IPT60R102G7XTMA1

IPT60R102G7XTMA1
Mfr. #:
IPT60R102G7XTMA1
製造商:
Infineon Technologies
描述:
MOSFET HIGH POWER NEW
生命週期:
製造商新產品
數據表:
IPT60R102G7XTMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
IPT60R102G7XTMA1 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
HSOF-8
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
600 V
Id - 連續漏極電流:
23 A
Rds On - 漏源電阻:
88 mOhms
Vgs th - 柵源閾值電壓:
3 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
34 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
141 W
配置:
單身的
頻道模式:
增強
打包:
捲軸
系列:
CoolMOS G7
晶體管類型:
1 N-Channel
品牌:
英飛凌科技
秋季時間:
4 ns
產品類別:
MOSFET
上升時間:
5 ns
出廠包裝數量:
2000
子類別:
MOSFET
典型關斷延遲時間:
60 ns
典型的開啟延遲時間:
18 ns
第 # 部分別名:
IPT60R102G7 SP001579318
Tags
IPT60R1, IPT60, IPT6, IPT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 23A 9-Pin(8+Tab) HSOF T/R
***ark
Mosfet, N-Ch, 600V, 23A, 141W, Hsof; Transistor Polarity:n Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.088Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The CoolMOS C7 Gold series (G7) for the first time brings together the benefits of the improved 600V CoolMOS C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC. | Summary of Features: Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G; Enables best-in-class R DS(on) in smallest footprint | Benefits: Higher efficiency due to the improved C7 Gold technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept; Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements; Production cost reduction by moving to SMD through quicker assembly times | Target Applications: Telecom; Server; Solar; Industrial SMPS
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ C7 Gold (G7) Power MOSFETs
Infineon Technologies CoolMOS™ C7 Gold (G7) Power MOSFETs are housed in the new SMD TO-Leadless (TOLL) package using the Kelvin source concept. The G7 MOSFETs combine improved 600V and 650V CoolMOS™ G7 technology, 4-pin Kelvin source capability, and the improved thermal properties of the TO-Leadless package. This enables an SMD solution for high current hard switching topologies like power factor correction (PFC) up to 3kW. For the 600V CoolMOS™ G7, the MOSFETs can be used for resonant circuits like high end LLC.
型號 製造商 描述 庫存 價格
IPT60R102G7XTMA1
DISTI # V36:1790_16563204
Infineon Technologies AGHIGH POWER_NEW0
  • 2000000:$2.3580
  • 1000000:$2.3600
  • 200000:$2.5200
  • 20000:$2.7840
  • 2000:$2.8270
IPT60R102G7XTMA1
DISTI # V72:2272_16563204
Infineon Technologies AGHIGH POWER_NEW0
    IPT60R102G7XTMA1
    DISTI # IPT60R102G7XTMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 650V 23A HSOF-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    3980In Stock
    • 1000:$3.0653
    • 500:$3.6346
    • 100:$4.2695
    • 10:$5.2110
    • 1:$5.8000
    IPT60R102G7XTMA1
    DISTI # IPT60R102G7XTMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 650V 23A HSOF-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    3980In Stock
    • 1000:$3.0653
    • 500:$3.6346
    • 100:$4.2695
    • 10:$5.2110
    • 1:$5.8000
    IPT60R102G7XTMA1
    DISTI # IPT60R102G7XTMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 650V 23A HSOF-8
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape & Reel (TR)
    2000In Stock
    • 2000:$2.8272
    IPT60R102G7XTMA1
    DISTI # IPT60R102G7XTMA1
    Infineon Technologies AGTrans MOSFET N 650V 23A 8-Pin HSOF T/R (Alt: IPT60R102G7XTMA1)
    RoHS: Compliant
    Min Qty: 2000
    Americas - 0
    • 20000:$2.4900
    • 12000:$2.5900
    • 8000:$2.6900
    • 4000:$2.7900
    • 2000:$2.8900
    IPT60R102G7XTMA1
    DISTI # SP001579318
    Infineon Technologies AGTrans MOSFET N 650V 23A 8-Pin HSOF T/R (Alt: SP001579318)
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape and Reel
    Europe - 0
    • 20000:€2.2900
    • 8000:€2.5900
    • 12000:€2.5900
    • 4000:€2.8900
    • 2000:€3.5900
    IPT60R102G7XTMA1
    DISTI # 84AC6842
    Infineon Technologies AGMOSFET, N-CH, 600V, 23A, 141W, HSOF,Transistor Polarity:N Channel,Continuous Drain Current Id:23A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.088ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes302
    • 1000:$2.8600
    • 500:$3.3900
    • 250:$3.7800
    • 100:$3.9800
    • 50:$4.1800
    • 25:$4.3900
    • 10:$4.6000
    • 1:$5.4000
    IPT60R102G7XTMA1
    DISTI # 726-IPT60R102G7XTMA1
    Infineon Technologies AGMOSFET HIGH POWER NEW
    RoHS: Compliant
    19600
    • 1:$5.3500
    • 10:$4.5500
    • 100:$3.9400
    • 250:$3.7400
    • 500:$3.3600
    • 1000:$2.8300
    • 2000:$2.6900
    IPT60R102G7XTMA1
    DISTI # 2983372
    Infineon Technologies AGMOSFET, N-CH, 600V, 23A, 141W, HSOF2304
    • 500:£2.6100
    • 250:£2.9200
    • 100:£3.0700
    • 10:£3.5400
    • 1:£4.6100
    IPT60R102G7XTMA1
    DISTI # 2983372
    Infineon Technologies AGMOSFET, N-CH, 600V, 23A, 141W, HSOF
    RoHS: Compliant
    302
    • 1000:$4.0600
    • 500:$4.3800
    • 250:$4.8800
    • 100:$5.1500
    • 10:$5.9300
    • 1:$7.7300
    圖片 型號 描述
    UCY2D270MPD1TD

    Mfr.#: UCY2D270MPD1TD

    OMO.#: OMO-UCY2D270MPD1TD

    Aluminum Electrolytic Capacitors - Radial Leaded 27uF 200 Volts 20%
    SER2918H-103KL

    Mfr.#: SER2918H-103KL

    OMO.#: OMO-SER2918H-103KL-1190

    Fixed Inductors SER2918H AEC-Q200 10 uH 10 % 28 A
    UCY2D270MPD1TD

    Mfr.#: UCY2D270MPD1TD

    OMO.#: OMO-UCY2D270MPD1TD-NICHICON

    Aluminum Electrolytic Capacitors - Leaded 27uF 200 Volts 20%
    可用性
    庫存:
    19
    訂購:
    2002
    輸入數量:
    IPT60R102G7XTMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$5.35
    US$5.35
    10
    US$4.55
    US$45.50
    100
    US$3.94
    US$394.00
    250
    US$3.74
    US$935.00
    500
    US$3.36
    US$1 680.00
    1000
    US$2.83
    US$2 830.00
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