IRF60R217

Mfr. #:: IRF60R217
製造商:: Infineon Technologies
描述:: MOSFET N-CH 60V 58A
生命週期:: 製造商新產品
數據表:: IRF60R217 數據表
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ECAD Model:
更多信息:: IRF60R217 更多信息

產品屬性
屬性值

製造商: 國際整流器

產品分類: 晶體管 - FET、MOSFET - 單

Tags: IRF60, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF60R217 描述

***Components: On a Reel of 2000, N-Channel MOSFET, 58 A, 60 V, 3-Pin DPAK Infineon IRF60R217

***ure Electronics: Single N-Channel 60 V 9.9 mOhm 40 nC HEXFET® Power Mosfet - DPAK

***ical: Trans MOSFET N-CH Si 60V 58A 3-Pin(2+Tab) TO-252 T/R

***et: Trans MOSFET N 60V 58A 3-Pin DPAK T/R

***i-Key: MOSFET N-CH 60V 58A

***ark: Mosfet, N-Ch, 60V, 58A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:58A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.008Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Power Dissipationrohs Compliant: Yes

***ment14 APAC: MOSFET, N-CH, 60V, 58A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, N-CH, 60V, 58A, TO-252; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:58A; Napięcie drenu / źródła Vds:60V; Rezystancja przewodzenia Rds(on):0.008ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3.7V; Straty mocy Pd:83W; Rodzaj obudowy tranzystora:TO-252; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018)

IRF60R217 更多信息

StrongIRFET™ Power MOSFETs: Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability.

Market price

型號	製造商	描述	庫存	價格
IRF60R217 DISTI # V72:2272_14701517	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 58A T/R RoHS: Compliant	1040	1000:$0.5780 500:$0.7042 250:$0.7654 100:$0.7915 25:$0.9714 10:$0.9832 1:$1.1142
IRF60R217 DISTI # IRF60R217CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 58A RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1214In Stock	1000:$0.7585 500:$0.9608 100:$1.2389 10:$1.5680 1:$1.7700
IRF60R217 DISTI # IRF60R217DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 58A RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1214In Stock	1000:$0.7585 500:$0.9608 100:$1.2389 10:$1.5680 1:$1.7700
IRF60R217 DISTI # IRF60R217TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 58A RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$0.6873
IRF60R217 DISTI # 30181895	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 58A T/R RoHS: Compliant	1040	1000:$0.5780 500:$0.7042 250:$0.7654 100:$0.7915 25:$0.9714 15:$0.9832
IRF60R217 DISTI # IRF60R217	Infineon Technologies AG	Trans MOSFET N 60V 58A 3-Pin DPAK T/R - Tape and Reel (Alt: IRF60R217) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0	2000:$0.5139 4000:$0.4949 8000:$0.4769 12000:$0.4609 20000:$0.4529
IRF60R217 DISTI # 34AC1773	Infineon Technologies AG	MOSFET, N-CH, 60V, 58A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:58A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.7V,Power DissipationRoHS Compliant: Yes	3806	1:$1.4700 10:$1.2500 25:$1.1500 50:$1.0600 100:$0.9600 250:$0.9040 500:$0.8480 1000:$0.6700
IRF60R217 DISTI # 942-IRF60R217	Infineon Technologies AG	MOSFET 60V, 58A, 9.9 mOhm 40 nC Qg RoHS: Compliant	5380	1:$1.4700 10:$1.2500 100:$0.9600 500:$0.8480 1000:$0.6700
IRF60R217 DISTI # 1236145P	Infineon Technologies AG	STRONGIR FET 60V 58A9.9 MOHMDPAK, RL	1920	50:£0.3720
IRF60R217 DISTI # 2781111	Infineon Technologies AG	MOSFET, N-CH, 60V, 58A, TO-252 RoHS: Compliant	3806	5:$2.2100 25:$1.9300 100:$1.5700 250:$1.3300 500:$1.1500 1000:$1.0900 5000:$1.0300
IRF60R217 DISTI # 2781111	Infineon Technologies AG	MOSFET, N-CH, 60V, 58A, TO-252 RoHS: Compliant	3811	5:£0.7330 25:£0.6070 100:£0.5440 250:£0.5020 500:£0.4690
IRF60R217 DISTI # C1S322000625738	Infineon Technologies AG	MOSFETs	1040	250:$0.8080 100:$0.8106 25:$0.9864 10:$0.9909

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