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IRFB3607PBF

IRFB3607PBF
Mfr. #:
IRFB3607PBF
製造商:
Infineon / IR
描述:
MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg
生命週期:
製造商新產品
數據表:
IRFB3607PBF 數據表
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HTML Datasheet:
IRFB3607PBF DatasheetIRFB3607PBF Datasheet (P4-P6)IRFB3607PBF Datasheet (P7-P9)IRFB3607PBF Datasheet (P10-P11)
ECAD Model:
更多信息:
IRFB3607PBF 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
75 V
Id - 連續漏極電流：
80 A
Rds On - 漏源電阻：
7.34 mOhms
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
56 nC
Pd - 功耗：
140 W
配置：
單身的
打包：
管子
高度：
15.65 mm
長度：
10 mm
晶體管類型：
1 N-Channel
寬度：
4.4 mm
品牌：
英飛凌/紅外
產品類別：
MOSFET
出廠包裝數量：
1000
子類別：
MOSFET
第 # 部分別名：
SP001551746
單位重量：
0.211644 oz
Tags
IRFB3607P, IRFB36, IRFB3, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    I***o
    I***o
    RU

    Long delivery. otherwise everything corresponds. i recommend to buy.

    2019-05-12
    G***s
    G***s
    FR

    parfait

    2019-07-16
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.34 Milliohms;ID 80A;TO-220AB;PD 140W;-55de
***ure Electronics
Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - TO-220-3
***klin Elektronik
INFINEON THT MOSFET NFET 75V 80A 9mΩ 175°C TO-220 IRFB3607PBF
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 140 W
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
***ment14 APAC
MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.34mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220AB; Power Dissipation Pd:140W; Pulse Current Idm:310A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 6.8Milliohms;ID 84A;TO-220AB;PD 140W;-55deg
*** Source Electronics
Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 60V 75A TO-220AB
***ure Electronics
Single N-Channel 60 V 8.5 mOhm 86 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***roFlash
Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ment14 APAC
MOSFET, N, 60V, 84A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:60V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:1.11°C/W; On State resistance @ Vgs = 10V:8.5ohm; Package / Case:TO-220AB; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:340A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.9Milliohms;ID 110A;TO-220AB;PD 170W;-55de
***ure Electronics
Single N-Channel 55 V 6.5 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 170 W
***roFlash
Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ment14 APAC
MOSFET, N, 55V, 110A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:55V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:6.5mohm; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:440A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.1Milliohms;ID 79A;TO-220AB;PD 110W;-55deg
***ure Electronics
Single N-Channel 60 V 8.4 mOhm 46 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 60V 79A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 110 W
*** Stop Electro
Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:79A; Package / Case:TO-220; Power Dissipation Pd:110W; Pulse Current Idm:315A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***emi
N-Channel UltraFET Power MOSFET 55V, 60A, 19mΩ
***Yang
Trans MOSFET N-CH 55V 60A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***ponent Stockers USA
52 A 55 V 0.019 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***r Electronics
Power Field-Effect Transistor, 60A I(D), 55V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:60A; On Resistance, Rds(on):0.016ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75332.
***i-Key
MOSFET N-CH 60V 75A TO-220AB
***ser
MOSFETs 71a, 60V, 0.014 Ohm Logic Level N-Ch
***el Nordic
Contact for details
***i-Key
MOSFET N-CH 60V 59A TO-220AB
***ser
MOSFETs 55a, 60V, 0.019Ohm Logic Level N-Ch
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
型號 製造商 描述 庫存 價格
IRFB3607PBF
DISTI # V99:2348_13889689		Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		1902
  • 10000:$0.2440
  • 2000:$0.2665
  • 1000:$0.3703
  • 100:$0.4516
  • 10:$0.7060
  • 1:$0.7543
IRFB3607PBF
DISTI # IRFB3607PBF-ND		Infineon Technologies AGMOSFET N-CH 75V 80A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		3873In Stock
  • 1000:$0.4826
  • 500:$0.5915
  • 100:$0.7821
  • 10:$1.0000
  • 1:$1.1400
IRFB3607PBF
DISTI # 30701834		Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		9800
  • 1750:$0.2688
  • 400:$0.2928
  • 40:$0.3168
IRFB3607PBF
DISTI # 29554025		Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		1902
  • 1000:$0.3703
  • 100:$0.4516
  • 23:$0.7060
IRFB3607PBF
DISTI # 30608017		Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		700
