MR4A16BYS35R

Mfr. #:: MR4A16BYS35R
製造商:: Everspin Technologies
描述:: NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
生命週期:: 製造商新產品
數據表:: MR4A16BYS35R 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: MR4A16BYS35R 更多信息

產品屬性
屬性值

製造商: Everspin 技術公司

產品分類: 記憶

系列: MR4A16B

打包: 捲帶 (TR) 替代包裝

安裝方式: 貼片/貼片

包裝盒: TSOP-54

工作溫度: 0°C ~ 70°C (TA)

界面: 平行線

電壓供應: 3 V ~ 3.6 V

供應商-設備-包: 54-TSOP2

內存大小: 16M (1M x 16)

內存型: MRAM（磁阻RAM）

速度: 35ns

訪問時間: 35 ns

格式化內存: 內存

最高工作溫度: + 70 C

最低工作溫度: 0 C

工作電源電流: 110 mA

接口類型: 平行線

組織: 1 M x 16

數據總線寬度: 16 bit

最大電源電壓: 3.6 V

電源電壓最小值: 3 V

Tags: MR4A16B, MR4A1, MR4A, MR4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MR4A16BYS35R 評級和評論

A***m

works perfectly. thanks :-) very quick postage also!

2019-06-10

D***z

That's right. Fast shipping. Pending testing and checking operation.

2019-04-30

MR4A16BYS35R 描述

***ical: NVRAM MRAM Parallel 16Mbit 3.3V 54-Pin TSOP T/R

***i-Key: IC RAM 16M PARALLEL 54TSOP2

MR4A16BYS35R 更多信息

MR4A08B / MR4A16B 16Mb Parallel MRAMs: Everspin Technologies MR4A08B and MR4A16B 16Mb Parallel MRAM devices provide SRAM compatible 35ns read/write timing with unlimited endurance. The Everspin Technologies MR4A08B is a 16,777,216-bit Magnetoresistive Random Access Memory (MRAM) device organized as 2,097,152 words of 8 bits.

Magnetoresistive Random Access Memory (MRAM): Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Everspin MRAM

Market price

型號	製造商	描述	庫存	價格
MR4A16BYS35R DISTI # MR4A16BYS35R-ND	Everspin Technologies	IC RAM 16M PARALLEL 54TSOP2 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$23.3282
MR4A16BYS35 DISTI # 936-MR4A16BYS35	Everspin Technologies	NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM RoHS: Compliant	139	1:$30.5000 5:$29.6000 10:$28.4000 25:$28.0900 50:$27.4000 100:$24.0600 250:$23.2400
MR4A16BYS35R DISTI # 936-MR4A16BYS35R	Everspin Technologies	NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM RoHS: Compliant	0	1:$30.8700 5:$29.9600 10:$28.7500 25:$28.4300 50:$27.7300 100:$24.3500 250:$23.5200 500:$23.3300

相關產品

圖片	型號	描述
	Mfr.#: MR4A16BCYS35R OMO.#: OMO-MR4A16BCYS35R	NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
	Mfr.#: MR4A16BCMA35 OMO.#: OMO-MR4A16BCMA35	NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
	Mfr.#: MR4A16BYS35 OMO.#: OMO-MR4A16BYS35	NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
	Mfr.#: MR4A16BCMA35R OMO.#: OMO-MR4A16BCMA35R-EVERSPIN-TECHNOLOGIES	IC RAM 16M PARALLEL 48FBGA
	Mfr.#: MR4A16BYS35 OMO.#: OMO-MR4A16BYS35-EVERSPIN-TECHNOLOGIES	NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
	Mfr.#: MR4A16BMA35R OMO.#: OMO-MR4A16BMA35R-EVERSPIN-TECHNOLOGIES	IC RAM 16M PARALLEL 48FBGA
	Mfr.#: MR4A16BYS35R OMO.#: OMO-MR4A16BYS35R-EVERSPIN-TECHNOLOGIES	NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
	Mfr.#: MR4A16BCMA35 OMO.#: OMO-MR4A16BCMA35-EVERSPIN-TECHNOLOGIES	IC RAM 16M PARALLEL 48FBGA
	Mfr.#: MR4A16AVMA35 OMO.#: OMO-MR4A16AVMA35-1190	全新原裝
	Mfr.#: MR4A16BUYS45 OMO.#: OMO-MR4A16BUYS45-1190	16Mb 1Mx16 Voltage 3.3V MRAM