STB100N10F7

Mfr. #:: STB100N10F7
製造商:: STMicroelectronics
描述:: Darlington Transistors MOSFET N-Ch 100V 0.0068 Ohm typ. 80A STripFET
生命週期:: 製造商新產品
數據表:: STB100N10F7 數據表
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更多信息:: STB100N10F7 更多信息 STB100N10F7 Product Details

產品屬性
屬性值

製造商: 意法半導體

產品分類: 晶體管 - FET、MOSFET - 單

系列: N 溝道 STripFET

打包: 捲軸

單位重量: 0.139332 oz

安裝方式: 貼片/貼片

包裝盒: TO-252-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 150 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 15 ns

上升時間: 40 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 80 A

Vds-漏-源-擊穿電壓: 100 V

VGS-th-Gate-Source-Threshold-Voltage: 4.5 V

Rds-On-Drain-Source-Resistance: 8 mOhms

晶體管極性: N通道

典型關斷延遲時間: 46 ns

典型開啟延遲時間: 27 ns

Qg-門電荷: 61 nC

Tags: STB100N, STB100, STB10, STB1, STB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STB100N10F7 描述

***Components: In a Pack of 5, N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK STMicroelectronics STB100N10F7

***ure Electronics: N-channel 100 V 0.0068 Ohm Surface Mount Power Mosfet - D2PAK-3

***p One Stop Global: Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R

***et Europe: Trans MOSFET N-CH 100V 80A 3-Pin D2PAK T/R

***ied Electronics & Automation: MOSFET N-Channel 100V 80A STripFET D2PAK

***i-Key: MOSFET N-CH 100V 80A D2PAK

***ukat: N-Ch 100V 80A 150W 0,008R D²Pak

***ronik: N-CH 100V 80A 6,8mOhm D2Pak

***ark: Mosfet, N-Ch, 100V, 80A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0068Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 100V, 80A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:120W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:STripFET VII DeepGATE Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

***nell: MOSFET, CANALE N, 100V 80A, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:80A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0068ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:120W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:STripFET VII DeepGATE Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)

STB100N10F7 更多信息

STripFET Power MOSFETs: STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. STMicroelectronics STripFET™ Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses and high power density. These STripFET™ Power MOSFETs offer among the industry's lowest RDS(on) 30V-150V power MOSFETs in the market.

STripFET™ F7 Power MOSFETs: STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. The STripFET F7 feature high avalanche ruggedness.

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

Market price

型號	製造商	描述	庫存	價格
STB100N10F7 DISTI # 497-14527-1-ND	STMicroelectronics	MOSFET N-CH 100V 80A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
STB100N10F7 DISTI # 497-14527-6-ND	STMicroelectronics	MOSFET N-CH 100V 80A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
STB100N10F7 DISTI # 497-14527-2-ND	STMicroelectronics	MOSFET N-CH 100V 80A D2PAK RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$1.2170
STB100N10F7 DISTI # STB100N10F7	STMicroelectronics	Trans MOSFET N-CH 100V 80A 3-Pin D2PAK T/R - Tape and Reel (Alt: STB100N10F7) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$1.1429 2000:$1.0899 4000:$1.0399 6000:$0.9939 10000:$0.9739
STB100N10F7 DISTI # 511-STB100N10F7	STMicroelectronics	MOSFET N-Ch 100V 0.0068 Ohm typ. 80A STripFET RoHS: Compliant	0	1:$2.2500 10:$1.9100 100:$1.5300 500:$1.3400 1000:$1.1100
STB100N10F7 DISTI # 2889915	STMicroelectronics	MOSFET, N-CH, 100V, 80A, TO-263 RoHS: Compliant	0	1:£1.7500 10:£1.3800 100:£1.1100 250:£1.0600 500:£1.0100

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