  • 200:$0.6044
  • 100:$0.6464
  • 50:$0.7306
  • 24:$1.0072
IRFB3607PBF
DISTI # IRFB3607PBF		Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB3607PBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 800
  • 1:$0.3519
  • 10:$0.3469
  • 25:$0.3429
  • 50:$0.3379
  • 100:$0.3259
  • 500:$0.3149
  • 1000:$0.3089
IRFB3607PBF
DISTI # IRFB3607PBF		Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB (Alt: IRFB3607PBF)
RoHS: Compliant
Min Qty: 1000		Asia - 3000
  • 1000:$0.2790
  • 2000:$0.2675
  • 3000:$0.2639
  • 5000:$0.2536
  • 10000:$0.2504
  • 25000:$0.2441
  • 50000:$0.2382
IRFB3607PBF
DISTI # SP001551746		Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB (Alt: SP001551746)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€0.5019
  • 10:€0.4819
  • 25:€0.4809
  • 50:€0.4789
  • 100:€0.3649
  • 500:€0.3639
  • 1000:€0.3169
IRFB3607PBF
DISTI # 11N7901		Infineon Technologies AGMOSFET, N, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:75V,On Resistance Rds(on):0.00734ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:140W,RoHS Compliant: Yes1193
  • 1:$0.9300
  • 10:$0.7680
  • 100:$0.5840
  • 500:$0.5770
  • 1000:$0.5700
  • 5000:$0.5630
  • 10000:$0.5560
IRFB3607PBF.
DISTI # 27AC6764		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:75V,On Resistance Rds(on):0.00734ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:140W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 1:$0.9300
  • 10:$0.7680
  • 100:$0.5840
  • 500:$0.5770
  • 1000:$0.5700
  • 5000:$0.5630
  • 10000:$0.5560
IRFB3607PBF
DISTI # 70017890		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 75V,RDS(ON) 7.34 Milliohms,ID 80A,TO-220AB,PD 140W,-55de
RoHS: Compliant		0
  • 1200:$2.0100
IRFB3607PBF
DISTI # 942-IRFB3607PBF		Infineon Technologies AGMOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg
RoHS: Compliant		4063
  • 1:$0.9300
  • 10:$0.7680
  • 100:$0.4950
  • 1000:$0.3960
  • 2000:$0.3350
  • 10000:$0.3220
  • 25000:$0.3100
IRFB3607PBFInfineon Technologies AGSingle N-Channel 75 V 9 mOhm 84 nC HEXFET Power Mosfet - TO-220-3
RoHS: Compliant		4200Tube
  • 30:$0.3950
  • 300:$0.3600
  • 1750:$0.3100
IRFB3607PBF
DISTI # 6886923		Infineon Technologies AGMOSFET N-CHANNEL 75V 80A HEXFET TO220AB, PK1414
  • 5:£1.1840
  • 25:£1.0100
IRFB3607PBFInfineon Technologies AG 80
  • 46:$1.4740
  • 13:$1.6750
  • 1:$2.6800
IRFB3607PBF
DISTI # IRFB3607PBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,75V,80A,140W,TO220AB364
  • 1:$0.7300
  • 3:$0.6600
  • 10:$0.5500
  • 100:$0.4900
IRFB3607PBF
DISTI # IRFB3607PBF		Infineon Technologies AGN-Ch 75V 80A 140W 0,009R TO220AB
RoHS: Compliant		2460
  • 10:€0.5760
  • 50:€0.3360
  • 200:€0.2760
  • 500:€0.2655
IRFB3607PBF
DISTI # TMOSP12110		Infineon Technologies AGN-CH 75V 80A 9mOhm TO220-3
RoHS: Compliant		Stock DE - 800Stock US - 0
  • 50:$0.4600
  • 150:$0.4338
  • 350:$0.4075
  • 750:$0.3681
  • 1850:$0.3550
IRFB3607PBFInfineon Technologies AGINSTOCK110
    IRFB3607PBFInfineon Technologies AGINSTOCK112
      IRFB3607PBF
      DISTI # 1602227      		Infineon Technologies AGMOSFET, N, TO-220AB
      RoHS: Compliant      		1195
      • 1:$1.4700
      • 10:$1.2200
      • 100:$0.7840
      • 1000:$0.6270
      • 2000:$0.5520
      IRFB3607PBFInfineon Technologies AG75V,9m,80A,N-Channel Power MOSFET100
      • 1:$1.1000
      • 100:$0.9100
      • 500:$0.8100
      • 1000:$0.7900
      IRFB3607PBFInfineon Technologies AGRoHS (ship within 1day)100
      • 1:$1.6700
      • 10:$1.2500
      • 50:$1.0400
      • 100:$0.8300
      • 500:$0.7100
      • 1000:$0.6700
      IRFB3607PBF
      DISTI # 1602227      		Infineon Technologies AGMOSFET, N, TO-220AB
      RoHS: Compliant      		2438
      • 5:£0.6710
      • 25:£0.5840
      • 100:£0.3860
      • 250:£0.3690
      • 500:£0.3340
      IRFB3607PBF
      DISTI # C1S327400166566      		Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		490
      • 100:$0.3860
      • 50:$0.4430
      • 10:$0.5700
      • 5:$0.8550
      IRFB3607PBF
      DISTI # C1S322000488447      		Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		700
      • 100:$0.5120
      • 50:$0.5780
      • 10:$0.7970
      • 5:$0.8540
      IRFB3607PBF
      DISTI # XSLY00000000911      		INFINEON/IRTO-220AB
      RoHS: Compliant      		3960
      • 2000:$0.3600
      • 3960:$0.3360
      IRFB3607PBF
      DISTI # XSFP00000147528      		Infineon Technologies AGPowerField-EffectTransistor,80AI(D),75V,0.009ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-220AB
      RoHS: Compliant      		2827
      • 300:$0.7900
      • 2827:$0.7182
      圖片 型號 描述
      MC34072DG

