Channel
配置
單昆特源
晶體管型
1 N-Channel
鈀功耗
250 W
最高工作溫度
+ 175 C
最低工作溫度
- 55 C
秋季時間
22 ns
上升時間
14 ns
VGS-柵極-源極-電壓
20 V
Id 連續漏極電流
180 A
Vds-漏-源-擊穿電壓
30 V
Rds-On-Drain-Source-Resistance
700 mOhms
晶體管極性
N通道
典型關斷延遲時間
103 ns
典型開啟延遲時間
26 ns
通道模式
增強
Tags
IPB009N03LG, IPB00, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
型號 製造商 描述 庫存 價格
IPB009N03LGATMA1
DISTI # V72:2272_06377968		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		1353
  • 1000:$1.7480
  • 500:$2.1340
  • 250:$2.2700
  • 100:$2.4310
  • 25:$2.5250
  • 10:$2.8060
  • 1:$3.6278
IPB009N03LGATMA1
DISTI # V36:1790_06377968		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$1.4610
  • 500000:$1.4630
  • 100000:$1.5960
  • 10000:$1.8090
  • 1000:$1.8440
IPB009N03LGATMA1
DISTI # IPB009N03LGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1384In Stock
  • 500:$2.2522
  • 100:$2.6457
  • 10:$3.2290
  • 1:$3.6000
IPB009N03LGATMA1
DISTI # IPB009N03LGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1384In Stock
  • 500:$2.2522
  • 100:$2.6457
  • 10:$3.2290
  • 1:$3.6000
IPB009N03LGATMA1
DISTI # IPB009N03LGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.6861
  • 2000:$1.7519
  • 1000:$1.8441
IPB009N03LGATMA1
DISTI # 26194931		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		1353
  • 4:$3.6278
IPB009N03LGXT
DISTI # IPB009N03LGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB009N03LGATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 1000
  • 10000:$1.5940
  • 6000:$1.6229
  • 4000:$1.6794
  • 2000:$1.7424
  • 1000:$1.8076
IPB009N03L G
DISTI # IPB009N03L G		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: IPB009N03L G)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Asia - 0
  • 50000:$1.5880
  • 25000:$1.6083
  • 10000:$1.6292
  • 5000:$1.6507
  • 3000:$1.6953
  • 2000:$1.7424
  • 1000:$1.7921
IPB009N03LGATMA1
DISTI # SP000394657		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: SP000394657)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 10000:€1.2900
  • 6000:€1.3900
  • 4000:€1.4900
  • 2000:€1.5900
  • 1000:€1.8900
IPB009N03LGATMA1.
DISTI # 15AC3078		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:30V,On Resistance Rds(on):700µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power Dissipation Pd:250W,No. of Pins:7Pins RoHS Compliant: Yes0
  • 10000:$1.6000
  • 6000:$1.6300
  • 4000:$1.6800
  • 2000:$1.7500
  • 1:$1.8100
IPB009N03L G
DISTI # 726-IPB009N03LG		Infineon Technologies AGMOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
RoHS: Compliant		466
  • 1:$3.3200
  • 10:$2.8200
  • 100:$2.4400
  • 250:$2.3200
  • 500:$2.0800
  • 1000:$1.7500
  • 2000:$1.6600
  • 5000:$1.6000
IPB009N03LGATMA1
DISTI # 726-IPB009N03LGATMA1		Infineon Technologies AGMOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
RoHS: Compliant		900
  • 1:$3.3200
  • 10:$2.8200
  • 100:$2.4400
  • 250:$2.3200
  • 500:$2.0800
  • 1000:$1.7500
  • 2000:$1.6600
  • 5000:$1.6000
IPB009N03LGATMA1
DISTI # 7545406P		Infineon Technologies AGMOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL895
  • 500:£1.5200
  • 250:£1.6900
  • 50:£1.8700
  • 10:£2.0500
IPB009N03LGInfineon Technologies AG 98
  • 3:$2.4600
  • 10:$1.8450
  • 29:$1.5375
IPB009N03LGInfineon Technologies AG180 A, 30 V, 0.0013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AA89
  • 39:$1.5000
  • 11:$2.0000
  • 1:$3.0000
IPB009N03LGInfineon Technologies AG180 A, 30 V, 0.0013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AA78
  • 38:$1.2300
  • 11:$2.0500
  • 1:$3.2800
IPB009N03L G
DISTI # TMOSP8652		Infineon Technologies AGN-CH30V 180A1mOhm TO263-3
RoHS: Compliant		Stock DE - 50Stock HK - 0Stock US - 0
  • 1000:$2.2600
  • 2000:$1.7400
IPB009N03LGATMA1
DISTI # 1775514		Infineon Technologies AGMOSFET, N CH, 180A, 30V, PG-TO263-71885
  • 500:£1.5300
  • 250:£1.7000
  • 100:£1.7900
  • 10:£2.0600
  • 1:£2.8800
IPB009N03LGATMA1
DISTI # 1775514		Infineon Technologies AGMOSFET, N CH, 180A, 30V, PG-TO263-7
RoHS: Compliant		500
  • 2000:$2.5000
  • 1000:$2.6400
  • 500:$3.1300
  • 250:$3.5000
  • 100:$3.6800
  • 10:$4.2500
  • 1:$5.0000
圖片 型號 描述
IPB009N03LGATMA1

Mfr.#: IPB009N03LGATMA1

OMO.#: OMO-IPB009N03LGATMA1

 MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
IPB009N03L G

Mfr.#: IPB009N03L G

OMO.#: OMO-IPB009N03L-G

 MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
IPB009N03LGATMA1

Mfr.#: IPB009N03LGATMA1

OMO.#: OMO-IPB009N03LGATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 180A TO263-7
IPB009N03L

Mfr.#: IPB009N03L

OMO.#: OMO-IPB009N03L-1190

 全新原裝
IPB009N03L G

Mfr.#: IPB009N03L G

OMO.#: OMO-IPB009N03L-G-1190

 Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: IPB009N03L G)
IPB009N03LG

Mfr.#: IPB009N03LG

OMO.#: OMO-IPB009N03LG-1190

 MOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL
可用性
庫存:
Available
訂購:
2500
輸入數量:
IPB009N03L G的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$2.40
US$2.40
10
US$2.28
US$22.80
100
US$2.16
US$216.00
500
US$2.04
US$1 020.00
1000
US$1.92
US$1 920.00
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