STW18NM60ND

Mfr. #:: STW18NM60ND
製造商:: STMicroelectronics
描述:: MOSFET N-CH 600V 13A TO-247
生命週期:: 製造商新產品
數據表:: STW18NM60ND 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: STW18NM60ND 更多信息 STW18NM60ND Product Details

產品屬性
屬性值

製造商: 英石

產品分類: FET - 單

系列: N 通道 MDmesh

打包: 管子

單位重量: 1.340411 oz

安裝方式: 通孔

包裝盒: TO-247-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 130 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 18 ns

上升時間: 15.5 ns

VGS-柵極-源極-電壓: 25 V

Id 連續漏極電流: 13 A

Vds-漏-源-擊穿電壓: 650 V

VGS-th-Gate-Source-Threshold-Voltage: 4 V

Rds-On-Drain-Source-Resistance: 290 mOhms

晶體管極性: N通道

典型關斷延遲時間: 13 ns

典型開啟延遲時間: 55 ns

Qg-門電荷: 34 nC

Tags: STW18NM6, STW18NM, STW18, STW1, STW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STW18NM60ND 描述

***ure Electronics: N-Channel 650 V 0.29 Ohm 130 W Flange Mount Power Mosfet - TO-247

***icroelectronics: N-channel 600 V, 0.25 Ohm typ., 13 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package

***r Electronics: Power Field-Effect Transistor, 13A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***icroelectronics: Automotive-grade N-channel 600 V, 0.26 Ohm, 13 A MDmesh(TM) II Power MOSFET in TO-247 package

***ure Electronics: STW19NM60 Series 600 V 13 A 285 mOhm Through Hole N-Ch Power MOSFET - TO-247-3

***et: Trans MOSFET N-CH 600V 13A 3-Pin TO-247 Tube

***(Formerly Allied Electronics): Power MOSFET Nchannel MDmesh II 600V 13A

*** Electronic Components: MOSFET N-Ch 600 V 0.27 Ohm 13 A MDmesh(TM)

***icroelectronics SCT: Automotive Power Discrete, 600V, 13A, TO-247, Tube

***el Electronic: Phase Locked Loops - PLL Reduction SSCGs COM

***S: French Electronic Distributor since 1988

***el Electronic: ±0.4°C Temperature Sensor with Daisy-Chain UART, EEPROM, and Alert Function 8-SOIC -55 to 125

***icroelectronics: N-channel 600V - 0.27Ohm - 13A - D2/I2PAK - TO-220/FP - TO-247

***r Electronics: Power Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***nell: MOSFET, N CH, 600V, 14A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: -; On Resistance Rds(on): 0.27ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 3V; Power Dissi

***ark: MOSFET N CH 600V 14A TO-247; Transistor Polarity:N Channel; On State Resistance:270mohm; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; Case Style:TO-247; Cont Current Id:7A; Termination Type:Through Hole;;RoHS Compliant: Yes

***icroelectronics: N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 package

***ure Electronics: N-Channel 600 V 0.28 O 110 W Flange Mount MDmesh II Plus Power Mosfet - TO-247-3

***el Electronic: 0.5% Accuracy Low-Voltage Adjustable Precision Shunt Regulator 3-TO-92 -40 to 125

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***nell: MOSFET, N-CH, 600V, 13A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.255ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe

***ure Electronics: Single N-Channel 600 V 0.4 Ohms Flange Mount Power Mosfet - TO-247AC

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***ment14 APAC: N CHANNEL MOSFET, 600V, 16A, TO-247; Tra; N CHANNEL MOSFET, 600V, 16A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3

***nell: MOSFET, N, 600V, 16A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:16A; Resistance, Rds On:0.4ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:64A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:280W; Power, Pd:280W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.45°C/W; Transistors, No. of:1; Voltage, Vds:600V; Voltage, Vds Max:600V

***ure Electronics: Single N-Channel 600 V 0.4 Ohms Flange Mount Power Mosfet - TO-247

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***nell: MOSFET, N TO-247AC 600V 16A; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):400mohm; Power Dissipation Pd:280W; Transistor Case Style:TO-247AC; No. of Pins:3; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.45°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:280W; Power Dissipation Pd:280W; Pulse Current Idm:64A; Voltage Vds:600V

***(Formerly Allied Electronics): IRFP17N50LPBF N-channel MOSFET Transistor; 16 A; 500 V; 3-Pin TO-247AC

***ure Electronics: IRFP17N50L Series N-Channel 500 V 0.28 Ohm 220 W Power Mosfet - TO-247AC

***nell: MOSFET, N, 500V, 16A, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 320ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 220W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Junction to Case Thermal Resistance A: 0.56°C/W; On State resistance @ Vgs = 10V: 320mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 64A; Voltage Vds Typ: 500V; Voltage Vgs Rds on Measurement: 10V

Market price

型號	製造商	描述	庫存	價格
STW18NM60ND DISTI # 497-13887-5-ND	STMicroelectronics	MOSFET N-CH 600V 13A TO-247 RoHS: Compliant Min Qty: 1 Container: Tube	254In Stock	120:$5.1345 30:$5.5967 1:$6.8700
STW18NM60ND	STMicroelectronics	N-Channel 650 V 0.29 Ohm 130 W Flange Mount Power Mosfet - TO-247 RoHS: Compliant	300Tube	600:$3.0000
STW18NM60ND DISTI # 511-STW18NM60ND	STMicroelectronics	MOSFET N-CH 600V 0.25Ohm 13A Fdmesh II RoHS: Compliant	0
STW18NM60ND	STMicroelectronics	AVAILABLE	1899
STW18NM60ND DISTI # XSFP00000145774	STMicroelectronics	RoHS: Compliant	202	34:$6.0000 202:$5.4500

相關產品

圖片	型號	描述
	Mfr.#: STW18N60DM2 OMO.#: OMO-STW18N60DM2	MOSFET N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-247 package
	Mfr.#: STW18N60M2 OMO.#: OMO-STW18N60M2	MOSFET N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 package
	Mfr.#: STW18NM60N OMO.#: OMO-STW18NM60N	MOSFET N-channel 600 V 0.27ohms 13A Mdmesh
	Mfr.#: STW18N65M5 OMO.#: OMO-STW18N65M5	MOSFET N-Ch 650V 0.198 Ohm 15A MDmesh FET
	Mfr.#: STW18NK60Z OMO.#: OMO-STW18NK60Z	MOSFET N-Ch 600 Volt 16 Amp
	Mfr.#: STW18N60M2 OMO.#: OMO-STW18N60M2-STMICROELECTRONICS	IGBT Transistors MOSFET POWER MOSFET
	Mfr.#: STW18NM60N OMO.#: OMO-STW18NM60N-STMICROELECTRONICS	MOSFET N-CH 600V 13A TO-247
	Mfr.#: STW18N65M5 OMO.#: OMO-STW18N65M5-STMICROELECTRONICS	MOSFET N CH 650V 15A TO-247
	Mfr.#: STW18NM60N,W18NM60N OMO.#: OMO-STW18NM60N-W18NM60N-1190	全新原裝
	Mfr.#: STW18NM80,18NM80 OMO.#: OMO-STW18NM80-18NM80-1190	全新原裝