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FGH20N60SFDTU

FGH20N60SFDTU
Mfr. #:
FGH20N60SFDTU
製造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors 600V 20A Field Stop
生命週期:
製造商新產品
數據表:
FGH20N60SFDTU 數據表
交貨:
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ECAD Model:
更多信息:
FGH20N60SFDTU 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-247AB-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
600 V
最大柵極發射極電壓：
20 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
系列：
FGH20N60SFD
打包：
管子
連續集電極電流 Ic 最大值：
40 A
高度：
20.6 mm
長度：
15.6 mm
寬度：
4.7 mm
品牌：
安森美半導體/飛兆半導體
產品類別：
IGBT晶體管
出廠包裝數量：
450
子類別：
IGBT
單位重量：
0.225401 oz
Tags
FGH20N60SFDT, FGH20N60SF, FGH20N60S, FGH20N60, FGH20N, FGH20, FGH2, FGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-247AB Rail
***ure Electronics
FGH20N60SFD Series 600 V 40 A Flange Mount Field Stop IGBT - TO-247
*** Source Electronics
High current capability, High input impedance | IGBT 600V 40A 165W TO247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,FAST,W/DIO,600V,40A,TO247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:165W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:165W
***ical
Trans IGBT Chip N=-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-247AB Tube
***ure Electronics
FGH20N60UFD Series 600 V 40 A Flange Mount Field Stop IGBT - TO-247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,FAST,W/DIO,600V,40A,TO247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:165W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:165W
***ical
Trans IGBT Chip N=-CH 600V 40A 166000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
IKW20N60T Series 600 V 40 A Through Hole TRENCHSTOP™ IGBT -PG-TO247-3
***ineon SCT
600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
***nell
IGBT, N, 600V, 20A, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.05V; Power Dissipation Pd: 166W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; Operating Temper
***ark
IGBT, N, 600V, 20A, TO-247; Transistor Type:IGBT; Voltage, Vces:600V; Current, Ic Continuous a Max:20A; Voltage, Vce Sat Max:2.05V; Power Dissipation:166W; Case Style:TO-247; Termination Type:Through Hole; Transistor Polarity:N; RoHS Compliant: Yes
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 20 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.5 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 166 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
*** Source Electronics
Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247
***ure Electronics
FGH80N60FD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild's field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,FAST,W/DIO,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
***ical
Trans IGBT Chip N-CH 600V 40A 167000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 600V, 40A, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 167W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins:
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 3.5pF 50volts C0G +/-0.05pF
***et
Trans IGBT Chip N-CH 600V 40A 3-Pin TO-247 Tube
*** Electronic Components
IGBT Transistors IGBT PRODUCTS TrenchStop
***or
IKW20N60 - AUTOMOTIVE IGBT DISCR
***i-Key
IGBT, 40A I(C), 600V V(BR)CES, N
*** Source Electronics
Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247
***ure Electronics
FGH40N60UFD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247
***-Wing Technology
FAIRCHILD SEMICONDUCTOR FGH40N60UFDTU IGBT Single Transistor, General Purpose, 80 A, 600 V, 290 W, 600 V, TO-247AB, 3 Pins
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,W DIODE,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
型號 製造商 描述 庫存 價格
FGH20N60SFDTU-F085
DISTI # V99:2348_14141783		ON SemiconductorN-CH/ 20A 600V FS IGBT396
  • 5000:$1.6990
  • 2500:$1.7070
  • 1000:$1.8110
  • 500:$2.1420
  • 250:$2.3870
