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IXTR90P20P

IXTR90P20P
Mfr. #:
IXTR90P20P
製造商:
Littelfuse
描述:
MOSFET -90.0 Amps -200V 0.048 Rds
生命週期:
製造商新產品
數據表:
IXTR90P20P 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTR90P20P DatasheetIXTR90P20P Datasheet (P4-P5)
ECAD Model:
產品屬性
屬性值
製造商：
IXYS
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-247-3
晶體管極性：
P-通道
Vds - 漏源擊穿電壓：
200 V
Id - 連續漏極電流：
53 A
Rds On - 漏源電阻：
48 mOhms
Vgs th - 柵源閾值電壓：
4 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
205 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
312 W
頻道模式：
增強
商品名：
極地
打包：
管子
高度：
21.34 mm
長度：
16.13 mm
系列：
IXTR90P20
類型：
PolarP 功率 MOSFET
寬度：
5.21 mm
品牌：
IXYS
正向跨導 - 最小值：
30 S
秋季時間：
28 ns
產品類別：
MOSFET
上升時間：
60 ns
出廠包裝數量：
30
子類別：
MOSFET
典型關斷延遲時間：
89 ns
典型的開啟延遲時間：
32 ns
單位重量：
0.186952 oz
Tags
IXTR, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET P-CH 200V 53A ISOPLUS247
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.04Ohm;ID 56A;TO-220AB;PD 380W;VGS +/-20V
*** Source Electronics
Trans MOSFET N-CH 200V 56A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 56A TO-220AB
***ure Electronics
Single N-Channel 200 V 40 mOhm 220 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 380 W
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 200V, 56A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:200V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:380W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:56A; Junction to Case Thermal Resistance A:0.4°C/W; On State resistance @ Vgs = 10V:40ohm; Package / Case:TO-220AB; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Pulse Current Idm:220A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***emi
N-Channel Power MOSFET, UniFETTM, 200V, 61A, 41mΩ, TO-220
*** Source Electronics
MOSFET N-CH 200V 61A TO-220 / Trans MOSFET N-CH 200V 61A 3-Pin(3+Tab) TO-220 Tube
***ure Electronics
N-Channel 200 V 41 mO 417 W Flange Mount Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 61A I(D), 200V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:200V; On Resistance Rds(on):41mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:61A; Package / Case:TO-220; Power Dissipation Pd:417W; Power Dissipation Pd:417W; Pulse Current Idm:244A; Repetitive Avalanche Energy Max:41.7mJ; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.04Ohm;ID 50A;TO-247AC;PD 300W;VGS +/-20V
***itex
Transistor: N-MOSFET; unipolar; 200V; 50A; 0.04ohm; 300W; -55+175 deg.C; THT; TO247AC
***ure Electronics
Single N-Channel 200V 0.04 Ohm 234 nC HEXFET® Power Mosfet - TO-247AC
***fin
Transistor NPN Mos IRFP260/IRFP260N INTERNATIONAL RECTIFIER Ampere=50 V=200 TO247
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
MOSFET, N, 200V, 49A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:200V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Junction to Case Thermal Resistance A:0.5°C/W; Package / Case:TO-247AC; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:200A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
*** Source Electronics
Trans MOSFET N-CH Si 200V 50A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 200V 50A TO-247AC
***ure Electronics
Single N-Channel 200 V 0.04 Ohm 234 nC HEXFET® Power Mosfet - TO-247-3AC
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package, TO247-3, RoHS
***ark
Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:300W; No. of Pins:3Pins RoHS Compliant: Yes
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-247-3 Polarity: N Variants: Enhancement mode Power dissipation: 300 W
*** Stop Electro
Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ure Electronics
N-Channel 200 V 0.045 Ohm Flange Mount STripFET Power MosFet - TO-220
***ical
Trans MOSFET N-CH 200V 40A 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
N-channel 200V - 0.038Ohm -40A- D2PAK/TO-220/TO-220FP/TO-247
***ark
MOSFET, N CHANNEL, 200V, 40A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 40A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***roFlash
Mosfet Transistor, N Channel, 40 A, 200 V, 0.038 Ohm, 10 V, 3 V Rohs Compliant: Yes
***ure Electronics
N-Channel 200 V 45 mOhm Flange Mount STripFET Power Mosfet - TO-247
***icroelectronics
N-channel 200V - 0.038Ohm -40A- D2PAK/TO-220/TO-220FP/TO-247
***ark
MOSFET, N CH, 200V, 40A, TO-247; Transistor Polarity:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:40A; On Resistance Rds(on):0.038ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 40A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
型號 製造商 描述 庫存 價格
IXTR90P20P
DISTI # IXTR90P20P-ND		IXYS CorporationMOSFET P-CH 200V 53A ISOPLUS247
RoHS: Compliant
Min Qty: 300
Container: Tube		Temporarily Out of Stock
  • 300:$13.1797
IXTR90P20P
DISTI # 747-IXTR90P20P		IXYS CorporationMOSFET -90.0 Amps -200V 0.048 Rds
RoHS: Compliant		0
  • 1:$19.5600
  • 10:$17.7800
  • 25:$16.4400
  • 50:$15.1300
  • 100:$14.7600
  • 250:$13.5300
  • 500:$12.2800
圖片 型號 描述
IXTR90P20P

Mfr.#: IXTR90P20P

OMO.#: OMO-IXTR90P20P

 MOSFET -90.0 Amps -200V 0.048 Rds
IXTR90P10P

Mfr.#: IXTR90P10P

OMO.#: OMO-IXTR90P10P

 MOSFET -57.0 Amps -100V 0.270 Rds
IXTR90P20P

Mfr.#: IXTR90P20P

OMO.#: OMO-IXTR90P20P-IXYS-CORPORATION

 Darlington Transistors MOSFET -90.0 Amps -200V 0.048 Rds
IXTR90P10P

Mfr.#: IXTR90P10P

OMO.#: OMO-IXTR90P10P-IXYS-CORPORATION

 MOSFET -57.0 Amps -100V 0.270 Rds
可用性
庫存:
Available
訂購:
1500
輸入數量:
IXTR90P20P的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$19.56
US$19.56
10
US$17.78
US$177.80
25
US$16.44
US$411.00
50
US$15.13
US$756.50
100
US$14.76
US$1 476.00
250
US$13.53
US$3 382.50
500
US$12.28
US$6 140.00
1000
US$11.21
US$11 210.00
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