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FQD2N90TM

FQD2N90TM
Mfr. #:
FQD2N90TM
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 900V N-Channel QFET
生命週期:
製造商新產品
數據表:
FQD2N90TM 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-252-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
900 V
Id - 連續漏極電流：
1.7 A
Rds On - 漏源電阻：
7.2 Ohms
Vgs - 柵源電壓：
30 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
2.5 W
配置：
單身的
頻道模式：
增強
打包：
捲軸
高度：
2.39 mm
長度：
6.73 mm
系列：
FQD2N90
晶體管類型：
1 N-Channel
類型：
MOSFET
寬度：
6.22 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
1.7 S
秋季時間：
30 ns
產品類別：
MOSFET
上升時間：
35 ns
出廠包裝數量：
2500
子類別：
MOSFET
典型關斷延遲時間：
20 ns
典型的開啟延遲時間：
15 ns
單位重量：
0.026103 oz
Tags
FQD2N90TM, FQD2N90T, FQD2N9, FQD2N, FQD2, FQD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 900 V, 1.7 A, 7.2 Ω, DPAK
***ark
TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,1.7A I(D),TO-252AA
***nell
MOSFET, N-CH, 900V, 1.7A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 5.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Powe
*** Stop Electro
Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel QFET® MOSFET 800V, 1.8A, 6.3Ω
***ure Electronics
N-Channel 800 V 6.3 Ohm Surface Mount Mosfet - TO-252-3
***r Electronics
Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***icroelectronics
N-CHANNEL 900V - 5.5 Ohm - 2.1A - TO-220 ZENER-PROTECTED SUPERMESH MOSFET
***ure Electronics
N-Channel 900 V 6.5 Ohm SMT Zener-Protect SuperMESH MosFet TO-252-3
*** Source Electronics
Trans MOSFET N-CH 900V 2.1A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 900V 2.1A DPAK
***va Crawler
N-channel 900 V, 5 Ohm typ., 2.1 A SuperMESH Power MOSFET in DPAK package
***ark
MOSFET, N-CH, 900V, 2.1A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:2.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
***SIT Distribution GmbH
Power Field-Effect Transistor, 2.1A I(D), 900V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***enic
900V 2.1A 5´Î@10V1.05A 70W 3.75V@50uA 10pF@25V N Channel 485pF@25V 19.5nC@0~10V -55¡Í~+150¡Í@(Tj) TO-252-3(DPAK) MOSFETs ROHS
***emi
N-Channel Power MOSFET, QFET®, 1000 V, 1.6 A, 9 Ω, DPAK
*** Source Electronics
MOSFET N-CH 1000V 1.6A DPAK / Trans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) DPAK T/R
*** Stop Electro
Power Field-Effect Transistor, 1.6A I(D), 1000V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, 800 V, 1.0 A, 20 Ω, DPAK
***ure Electronics
N-Channel 800 V 20 Ohm Surface Mount Mosfet - TO-252-3
*** Stop Electro
Power Field-Effect Transistor, 1A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..
***icroelectronics
N-channel 900 V, 4.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) Power MOSFET in DPAK package
***ure Electronics
N-Channel 900 V 4.8 Ohm Surface Mount SuperMesh Power MosFet - TO-252-3
*** Source Electronics
MOSFET N-CH 900V 3A DPAK / Trans MOSFET N-CH 900V 3A 3-Pin(2+Tab) DPAK T/R
***ark
MOSFET, N CHANNEL, 900V, 3A, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
***SIT Distribution GmbH
Power Field-Effect Transistor, 3A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N CH, 900V, 3A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 4.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 90W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 3A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 900V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
***icroelectronics
N-CHANNEL 800V - 3 OHM - 3A DPAK Zener-Protected SuperMESH(TM) Power MOSFET
***ure Electronics
N-Channel 800 V 3.5 O 80 W Surface Mount SuperMESH™ Power MosFet - TO-252
***ark
MOSFET, N CHANNEL, 800V, 3A, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:1.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
***SIT Distribution GmbH
Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N CH, 800V, 3A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 80W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 3A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 800V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
型號 製造商 描述 庫存 價格
FQD2N90TM
DISTI # V72:2272_06301251		ON SemiconductorQF 900V 7.2OHM DPAK373
  • 250:$0.7060
  • 100:$0.7136
  • 25:$0.9036
  • 10:$0.9132
  • 1:$1.0671
FQD2N90TM
DISTI # FQD2N90TMCT-ND		ON SemiconductorMOSFET N-CH 900V 1.7A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4990In Stock
  • 1000:$0.5986
  • 500:$0.7582
  • 100:$0.9777
  • 10:$1.2370
  • 1:$1.4000
FQD2N90TM
DISTI # FQD2N90TMDKR-ND		ON SemiconductorMOSFET N-CH 900V 1.7A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4990In Stock
  • 1000:$0.5986
  • 500:$0.7582
  • 100:$0.9777
  • 10:$1.2370
  • 1:$1.4000
FQD2N90TM
DISTI # FQD2N90TMTR-ND		ON SemiconductorMOSFET N-CH 900V 1.7A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.5424
FQD2N90TM
DISTI # 25743580		ON SemiconductorQF 900V 7.2OHM DPAK373
  • 250:$0.7060
  • 100:$0.7136
  • 25:$0.9036
  • 17:$0.9132
FQD2N90TM
DISTI # FQD2N90TM		ON SemiconductorTrans MOSFET N-CH 900V 1.7A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD2N90TM)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.3999
  • 5000:$0.3969
  • 10000:$0.3919
  • 15000:$0.3869
  • 25000:$0.3779
FQD2N90TM
DISTI # FQD2N90TM		ON SemiconductorTrans MOSFET N-CH 900V 1.7A 3-Pin(2+Tab) DPAK T/R (Alt: FQD2N90TM)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.5909
  • 5000:€0.4839
  • 10000:€0.4429
  • 15000:€0.4089
  • 25000:€0.3799
FQD2N90TM
DISTI # FQD2N90TM		ON SemiconductorTrans MOSFET N-CH 900V 1.7A 3-Pin(2+Tab) DPAK T/R (Alt: FQD2N90TM)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    FQD2N90TM
    DISTI # 82C4037    		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,1.7A I(D),TO-252AA ROHS COMPLIANT: YES0
    • 1:$0.4980
    • 2500:$0.4940
    • 10000:$0.4770
    • 25000:$0.4630
    FQD2N90TM
    DISTI # 512-FQD2N90TM    		ON SemiconductorMOSFET 900V N-Channel QFET
    RoHS: Compliant    		31
    • 1:$1.1600
    • 10:$0.9870
    • 100:$0.7580
    • 500:$0.6700
    • 1000:$0.5290
    • 2500:$0.4690
    • 10000:$0.4510
    FQD2N90TMON Semiconductor 
    RoHS: Not Compliant    		2394
    • 1000:$0.6700
    • 500:$0.7100
    • 100:$0.7400
    • 25:$0.7700
    • 1:$0.8300
    FQD2N90TM
    DISTI # C1S541901403014    		ON SemiconductorMOSFETs
    RoHS: Not Compliant    		373
    • 250:$0.7060
    • 100:$0.7136
    • 25:$0.9036
    • 10:$0.9132
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    可用性
    庫存:
    Available
    訂購:
    1992
    輸入數量:
    FQD2N90TM的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$1.10
    US$1.10
    10
    US$0.94
    US$9.39
    100
    US$0.72
    US$72.10
    500
    US$0.64
    US$318.50
    1000
    US$0.50
    US$503.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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