CSD17551Q3A

Mfr. #:: CSD17551Q3A
描述:: MOSFET N-CH 30V 12A 8VSON
生命週期:: 製造商新產品
數據表:: CSD17551Q3A 數據表
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更多信息:: CSD17551Q3A 更多信息 CSD17551Q3A Product Details

產品屬性
屬性值

製造商: 德州儀器

產品分類: FET - 單

系列: 場效應管

打包: Digi-ReelR 替代包裝

安裝方式: 貼片/貼片

商品名: 場效應管

包裝盒: 8-PowerVDFN

技術: 矽

工作溫度: -55°C ~ 150°C (TJ)

安裝型: 表面貼裝

通道數: 1 Channel

供應商-設備-包: 8-SON (3.3x3.3)

配置: 單身的

FET型: MOSFET N 溝道，金屬氧化物

最大功率: 2.6W

晶體管型: 1 N-Channel

漏源電壓 Vdss: 30V

輸入電容-Ciss-Vds: 1370pF @ 15V

FET-Feature: 標準

Current-Continuous-Drain-Id-25°C: 12A (Tc)

Rds-On-Max-Id-Vgs: 9 mOhm @ 11A, 10V

Vgs-th-Max-Id: 2.1V @ 250μA

柵極電荷-Qg-Vgs: 7.8nC @ 4.5V

鈀功耗: 2.6 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 3.4 ns

上升時間: 24 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 48 A

Vds-漏-源-擊穿電壓: 30 V

VGS-th-Gate-Source-Threshold-Voltage: 1.6 V

Rds-On-Drain-Source-Resistance: 11.8 mOhms

晶體管極性: N通道

典型關斷延遲時間: 12 ns

典型開啟延遲時間: 8 ns

Qg-門電荷: 6 nC

正向跨導最小值: 101 S

Tags: CSD17551, CSD1755, CSD175, CSD17, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD17551Q3A 更多信息

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

型號	描述	庫存	價格
CSD17551Q3A DISTI # 296-35025-1-ND	MOSFET N-CH 30V 12A 8VSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5645In Stock	1000:$0.4224 500:$0.5280 100:$0.7128 10:$0.9240 1:$1.0600
CSD17551Q3A DISTI # 296-35025-6-ND	MOSFET N-CH 30V 12A 8VSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5645In Stock	1000:$0.4224 500:$0.5280 100:$0.7128 10:$0.9240 1:$1.0600
CSD17551Q3A DISTI # 296-35025-2-ND	MOSFET N-CH 30V 12A 8VSON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	5000In Stock	12500:$0.3332 5000:$0.3460 2500:$0.3716
CSD17551Q3A DISTI # CSD17551Q3A	Trans MOSFET N-CH 30V 12A 8-Pin VSON EP T/R - Tape and Reel (Alt: CSD17551Q3A) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3379 5000:$0.3209 10000:$0.3109 15000:$0.2999 25000:$0.2919
CSD17551Q3A DISTI # CSD17551Q3A	Trans MOSFET N-CH 30V 12A 8-Pin VSON EP T/R (Alt: CSD17551Q3A) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
CSD17551Q3A DISTI # CSD17551Q3A	Trans MOSFET N-CH 30V 12A 8-Pin VSON EP T/R (Alt: CSD17551Q3A) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.4709 5000:€0.3849 10000:€0.3529 15000:€0.3019 25000:€0.2819
CSD17551Q3A	30V N-Channel MOSFET	5000	1000:$0.2700 750:$0.3000 500:$0.3700 250:$0.4500 100:$0.4900 25:$0.5800 10:$0.6200 1:$0.7000
CSD17551Q3A DISTI # 595-CSD17551Q3A	MOSFET 30V N-Chnl MOSFET RoHS: Compliant	268	1:$0.8700 10:$0.7200 100:$0.4660 1000:$0.3730 2500:$0.3380 5000:$0.3150 10000:$0.3030
CSD17551Q3A	Power Field-Effect Transistor, 12A I(D), 30V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET RoHS: Compliant	141999	1000:$0.2500 500:$0.2600 100:$0.2700 25:$0.2900 1:$0.3100

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