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ISO5851DWR

ISO5851DWR
Mfr. #:
ISO5851DWR
描述:
Gate Drivers Iso Gate Driver
生命週期:
製造商新產品
數據表:
ISO5851DWR 數據表
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ECAD Model:
更多信息:
ISO5851DWR 更多信息 ISO5851DWR Product Details
產品屬性
屬性值
製造商：
德州儀器
產品分類：
柵極驅動器
RoHS：
Y
產品：
隔離式柵極驅動器
類型：
反相、非反相
安裝方式：
貼片/貼片
包裝/案例：
SOIC-16
司機人數：
1 Driver
輸出數量：
1 Output
輸出電流：
2.5 A
配置：
單身的
上升時間：
20 ns
秋季時間：
20 ns
電源電壓 - 最小值：
3 V
電源電壓 - 最大值：
5.5 V
傳播延遲 - 最大值：
110 ns
Pd - 功耗：
600 mW
最低工作溫度：
- 40 C
最高工作溫度：
+ 125 C
系列：
ISO5851
打包：
捲軸
特徵：
DESAT 保護、米勒箝位、電源良好、故障輸出、復位
高度：
2.65 mm
隔離電壓：
8 kV
長度：
10.5 mm
工作溫度範圍：
- 40 C to + 125 C
輸出電壓：
15 V to 30 V
技術：
矽
寬度：
7.6 mm
品牌：
德州儀器
濕氣敏感：
是的
工作電源電壓：
3 V, 5.5 V
產品類別：
柵極驅動器
出廠包裝數量：
2000
子類別：
PMIC - 電源管理 IC
單位重量：
0.023492 oz
Tags
ISO5851, ISO58, ISO5, ISO
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**y
    E**y
    RU

    Capacitor works.

    2019-09-21
    E**x
    E**x
    CA

    Love these efficient controllers

    2019-07-02
***et Europe
MOSFET DRVR 2.5A 1-OUT Hi/Low Side Inv/Non-Inv 16-Pin SOIC T/R
***as Instruments
High-CMTI 2.5-A / 5-A reinforced isolated IGBT, MOSFET gate driver with active protection feature 16-SOIC -40 to 125
***ical
Driver 5A 1-OUT High Side Inv/Non-Inv 16-Pin SOIC T/R
***i-Key
DGTL ISO 5.7KV GATE DRVR 16SOIC
***ark
Iso Gate Driver
***AS INSRUMENTS
The ISO5851-Q1 is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage.
***AS INSTRUMENTS INCORPORATED
An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect, the gate driver output is driven low to VEE2 potential, turning the IGBT immediately off.
***AS INST
When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.
***AS INSTR
When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to VEE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path preventing IGBT to be dynamically turned on during high voltage transient conditions.
***AS INSRUMENT
When desaturation is active, a fault signal is sent across the isolation barrier pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.
***AS INSRUMENTS
When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to VEE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path preventing IGBT to be dynamically turned on during high voltage transient conditions.
***AS INSTRUM
The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low; otherwise, this output is high.
***NS
The ISO5851-Q1 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.
ISO5851/ISO5851-Q1 IGBT/MOSFET Gate Driver
OMO Electronic ISO5851/ISO5851-Q1 Isolated IGBT/MOSFET Gate Driver is a 5.7kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5A source and 5A sink current. The input side operates from a single 3V to 5.5V supply. The output side allows for a supply range from minimum 15V to maximum 30V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76ns assures accurate control of the output stage. Typical applications include industrial motor control drives, industrial power supplies, solar inverters, HEV and EV power modules, and induction heating. The ISO5851-Q1 devices are AEC-Q100 qualified for automotive applications.
型號 描述 庫存 價格
ISO5851DWR
DISTI # 26643347		Driver 5A 1-OUT Hi Side Inv/Non-Inv 16-Pin SOIC T/R
RoHS: Compliant		4000
  • 2000:$2.5619
ISO5851DWR
DISTI # 296-42340-1-ND		DGTL ISO 5.7KV GATE DRVR 16SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1061In Stock
  • 1000:$2.9186
  • 500:$3.4606
  • 100:$4.0652
  • 10:$4.9620
  • 1:$5.5200
ISO5851DWR
DISTI # 296-42340-6-ND		DGTL ISO 5.7KV GATE DRVR 16SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1061In Stock
  • 1000:$2.9186
  • 500:$3.4606
  • 100:$4.0652
  • 10:$4.9620
  • 1:$5.5200
ISO5851DWR
DISTI # 296-42340-2-ND		DGTL ISO 5.7KV GATE DRVR 16SOIC
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$2.6919
ISO5851DWR
DISTI # ISO5851DWR		MOSFET DRVR 2.5A 1-OUT Hi/Low Side Inv/Non-Inv 16-Pin SOIC T/R - Tape and Reel (Alt: ISO5851DWR)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 2000:$2.8900
  • 4000:$2.6900
  • 8000:$2.6900
  • 12000:$2.5900
  • 20000:$2.4900
ISO5851DWR
DISTI # ISO5851DWR		MOSFET DRVR 2.5A 1-OUT Hi/Low Side Inv/Non-Inv 16-Pin SOIC T/R (Alt: ISO5851DWR)
RoHS: Compliant
Min Qty: 2000
Container: Tape and Reel		Europe - 0
  • 2000:€3.2900
  • 4000:€2.8900
  • 8000:€2.5900
  • 12000:€2.4900
  • 20000:€2.3900
ISO5851DWRHigh-CMTI 2.5-A / 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Active Protection Features2000
  • 1000:$2.3000
  • 750:$2.3500
  • 500:$2.7100
  • 250:$3.1200
  • 100:$3.3400
  • 25:$3.7200
  • 10:$3.9900
  • 1:$4.4300
ISO5851DWR
DISTI # 595-ISO5851DWR		Gate Drivers Reinforced Isolated IGBT Gate Driver with High CMTI & Miller Clamp 16-SOIC -40 to 125
RoHS: Compliant		2346
  • 1:$5.3600
  • 10:$4.8200
  • 100:$3.9400
  • 250:$3.7000
  • 500:$3.3600
  • 1000:$2.8300
  • 2000:$2.6900
ISO5851DW
DISTI # 595-ISO5851DW		Gate Drivers Reinforced Isolated IGBT Gate Driver with High CMTI & Miller Clamp 16-SOIC -40 to 125
RoHS: Compliant		80
  • 1:$6.4300
  • 10:$5.7800
  • 100:$4.7300
  • 250:$4.4400
  • 500:$4.0300
  • 1000:$3.4000
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APT2012LZGCK

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ISO5851EVM

Mfr.#: ISO5851EVM

OMO.#: OMO-ISO5851EVM-TEXAS-INSTRUMENTS

 EVAL BOARD FOR ISO5851
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Mfr.#: APT2012LZGCK

OMO.#: OMO-APT2012LZGCK-KINGBRIGHT

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CRCW060382K0FKEAC

Mfr.#: CRCW060382K0FKEAC

OMO.#: OMO-CRCW060382K0FKEAC-VISHAY-DALE

 D11/CRCW0603-C 100 82K 1% ET1
CRCW08050000Z0EAC

Mfr.#: CRCW08050000Z0EAC

OMO.#: OMO-CRCW08050000Z0EAC-VISHAY-DALE

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可用性
庫存:
Available
訂購:
1985
輸入數量:
ISO5851DWR的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$5.36
US$5.36
10
US$4.82
US$48.20
100
US$3.94
US$394.00
250
US$3.70
US$925.00
500
US$3.36
US$1 680.00
1000
US$2.83
US$2 830.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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