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BFP 640FESD H6327

BFP 640FESD H6327
Mfr. #:
BFP 640FESD H6327
製造商:
Infineon Technologies
描述:
RF Bipolar Transistors RF BI
生命週期:
製造商新產品
數據表:
BFP 640FESD H6327 數據表
交貨:
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ECAD Model:
更多信息:
BFP 640FESD H6327 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
射頻雙極晶體管
RoHS：
Y
系列：
BFP640
晶體管類型：
雙極
技術：
矽鍺
發射極基極電壓 VEBO：
4.8 V
連續集電極電流：
50 mA
安裝方式：
貼片/貼片
包裝/案例：
TSFP-4-1
打包：
捲軸
類型：
射頻矽鍺
品牌：
英飛凌科技
Pd - 功耗：
200 mW
產品類別：
射頻雙極晶體管
出廠包裝數量：
3000
子類別：
晶體管
第 # 部分別名：
BFP640FESDH6327XTSA1 BFP64FESDH6327XT SP000890034
單位重量：
0.000282 oz
Tags
BFP640FESDH, BFP640FES, BFP640FE, BFP640F, BFP64, BFP6, BFP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
RF Transistors
Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14 GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29 dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.
BFPx4 RF Transistors
Infineon's BFPx4 RF Transistors provide the designer the best possible performance, superior flexibility and price/performance ratio. These are widely used for new emerging wireless applications, where the system specification is not yet firmly established. The BFxx Low Noise Amplifiers (LNAs) include devices suitable for use from AM over VHF/UHF up to 14GHz. These are the latest LNA innovations based on Infineon’s reliable high volume 80GHz fT silicon germanium carbon (SiGe:C) heterojunction bipolar technology. They combine uncompromised RF performance with outstanding robustness against high RF input power overdrive and Electrostatic Discharge (ESD). The BGS12SL6 RF MOS Switch is a general purpose 0.1 - 6.0GHz SPDT switch suitable for band/mode switching in cellular systems and WLAN applications. The ESD112B1 TVS ESD/Transient Protection Diode is a bi-directional, ultra-low capacitance ESD/Transient protection diode designed for the protection of RF signal lines.Learn More
型號 製造商 描述 庫存 價格
BFP640FESDH6327XTSA1
DISTI # 32628507		Infineon Technologies AGTrans RF BJT NPN 4.1V 0.05A Automotive 4-Pin TSFP T/R
RoHS: Compliant		210000
  • 3000:$0.2142
BFP640FESDH6327XTSA1
DISTI # 32628715		Infineon Technologies AGTrans RF BJT NPN 4.1V 0.05A Automotive 4-Pin TSFP T/R
RoHS: Compliant		42000
  • 3000:$0.2142
BFP640FESDH6327XTSA1
DISTI # BFP640FESDH6327XTSA1TR-ND		Infineon Technologies AGRF TRANS NPN 4.7V 46GHZ 4TSFP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.1973
BFP640FESDH6327XTSA1
DISTI # V36:1790_06384747		Infineon Technologies AGTrans RF BJT NPN 4.1V 0.05A Automotive 4-Pin TSFP T/R
RoHS: Compliant		0
    BFP640FESDH6327XTSA1
    DISTI # BFP640FESDH6327XTSA1    		Infineon Technologies AGTrans GP BJT NPN 4.1V 0.05A 4-Pin TSFP T/R - Bulk (Alt: BFP640FESDH6327XTSA1)
    RoHS: Compliant
    Min Qty: 1924
    Container: Bulk    		Americas - 0
    • 19240:$0.1649
    • 9620:$0.1679
    • 5772:$0.1739
    • 3848:$0.1799
    • 1924:$0.1869
    BFP640FESDH6327XTSA1
    DISTI # BFP640FESDH6327XTSA1    		Infineon Technologies AGTrans GP BJT NPN 4.1V 0.05A 4-Pin TSFP T/R - Tape and Reel (Alt: BFP640FESDH6327XTSA1)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.1609
    • 18000:$0.1639
    • 12000:$0.1699
    • 6000:$0.1759
    • 3000:$0.1829
    BFP640FESDH6327XTSA1
    DISTI # SP000890034    		Infineon Technologies AGTrans GP BJT NPN 4.1V 0.05A 4-Pin TSFP T/R (Alt: SP000890034)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.1679
    • 18000:€0.1809
    • 12000:€0.1959
    • 6000:€0.2139
    • 3000:€0.2619
    BFP 640FESD H6327
    DISTI # 726-BFP640FESDH6327    		Infineon Technologies AGRF Bipolar Transistors RF BI
    RoHS: Compliant    		4378
    • 1:$0.5600
    • 10:$0.4600
    • 100:$0.2810
    • 1000:$0.2170
    • 3000:$0.1850
    BFP640FESDH6327XTSA1Infineon Technologies AGInfineon Ultra Low-Noise SiGe:C TransistorBFP640FESD
    RoHS: Not Compliant    		3000
    • 1000:$0.1700
    • 500:$0.1800
    • 100:$0.1900
    • 25:$0.2000
    • 1:$0.2100
    BFP640FESDH6327Infineon Technologies AG 2291
      BFP640FESDH6327XTSA1
      DISTI # 2480672      		Infineon Technologies AGRF TRANSISTOR, NPN, 4.1V, 46GHZ, TSFP
      RoHS: Compliant      		45
      • 3000:$0.2850
      • 1000:$0.3340
      • 100:$0.4320
      • 10:$0.7070
      • 1:$0.8610
      BFP640FESDH6327Infineon Technologies AG4.1V,50mA,Bipolar RF NPN Transistor2350
      • 1:$0.3000
      • 100:$0.2500
      • 500:$0.2200
      • 1000:$0.2200
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      可用性
      庫存:
      Available
      訂購:
      1987
      輸入數量:
      BFP 640FESD H6327的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$0.56
      US$0.56
      10
      US$0.46
      US$4.60
      100
      US$0.28
      US$28.10
      1000
      US$0.22
      US$217.00
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