  • 100:$2.5320
  • 10:$2.9070
  • 1:$3.3980
FGH20N60SFDTU
DISTI # FGH20N60SFDTU-ND		ON SemiconductorIGBT 600V 40A 165W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		429In Stock
  • 1350:$1.5509
  • 900:$1.8501
  • 450:$2.0995
  • 10:$2.7480
  • 1:$3.0400
FGH20N60SFDTU-F085
DISTI # FGH20N60SFDTU-F085-ND		ON SemiconductorIGBT 600V 20A 165W TO247
RoHS: Compliant
Min Qty: 450
Container: Tube		Temporarily Out of Stock
  • 450:$2.6793
FGH20N60SFDTU-F085
DISTI # 25943387		ON SemiconductorN-CH/ 20A 600V FS IGBT396
  • 250:$2.3870
  • 100:$2.5320
  • 10:$2.9070
  • 4:$3.3980
FGH20N60SFDTU
DISTI # FGH20N60SFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-247AB Tube - Rail/Tube (Alt: FGH20N60SFDTU)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 105
  • 450:$1.2900
  • 900:$1.1900
  • 1800:$1.1900
  • 2700:$1.1900
  • 4500:$1.0900
FGH20N60SFDTU
DISTI # FGH20N60SFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-247AB Tube (Alt: FGH20N60SFDTU)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 1599
  • 1:€1.5900
  • 10:€1.4900
  • 25:€1.2900
  • 50:€1.2900
  • 100:€1.1900
  • 500:€1.1900
  • 1000:€1.0900
FGH20N60SFDTU_F085
DISTI # FGH20N60SFDTU-F085		ON SemiconductorN-CH/ 20A 600V FS IGBT - Rail/Tube (Alt: FGH20N60SFDTU-F085)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$1.7900
  • 900:$1.6900
  • 1800:$1.6900
  • 2700:$1.6900
  • 4500:$1.6900
FGH20N60SFDTU
DISTI # 41T0508		ON SemiconductorIGBT,N CHANNEL,FAST,W/DIO,600V,40A,TO247,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):600V,Power Dissipation Pd:165W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Product Range:-,MSL:- RoHS Compliant: Yes721
  • 1:$2.9600
  • 10:$2.5300
  • 100:$2.0400
  • 500:$1.8000
  • 1000:$1.5100
  • 2500:$1.4200
  • 5000:$1.3600
FGH20N60SFDTU-F085
DISTI # 48AC1093		ON SemiconductorFS P TO247 20A 600V AUTO / TUBE0
  • 1:$3.7400
  • 100:$3.0800
  • 250:$2.8300
  • 500:$2.6400
  • 1000:$2.4900
FGH20N60SFDTU.
DISTI # 29AC6332		Fairchild Semiconductor CorporationFSPIGBT TO247 20A 600V ROHS COMPLIANT: YES0
  • 1:$2.9600
  • 10:$2.5300
  • 100:$2.0400
  • 500:$1.8000
  • 1000:$1.5100
  • 2500:$1.4200
  • 5000:$1.3600
FGH20N60SFDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AB
RoHS: Compliant		287
  • 1000:$1.4000
  • 500:$1.4700
  • 100:$1.5300
  • 25:$1.5900
  • 1:$1.7200
FGH20N60SFDTU
DISTI # 512-FGH20N60SFDTU		ON SemiconductorIGBT Transistors 600V 20A Field Stop
RoHS: Compliant		564
  • 1:$2.7900
  • 10:$2.3700
  • 100:$1.9000
  • 500:$1.6600
  • 1000:$1.3700
FGH20N60SFDTU-F085
DISTI # 512-FGH20N60SFDTF085		ON SemiconductorIGBT Transistors N-Ch 20A 600V FS IGBT
RoHS: Compliant		513
  • 1:$3.6500
  • 10:$3.1000
  • 100:$2.6900
  • 250:$2.5500
  • 500:$2.2900
  • 1000:$1.9300
  • 2500:$1.8300
FGH20N60SFDTUFairchild Semiconductor CorporationINSTOCK600
    FGH20N60SFDTU
    DISTI # 1885732    		ON SemiconductorIGBT,N CH,FAST,W/DIO,600V,40A,TO247
    RoHS: Compliant    		750
    • 1:£2.4700
    • 10:£1.8600
    • 100:£1.4800
    • 250:£1.4000
    • 500:£1.3100
    FGH20N60SFDTU
    DISTI # XSKDRABV0037675    		ON SEMICONDUCTOR 
    RoHS: Compliant    		1151
    • 450:$1.9300
    • 1151:$1.8100
    FGH20N60SFDTU
    DISTI # 1885732    		ON SemiconductorIGBT,N CH,FAST,W/DIO,600V,40A,TO247
    RoHS: Compliant    		721
    • 1:$4.4400
    • 10:$3.7700
    • 100:$3.0100
    • 500:$2.6500
    • 1000:$2.1900
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    可用性
    庫存:
    495
    訂購:
    2478
    輸入數量:
    FGH20N60SFDTU的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$2.33
    US$2.33
    10
    US$1.98
    US$19.80
    100
    US$1.59
    US$159.00
    500
    US$1.39
    US$695.00
    1000
    US$1.15
    US$1 150.00
    2500
    US$1.14
    US$2 850.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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