IPL60R065C7AUMA1

IPL60R065C7AUMA1
Mfr. #:
IPL60R065C7AUMA1
製造商:
Infineon Technologies
描述:
MOSFET HIGH POWER_NEW
生命週期:
製造商新產品
數據表:
IPL60R065C7AUMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
IPL60R065C7AUMA1 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
VSON-4
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
600 V
Id - 連續漏極電流:
29 A
Rds On - 漏源電阻:
65 mOhms
Vgs th - 柵源閾值電壓:
3 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
68 nC
最低工作溫度:
- 40 C
最高工作溫度:
+ 150 C
Pd - 功耗:
180 W
配置:
單身的
頻道模式:
增強
商品名:
酷摩
打包:
捲軸
高度:
1.1 mm
長度:
8 mm
系列:
CoolMOS C7
寬度:
8 mm
品牌:
英飛凌科技
秋季時間:
3.5 ns
產品類別:
MOSFET
上升時間:
5 ns
出廠包裝數量:
3000
子類別:
MOSFET
典型關斷延遲時間:
57 ns
典型的開啟延遲時間:
12 ns
第 # 部分別名:
IPL60R065C7 SP001385034
Tags
IPL60R065, IPL60R06, IPL60R0, IPL60, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 0.065 Ohm 68 nC CoolMOS™ Power Mosfet -ThinPak 8x8
***ark
Mosfet, N-Ch, 600V, 29A, 180W, Vson; Transistor Polarity:n Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.056Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
型號 製造商 描述 庫存 價格
IPL60R065C7AUMA1
DISTI # 33932159
Infineon Technologies AGTrans MOSFET N-CH 600V 29A 4-Pin VSON EP T/R3000
  • 3000:$3.7826
IPL60R065C7AUMA1
DISTI # IPL60R065C7AUMA1-ND
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$4.1223
IPL60R065C7AUMA1
DISTI # IPL60R065C7AUMA1
Infineon Technologies AGTrans MOSFET N 650V 29A 4-Pin VSON T/R - Tape and Reel (Alt: IPL60R065C7AUMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$3.7900
  • 18000:$3.8900
  • 12000:$3.9900
  • 6000:$4.0900
  • 3000:$4.2900
IPL60R065C7AUMA1
DISTI # SP001385034
Infineon Technologies AGTrans MOSFET N 650V 29A 4-Pin VSON T/R (Alt: SP001385034)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€3.2900
  • 18000:€3.4900
  • 12000:€3.7900
  • 6000:€3.9900
  • 3000:€4.0900
IPL60R065C7AUMA1
DISTI # SP001385034
Infineon Technologies AGTrans MOSFET N 650V 29A 4-Pin VSON T/R (Alt: SP001385034)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€3.4900
  • 18000:€3.5900
  • 12000:€3.7900
  • 6000:€3.8900
  • 3000:€3.9900
IPL60R065C7AUMA1
DISTI # 84AC6832
Infineon Technologies AGMOSFET, N-CH, 600V, 29A, 180W, VSON,Transistor Polarity:N Channel,Continuous Drain Current Id:29A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.056ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes0
  • 1000:$4.1100
  • 500:$4.7300
  • 250:$5.1800
  • 100:$5.4200
  • 50:$5.8400
  • 25:$6.2500
  • 10:$6.5500
  • 1:$7.2500
IPL60R065C7AUMA1
DISTI # 726-IPL60R065C7AUMA1
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
0
  • 1:$7.1800
  • 10:$6.4900
  • 25:$6.1900
  • 100:$5.3700
  • 250:$5.1300
  • 500:$4.6800
  • 1000:$4.0700
  • 3000:$3.9200
IPL60R065C7AUMA1
DISTI # 2983362
Infineon Technologies AGMOSFET, N-CH, 600V, 29A, 180W, VSON
RoHS: Compliant
0
  • 1:$6.0500
IPL60R065C7AUMA1
DISTI # 2983362
Infineon Technologies AGMOSFET, N-CH, 600V, 29A, 180W, VSON2960
  • 10:£5.3600
  • 5:£6.2100
  • 1:£6.8000
圖片 型號 描述
IPL60R065P7AUMA1

Mfr.#: IPL60R065P7AUMA1

OMO.#: OMO-IPL60R065P7AUMA1

MOSFET HIGH POWER_NEW
IPL60R060CFD7AUMA1

Mfr.#: IPL60R060CFD7AUMA1

OMO.#: OMO-IPL60R060CFD7AUMA1

MOSFET HIGH POWER_NEW
IPL60R065C7AUMA1

Mfr.#: IPL60R065C7AUMA1

OMO.#: OMO-IPL60R065C7AUMA1

MOSFET HIGH POWER_NEW
IPL60R060CFD7AUMA1

Mfr.#: IPL60R060CFD7AUMA1

OMO.#: OMO-IPL60R060CFD7AUMA1-INFINEON-TECHNOLOGIES

HIGH POWER_NEW
IPL60R065P7AUMA1

Mfr.#: IPL60R065P7AUMA1

OMO.#: OMO-IPL60R065P7AUMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 4VSON
IPL60R065P7    NPI

Mfr.#: IPL60R065P7 NPI

OMO.#: OMO-IPL60R065P7-NPI-1190

N-CH 600V 41A 65mOhm ThinPAK8x8
IPL60R065C7

Mfr.#: IPL60R065C7

OMO.#: OMO-IPL60R065C7-1190

全新原裝
IPL60R065C7AUMA1

Mfr.#: IPL60R065C7AUMA1

OMO.#: OMO-IPL60R065C7AUMA1-INFINEON-TECHNOLOGIES

MOSFET HIGH POWER_NEW
IPL60R065P7

Mfr.#: IPL60R065P7

OMO.#: OMO-IPL60R065P7-1190

Trans MOSFET N-CH 650V 41A 4-Pin VSON T/R (Alt: IPL60R065P7)
可用性
庫存:
Available
訂購:
1985
輸入數量:
IPL60R065C7AUMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$7.18
US$7.18
10
US$6.49
US$64.90
25
US$6.19
US$154.75
100
US$5.37
US$537.00
250
US$5.13
US$1 282.50
500
US$4.68
US$2 340.00
1000
US$4.07
US$4 070.00
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