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FJBE2150DTU

FJBE2150DTU
Mfr. #:
FJBE2150DTU
製造商:
ON Semiconductor / Fairchild
描述:
Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
生命週期:
製造商新產品
數據表:
FJBE2150DTU 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FJBE2150DTU Datasheet
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
雙極晶體管 - BJT
RoHS：
Y
安裝方式：
貼片/貼片
包裝/案例：
D2PAK-3
晶體管極性：
NPN
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
800 V
集電極-基極電壓 VCBO：
1.25 kV
發射極基極電壓 VEBO：
12 V
集電極-發射極飽和電壓：
0.25 V
最大直流集電極電流：
2 A
增益帶寬積 fT：
5 MHz
最低工作溫度：
- 55 C
最高工作溫度：
+ 125 C
系列：
FJBE2150D
直流電流增益 hFE 最大值：
35
打包：
管子
品牌：
安森美半導體/飛兆半導體
連續集電極電流：
0.5 A
DC 集電極/基極增益 hfe 最小值：
20
Pd - 功耗：
110 W
產品類別：
BJT - 雙極晶體管
出廠包裝數量：
1000
子類別：
晶體管
單位重量：
0.066315 oz
Tags
FJB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
***ical
Trans GP BJT NPN 800V 2A 110000mW 3-Pin(2+Tab) D2PAK Rail
***r Electronics
Power Bipolar Transistor, 2A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin
***rchild Semiconductor
The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1500 volts and up to 3 amps, while providing exceptionally low on-resistance and very low switching losses.The ESBC™ switch is designed to be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance.The FJBE2150D provides exceptional reliability and a large operating range due to its square Reverse-Bias-Safe-Operating-Area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures.The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in high-voltage HV-D2PAK rated at 2500 V creepage and clearance.
型號 製造商 描述 庫存 價格
FJBE2150DTU
DISTI # FJBE2150DTU-ND		ON SemiconductorTRANS NPN 800V 2A D2-PAK-2L
RoHS: Compliant
Container: Tube		Limited Supply - Call
    FJBE2150DTU
    DISTI # 96W6437    		ON SemiconductorNPN/1250V/3A / RAIL0
      圖片 型號 描述
      FJBE2150DTU

      Mfr.#: FJBE2150DTU

      OMO.#: OMO-FJBE2150DTU

      		 Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
      FJBE2150DTU

      Mfr.#: FJBE2150DTU

      OMO.#: OMO-FJBE2150DTU-ON-SEMICONDUCTOR

      		 TRANS NPN 800V 2A D2-PAK-2L
      FJBE2150D

      Mfr.#: FJBE2150D

      OMO.#: OMO-FJBE2150D-1190

      		 全新原裝
      可用性
      庫存:
      Available
      訂購:
      3500
      輸入數量:
      FJBE2150DTU的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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