      Mfr.#: MC34072DG

      OMO.#: OMO-MC34072DG

      		 Operational Amplifiers - Op Amps 3-44V Dual 5mV VIO Commercial Temp
      CD74HCT08M96

      Mfr.#: CD74HCT08M96

      OMO.#: OMO-CD74HCT08M96

      		 Logic Gates Quad 2-Input
      CRCW08051K00FKEAC

      Mfr.#: CRCW08051K00FKEAC

      OMO.#: OMO-CRCW08051K00FKEAC

      		 Thick Film Resistors - SMD 1/8Watt 1Kohms 1% Commercial Use
      MC34072DG

      Mfr.#: MC34072DG

      OMO.#: OMO-MC34072DG-ON-SEMICONDUCTOR

      		 Operational Amplifiers - Op Amps 3-44V Dual 5mV VIO Commercial Temp
      SD10H0B

      Mfr.#: SD10H0B

      OMO.#: OMO-SD10H0B-CK-COMPONENTS

      		 SWITCH SLIDE DIP SPST 100MA 25V
      CRCW08051K00FKEAC

      Mfr.#: CRCW08051K00FKEAC

      OMO.#: OMO-CRCW08051K00FKEAC-VISHAY-DALE

      		 D12/CRCW0805-C 100 1K0 1% ET1
      CRCW080510K0FKEAC

      Mfr.#: CRCW080510K0FKEAC

      OMO.#: OMO-CRCW080510K0FKEAC-VISHAY-DALE

      		 D12/CRCW0805-C 100 10K 1% ET1
      CRCW0603100RFKEAC

      Mfr.#: CRCW0603100RFKEAC

      OMO.#: OMO-CRCW0603100RFKEAC-VISHAY-DALE

      		 D11/CRCW0603-C 100 100R 1% ET1
      CD74HCT08M96

      Mfr.#: CD74HCT08M96

      OMO.#: OMO-CD74HCT08M96-TEXAS-INSTRUMENTS

      		 全新原裝
      RC0805FR-071KL

      Mfr.#: RC0805FR-071KL

      OMO.#: OMO-RC0805FR-071KL-YAGEO

      		 Thick Film Resistors - SMD 1K OHM 1%
      可用性
      庫存:
      Available
      訂購:
      1984
      輸入數量:
      IRFB3607PBF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$0.92
      US$0.92
      10
      US$0.77
      US$7.68
      100
      US$0.50
      US$49.50
      1000
      US$0.40
      US$396.00
      從...開始
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