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IPP65R280C6XKSA1

IPP65R280C6XKSA1
Mfr. #:
IPP65R280C6XKSA1
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 700V 13.8A TO220-3 CoolMOS C6
生命週期:
製造商新產品
數據表:
IPP65R280C6XKSA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
650 V
Id - 連續漏極電流：
13.8 A
Rds On - 漏源電阻：
250 mOhms
Vgs th - 柵源閾值電壓：
2.5 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
45 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
104 W
配置：
單身的
頻道模式：
增強
商品名：
酷摩
打包：
管子
高度：
15.65 mm
長度：
10 mm
系列：
CoolMOS C6
晶體管類型：
1 N-Channel
寬度：
4.4 mm
品牌：
英飛凌科技
秋季時間：
12 ns
產品類別：
MOSFET
上升時間：
11 ns
出廠包裝數量：
500
子類別：
MOSFET
典型關斷延遲時間：
105 ns
典型的開啟延遲時間：
13 ns
第 # 部分別名：
IPP65R280C6XKSA1 SP000785058
單位重量：
0.211644 oz
Tags
IPP65R28, IPP65R2, IPP65, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-220 Tube
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS
***ark
Mosfet, N-Ch, 13.8A, 650V, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:13.8A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.25Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ure Electronics
Single N-Channel 600 V 280 mOhm 25.5 nC CoolMOS™ Power Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 650V 13.8A 3-Pin TO-220 Tube - Rail/Tube
***el Electronic
INFINEON IPP60R280P6Power MOSFET, N Channel, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHS
***nell
MOSFET, N-CH, 600V, 13.8A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.252ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***ical
Trans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-220
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS
***nell
MOSFET,N CH,600V,13.8A,TO220; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; Current Id Max:13.8A; Power Dissipation Pd:104W; Voltage Vgs Max:30V
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ure Electronics
Single N-Channel 600 V 250 mOhm 35 nC CoolMOS™ Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:650V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:12A; Package / Case:TO-220; Power Dissipation Pd:104W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in TO-220 package
***ure Electronics
STP18N65M5 Series 650 V 0.22 Ohm N-Channel MDmesh™ V Power Mosfet - TO-220
***ical
Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220AB Tube
***ark
MOSFET, N-CH, 650V, 15A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:15A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 15A I(D), 650V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220
***ical
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220AB Tube
***ark
MOSFET, N CH, 500V, 14A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; No. of Pins:3Pins RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 14A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 15 A, 260 mΩ, TO-220
***el Electronic
FAIRCHILD SEMICONDUCTOR FCP260N60E Power MOSFET, N Channel, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V
***r Electronics
Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***Yang
Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220 - Rail/Tube
***nell
MOSFET, N-CH, 600V, 15A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.22ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:156W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
型號 製造商 描述 庫存 價格
IPP65R280C6XKSA1
DISTI # IPP65R280C6XKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 13.8A TO220
RoHS: Compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
    IPP65R280C6XKSA1
    DISTI # 22AC4486    		Infineon Technologies AGMOSFET, N-CH, 13.8A, 650V, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:13.8A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.25ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes0
      IPP65R280C6
      DISTI # 726-IPP65R280C6      		Infineon Technologies AGMOSFET N-Ch 700V 13.8A TO220-3 CoolMOS C6
      RoHS: Compliant      		0
      • 1:$2.5200
      • 10:$2.1500
      • 100:$1.7200
      • 500:$1.5000
      IPP65R280C6XKSA1
      DISTI # 726-IPP65R280C6XKSA1      		Infineon Technologies AGMOSFET N-Ch 700V 13.8A TO220-3 CoolMOS C6
      RoHS: Compliant      		0
        圖片 型號 描述
        IPP65R280E6XKSA1

        Mfr.#: IPP65R280E6XKSA1

        OMO.#: OMO-IPP65R280E6XKSA1

        		 MOSFET LOW POWER_LEGACY
        IPP65R280C6XKSA1

        Mfr.#: IPP65R280C6XKSA1

        OMO.#: OMO-IPP65R280C6XKSA1

        		 MOSFET N-Ch 700V 13.8A TO220-3 CoolMOS C6
        IPP65R280E6XKSA1

        Mfr.#: IPP65R280E6XKSA1

        OMO.#: OMO-IPP65R280E6XKSA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 650V 13.8A TO220
        IPP65R280C6

        Mfr.#: IPP65R280C6

        OMO.#: OMO-IPP65R280C6-1190

        		 Trans MOSFET N-CH 650V 13.8A 3-Pin TO-220 Tube (Alt: IPP65R280C6)
        IPP65R280C6XKSA1

        Mfr.#: IPP65R280C6XKSA1

        OMO.#: OMO-IPP65R280C6XKSA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 650V 13.8A TO220
        IPP65R280E6

        Mfr.#: IPP65R280E6

        OMO.#: OMO-IPP65R280E6-126

        		 IGBT Transistors MOSFET N-Ch 700V 13.8A TO220-3 CoolMOS E6
        可用性
        庫存:
        Available
        訂購:
        2000
        輸入數量:
        IPP65R280C6XKSA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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