MRFE6S9045NR1

Mfr. #:: MRFE6S9045NR1
製造商:: NXP / Freescale
描述:: RF MOSFET Transistors HV6E 45W NI270-2 FET
生命週期:: 製造商新產品
數據表:: MRFE6S9045NR1 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商：: 恩智浦

產品分類：: 射頻 MOSFET 晶體管

RoHS：: E

晶體管極性：: N通道

技術：: 矽

Vds - 漏源擊穿電壓：: 66 V

最低工作溫度：: - 65 C

最高工作溫度：: + 150 C

安裝方式：: 貼片/貼片

包裝/案例：: TO-270

打包：: 捲軸

配置：: 單身的

高度：: 2.08 mm

長度：: 9.7 mm

系列：: MRFE6S9045NR1

類型：: 射頻功率MOSFET

寬度：: 6.15 mm

品牌：: 恩智浦/飛思卡爾

頻道模式：: 增強

濕氣敏感：: 是的

產品類別：: 射頻 MOSFET 晶體管

出廠包裝數量：: 500

子類別：: MOSFET

Vgs - 柵源電壓：: - 0.5 V, 12 V

第 # 部分別名：: 935316813528

單位重量：: 0.018679 oz

Tags: MRFE6S9045, MRFE6S904, MRFE6S90, MRFE6S9, MRFE6S, MRFE6, MRFE, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRFE6S9045NR1 評級和評論

H***d

good

2019-06-10

F***n

Trés bien!

2019-04-18

P***E

Perfect

2019-05-06

MRFE6S9045NR1 描述

***escale Semiconductor: Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 10 W Avg., 28 V

***W: RF Power Transistor,865 to 960 MHz, 45 W, Typ Gain in dB is 22.1 @ 880 MHz, 28 V, LDMOS, SOT1732

***icontronic: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270

***ment14 APAC: RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF MOSFET; Drain Source Voltage Vds:66V; Operating Frequency Min:920MHz; Operating Frequency Max:960MHz; RF Transistor Case:TO-270; No. of Pins:2; Filter Terminals:Surface Mount

***ark: RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:66V; RF Transistor Case:TO-270; Gain:22.1dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:880MHz ;RoHS Compliant: Yes

***escale Semiconductor: Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 14 W Avg., 28 V

***W: RF Power Transistor,470 to 960 MHz, 60 W, Typ Gain in dB is 21.1 @ 880 MHz, 28 V, LDMOS, SOT1732

***nsix Microsemi: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270AA

***ark: RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:66V; RF Transistor Case:TO-270; Gain:21.1dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:880MHz ;RoHS Compliant: Yes

***nell: TRANSISTOR, RF, 66V, TO-270-2; Drain Source Voltage Vds: 66VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 470MHz; Operating Frequency Max: 960MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***W: RF Power Transistor,450 to 1500 MHz, 10 W, Typ Gain in dB is 18 @ 960 MHz, 28 V, LDMOS, SOT1732

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V, FM2F

***ment14 APAC: RF MOSFET, N CHANNEL, 68V, TO-270; Drain Source Voltage Vds:68V; RF Transistor Case:TO-270; MSL:MSL 3 - 168 hours; Termination Type:SMD; Gain:18dB; Peak Reflow Compatible (260 C):Yes; Transistor Polarity:N Channel

***ark: RF MOSFET, N CHANNEL, 68V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:68V; RF Transistor Case:TO-270; Gain:18dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:900MHz ;RoHS Compliant: Yes

***W: RF Power Transistor,1600 to 2200 MHz, 10 W, Typ Gain in dB is 15.5 @ 2170 MHz, 28 V, LDMOS, SOT1731

*** Semiconductors SCT: GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V, FM2

***et: Transistor RF FET N-CH 68V 1600MHz to 2200MHz 3-Pin TO-270G T/R

***ure Electronics: MRF6S20010 Series 28 V 2170 MHz RF Power Field Effect Transistor - TO-270G-2

***p One Stop Global: Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R

***nsix Microsemi: RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270BA

***i-Key: MOSFET RF N-CH 28V 10W TO2702 GW

*** Electronic Components: RF MOSFET Transistors HV6 2GHZ 10W

***or: RF MOSFET LDMOS 28V TO270-2 GULL

***ment14 APAC: RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G

***i-Key Marketplace: RF S BAND, N-CHANNEL POWER MOSFE

***nell: RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G; Drain Source Voltage Vds: 68V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 2.2GHz; Operating Frequency Max: 1.6GHz; RF Transistor Case: TO-270G; No. of

