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SIZ980DT-T1-GE3

SIZ980DT-T1-GE3
Mfr. #:
SIZ980DT-T1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
生命週期:
製造商新產品
數據表:
SIZ980DT-T1-GE3 數據表
交貨:
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支付:
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HTML Datasheet:
SIZ980DT-T1-GE3 DatasheetSIZ980DT-T1-GE3 Datasheet (P4-P6)SIZ980DT-T1-GE3 Datasheet (P7-P9)SIZ980DT-T1-GE3 Datasheet (P10-P12)SIZ980DT-T1-GE3 Datasheet (P13-P14)
ECAD Model:
更多信息:
SIZ980DT-T1-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
PowerPAIR-6x5-8
通道數：
2 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
30 V
Id - 連續漏極電流：
20 A, 60 A
Rds On - 漏源電阻：
4.7 mOhms, 1.1 mOhms
Vgs th - 柵源閾值電壓：
1.2 V, 1.1 V
Vgs - 柵源電壓：
- 16 V, 20 V
Qg - 門電荷：
18 nC, 77 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
20 W, 66 W
配置：
雙重的
頻道模式：
增強
商品名：
溝槽場效應晶體管
打包：
捲軸
高度：
0.75 mm
長度：
6 mm
系列：
工業區
晶體管類型：
2 N-Channel
寬度：
5 mm
品牌：
威世 / Siliconix
正向跨導 - 最小值：
80 S, 155 S
秋季時間：
10 ns, 10 ns
產品類別：
MOSFET
上升時間：
65 ns, 75 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
10 ns, 30 ns
典型的開啟延遲時間：
15 ns, 35 ns
Tags
SIZ9, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 30V 20A/60A 8-Pin PowerPAIR T/R
***et
DUAL N-CHANNEL 30-V (D-S) MOSFET
***ark
Mosfet, Dual N-Ch, 30V, 60A, Powerpair; Transistor Polarity:dual N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0011Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Rohs Compliant: Yes
SkyFET® Power MOSFETs
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
型號 製造商 描述 庫存 價格
SIZ980DT-T1-GE3
DISTI # SIZ980DT-T1-GE3TR-ND		Vishay SiliconixMOSFET 2 N-CH 30V 8-POWERPAIR
RoHS: Not compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 3000:$0.7238
SIZ980DT-T1-GE3
DISTI # SIZ980DT-T1-GE3CT-ND		Vishay SiliconixMOSFET 2 N-CH 30V 8-POWERPAIR
RoHS: Not compliant
Min Qty: 1
Container: Cut Tape (CT)		6000In Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIZ980DT-T1-GE3
DISTI # SIZ980DT-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2 N-CH 30V 8-POWERPAIR
RoHS: Not compliant
Min Qty: 1
Container: Digi-Reel®		6000In Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIZ980DT-T1-GE3
DISTI # SIZ980DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 20A/60A 8-Pin PowerPAIR T/R (Alt: SIZ980DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 50
  • 3000:€1.3109
  • 6000:€0.9399
  • 12000:€0.7619
  • 18000:€0.6739
  • 30000:€0.6449
SIZ980DT-T1-GE3
DISTI # SIZ980DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 20A/60A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ980DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.6839
  • 6000:$0.6629
  • 12000:$0.6359
  • 18000:$0.6189
  • 30000:$0.6019
SIZ980DT-T1-GE3
DISTI # 78-SIZ980DT-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
RoHS: Compliant		5963
  • 1:$1.6500
  • 10:$1.3600
  • 100:$1.0400
  • 500:$0.8940
  • 1000:$0.8460
  • 3000:$0.7840
SIZ980DT-T1-GE3
DISTI # 2802798		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 60A, POWERPAIR
RoHS: Compliant		0
  • 5:£1.0900
  • 25:£0.9590
  • 100:£0.8280
  • 250:£0.7740
  • 500:£0.7190
SIZ980DT-T1-GE3
DISTI # 2802798		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 60A, POWERPAIR
RoHS: Compliant		0
  • 5:$2.7800
  • 25:$2.3000
  • 100:$1.8100
  • 250:$1.4900
  • 500:$1.2600
  • 1000:$1.1900
  • 5000:$1.1500
SIZ980DT-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
RoHS: Compliant		Americas -
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    可用性
    庫存:
    Available
    訂購:
    1988
    輸入數量:
    SIZ980DT-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$1.64
    US$1.64
    10
    US$1.35
    US$13.50
    100
    US$1.03
    US$103.00
    500
    US$0.89
    US$447.00
    1000
    US$0.70
    US$705.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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