IPP80N04S3-03

Mfr. #:: IPP80N04S3-03
製造商:: Rochester Electronics, LLC
描述:: IGBT Transistors MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T
生命週期:: 製造商新產品
數據表:: IPP80N04S3-03 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: 晶體管 - FET、MOSFET - 單

系列: OptiMOS-T

打包: 管子

部分別名: IPP80N04S303AKSA1 IPP80N04S303XK SP000261229

單位重量: 0.211644 oz

安裝方式: 通孔

商品名: 優化MOS

包裝盒: TO-220-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 188 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 14 ns

上升時間: 17 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 80 A

Vds-漏-源-擊穿電壓: 40 V

Rds-On-Drain-Source-Resistance: 3.5 mOhms

晶體管極性: N通道

典型關斷延遲時間: 39 ns

典型開啟延遲時間: 25 ns

通道模式: 增強

Tags: IPP80N04S3-0, IPP80N04S3, IPP80N04, IPP80N, IPP80, IPP8, IPP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPP80N04S3-03 描述

***et Europe: Trans MOSFET N-CH 40V 80A 3-Pin(3+Tab) TO-220AB

***i-Key: MOSFET N-CH 40V 80A TO220-3

***ineon: Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.

Market price

型號	製造商	描述	庫存	價格
IPP80N04S303AKSA1 DISTI # IPP80N04S303AKSA1-ND	Infineon Technologies AG	MOSFET N-CH 40V 80A TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
IPP80N04S3-03	Infineon Technologies AG	Power Field-Effect Transistor, 80A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	345	1000:$1.1300 500:$1.1900 100:$1.2400 25:$1.2900 1:$1.3900
IPP80N04S303AKSA1 DISTI # N/A	Infineon Technologies AG	MOSFET N-CHANNEL_30/40V	0
IPP80N04S3-03 DISTI # 726-IPP80N04S3-03	Infineon Technologies AG	MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T RoHS: Compliant	0

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