***W: RF Power Transistor,1600 to 2200 MHz, 10 W, Typ Gain in dB is 15.5 @ 2170 MHz, 28 V, LDMOS, SOT1732

*** Semiconductors SCT: GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V, ,

***et: Transistor RF FET N-CH 68V 1600MHz to 2200MHz 3-Pin TO-270 T/R

***icontronic: RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270AA

***ponent Stockers USA: S BAND Si N-CHANNEL RF POWER MOSFET TO-270AA

*** Electronic Components: RF MOSFET Transistors HV6 2GHZ 10W TO270-2

***escale Semiconductor: Single W-CDMA Lateral N-Channel RF Power MOSFET, 2300-2700 MHz, 3 W Avg., 28 V

***et: Transistor RF FET N-CH 68V 2300MHz to 2700MHz 3-Pin TO-270 T/R

*** Electronic Components: RF MOSFET Transistors HV6 2.7GHZ 15W

***S: French Electronic Distributor since 1988

***i-Key Marketplace: RF S BAND, N-CHANNEL , TO-270AA

***W: RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F

***nell: TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

Market price

型號	製造商	描述	庫存	價格
MRFE6S9045NR1 DISTI # V72:2272_07204216	NXP Semiconductors	Trans RF MOSFET N-CH 66V 3-Pin TO-270 T/R RoHS: Compliant	55	25:$24.0700 10:$27.1300 1:$29.5800
MRFE6S9045NR1 DISTI # MRFE6S9045NR1CT-ND	NXP Semiconductors	FET RF 66V 880MHZ TO-270-2 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	721In Stock	100:$23.9244 10:$28.0170 1:$30.3800
MRFE6S9045NR1 DISTI # MRFE6S9045NR1DKR-ND	NXP Semiconductors	FET RF 66V 880MHZ TO-270-2 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	721In Stock	100:$23.9244 10:$28.0170 1:$30.3800
MRFE6S9045NR1 DISTI # MRFE6S9045NR1TR-ND	NXP Semiconductors	FET RF 66V 880MHZ TO-270-2 RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	Limited Supply - Call	500:$21.0882
MRFE6S9045NR1 DISTI # 25767380	NXP Semiconductors	Trans RF MOSFET N-CH 66V 3-Pin TO-270 T/R RoHS: Compliant	55	25:$24.0700 10:$27.1300 1:$29.5800
MRFE6S9045NR1 DISTI # MRFE6S9045NR1	Avnet, Inc.	Trans MOSFET N-CH 66V 3-Pin TO-270 T/R - Tape and Reel (Alt: MRFE6S9045NR1) RoHS: Compliant Min Qty: 500 Container: Reel	Americas - 0	500:$22.1900 1000:$21.3900 2000:$20.4900 3000:$19.7900 5000:$19.3900
MRFE6S9045NR1 DISTI # MRFE6S9045NR1	Avnet, Inc.	Trans MOSFET N-CH 66V 3-Pin TO-270 T/R (Alt: MRFE6S9045NR1) RoHS: Compliant Min Qty: 500 Container: Tape and Reel	Asia - 0	500:$21.8304 1000:$21.2240 1500:$20.6504 2500:$20.1070 5000:$19.8458 12500:$19.5914 25000:$19.1016
MRFE6S9045NR1 DISTI # 31AC6668	NXP Semiconductors	TRANSISTOR, RF, 66V, TO-270-2,Drain Source Voltage Vds:66VDC,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:865MHz,Operating Frequency Max:960MHz,RF Transistor Case:TO-270,No. of Pins:2Pins,RoHS Compliant: Yes	345	1:$30.3800 10:$28.0200 25:$24.4500 50:$24.1900 100:$23.9300 250:$22.9300
MRFE6S9045NR1 DISTI # 54M7235	NXP Semiconductors	RF MOSFET, N CHANNEL, 66V, TO-270,Drain Source Voltage Vds:66V,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:920MHz,Operating Frequency Max:960MHz,RF Transistor Case:TO-270,No. of Pins:2Pins RoHS Compliant: Yes	0	1:$30.5700
MRFE6S9045NR1 DISTI # 841-MRFE6S9045NR1	NXP Semiconductors	RF MOSFET Transistors HV6E 45W NI270-2 FET RoHS: Compliant	509	1:$30.3800 5:$29.0400 10:$28.0200 25:$24.4500 100:$23.9300 250:$22.9300 500:$21.0900
MRFE6S9045NR1	Freescale Semiconductor	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270 RoHS: Compliant	267	1000:$20.1100 500:$21.1600 100:$22.0300 25:$22.9800 1:$24.7500
MRFE6S9045NR1 DISTI # MRFE6S9045NR1	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	0	1:$33.1600 10:$29.9800 25:$28.3400
MRFE6S9045NR1 DISTI # 2776257	NXP Semiconductors	TRANSISTOR, RF, 66V, TO-270-2 RoHS: Compliant	345	1:$46.0400 5:$44.1200 10:$40.7300 50:$38.5100 100:$36.5200
MRFE6S9045NR1 DISTI # C1S233100192207	NXP Semiconductors	Trans RF MOSFET N-CH 66V 3-Pin TO-270 T/R RoHS: Compliant	55	25:$24.0600 10:$27.1300 1:$29.5900
MRFE6S9045NR1 DISTI # 2776257	NXP Semiconductors	TRANSISTOR, RF, 66V, TO-270-2 RoHS: Compliant	345	1:£23.2100 5:£22.1900 10:£18.6700 50:£18.1000 100:£17.5200

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