IPB014N06NATMA1

IPB014N06NATMA1
Mfr. #:
IPB014N06NATMA1
製造商:
Infineon Technologies
描述:
IGBT Transistors MOSFET N-Ch 60V 180A D2PAK-6
生命週期:
製造商新產品
數據表:
IPB014N06NATMA1 數據表
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IPB014N06NATMA1 更多信息
產品屬性
屬性值
製造商
英飛凌科技
產品分類
晶體管 - FET、MOSFET - 單
系列
IPB014N06
打包
捲軸
部分別名
IPB014N06N IPB014N06NXT SP000917408
單位重量
0.056438 oz
安裝方式
貼片/貼片
商品名
優化MOS
包裝盒
TO-263-7
技術
通道數
1 Channel
配置
單身的
晶體管型
1 N-Channel
鈀功耗
214 W
最高工作溫度
+ 175 C
最低工作溫度
- 55 C
秋季時間
14 ns
上升時間
18 ns
VGS-柵極-源極-電壓
20 V
Id 連續漏極電流
180 A
Vds-漏-源-擊穿電壓
60 V
VGS-th-Gate-Source-Threshold-Voltage
2.8 V
Rds-On-Drain-Source-Resistance
1.4 mOhms
晶體管極性
N通道
典型關斷延遲時間
47 ns
典型開啟延遲時間
22 ns
Qg-門電荷
106 nC
正向跨導最小值
230 S
Tags
IPB014, IPB01, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 4, N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK Infineon IPB014N06NATMA1
***ure Electronics
Single N-Channel 60 V 1.4 mOhm 106 nC OptiMOS™ Power Mosfet - D2PAK-7
***ical
Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) TO-263
***et Europe
Trans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R
***an P&S
60V,1.4mΩ,180A,N-Channel Power MOSFET
***i-Key
MOSFET N-CH 60V 34A TO263-7
***ronik
N-CH 60V 180A 1,4mOhm TO263-7
***ark
Mosfet, N-Ch, 60V, 180A, To-263-7; Transistor Polarity:n Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0012Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 180A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:214W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, N-CH, 60V, 180A, TO-263-7; Polarità Transistor:Canale N; Corrente Continua di Drain Id:180A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0012ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:214W; Modello Case Transistor:TO-263; No. di Pin:7Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
型號 製造商 描述 庫存 價格
IPB014N06NATMA1
DISTI # V72:2272_06377743
Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
961
  • 500:$2.2330
  • 250:$2.4070
  • 100:$2.6440
  • 25:$2.7320
  • 10:$3.0360
  • 1:$3.9314
IPB014N06NATMA1
DISTI # V36:1790_06377743
Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
0
  • 1000:$1.5890
IPB014N06NATMA1
DISTI # IPB014N06NATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 60V 34A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
90In Stock
  • 500:$2.4484
  • 100:$2.8761
  • 10:$3.5100
  • 1:$3.9100
IPB014N06NATMA1
DISTI # IPB014N06NATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 34A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
90In Stock
  • 500:$2.4484
  • 100:$2.8761
  • 10:$3.5100
  • 1:$3.9100
IPB014N06NATMA1
DISTI # IPB014N06NATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 34A TO263-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 5000:$1.8330
  • 2000:$1.9045
  • 1000:$2.0048
IPB014N06NATMA1
DISTI # 32011835
Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
1000
  • 1000:$1.6558
IPB014N06NATMA1
DISTI # 31274162
Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
961
  • 500:$2.2330
  • 250:$2.4070
  • 100:$2.6440
  • 25:$2.7320
  • 10:$3.0360
  • 5:$3.9314
IPB014N06NATMA1
DISTI # 32334089
Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
336
  • 10000:$1.3163
  • 4000:$1.3761
  • 1000:$1.4751
IPB014N06NATMA1
DISTI # IPB014N06NATMA1
Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R - Bulk (Alt: IPB014N06NATMA1)
RoHS: Compliant
Min Qty: 248
Container: Bulk
Americas - 0
  • 2480:$1.1900
  • 744:$1.2900
  • 1240:$1.2900
  • 248:$1.3900
  • 496:$1.3900
IPB014N06NATMA1
DISTI # IPB014N06NATMA1
Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB014N06NATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$1.2900
  • 4000:$1.3900
  • 6000:$1.3900
  • 1000:$1.4900
  • 2000:$1.4900
IPB014N06NATMA1
DISTI # SP000917408
Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R (Alt: SP000917408)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 10000:€1.1900
  • 6000:€1.2900
  • 4000:€1.3900
  • 2000:€1.4900
  • 1000:€1.7900
IPB014N06NATMA1
DISTI # 97Y1819
Infineon Technologies AGMOSFET, N-CH, 60V, 180A, TO-263-7,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes59
  • 500:$2.2800
  • 250:$2.5500
  • 100:$2.6900
  • 50:$2.8200
  • 25:$2.9600
  • 10:$3.0900
  • 1:$3.6500
IPB014N06N
DISTI # 726-IPB014N06N
Infineon Technologies AGMOSFET N-Ch 60V 180A D2PAK-6
RoHS: Compliant
334
  • 1:$3.6100
  • 10:$3.0600
  • 100:$2.6600
  • 250:$2.5200
  • 500:$2.2600
  • 1000:$1.9100
  • 2000:$1.8100
IPB014N06NATMA1
DISTI # 726-IPB014N06NATMA1
Infineon Technologies AGMOSFET N-Ch 60V 180A D2PAK-6
RoHS: Compliant
104
  • 1:$3.6100
  • 10:$3.0600
  • 100:$2.6600
  • 250:$2.5200
  • 500:$2.2600
  • 1000:$1.9100
  • 2000:$1.8100
IPB014N06NATMA1Infineon Technologies AGPower Field-Effect Transistor, 34A I(D), 60V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
RoHS: Compliant
8
  • 1000:$1.3300
  • 500:$1.4000
  • 100:$1.4600
  • 25:$1.5200
  • 1:$1.6400
IPB014N06NATMA1
DISTI # 9062921P
Infineon Technologies AGMOSFET N-CHANNEL 60V 180A OPTIMOS TO263, RL296
  • 200:£1.7380
  • 80:£1.8750
  • 40:£2.0080
  • 8:£2.1830
IPB014N06NATMA1
DISTI # 2617426
Infineon Technologies AGMOSFET, N-CH, 60V, 180A, TO-263-7
RoHS: Compliant
59
  • 500:$3.9200
  • 100:$4.8400
  • 10:$5.9000
  • 1:$6.6100
IPB014N06NATMA1
DISTI # 2617426
Infineon Technologies AGMOSFET, N-CH, 60V, 180A, TO-263-71277
  • 500:£1.7400
  • 250:£1.9400
  • 100:£2.0500
  • 10:£2.3500
  • 1:£3.1200
圖片 型號 描述
IPB014N06N

Mfr.#: IPB014N06N

OMO.#: OMO-IPB014N06N

MOSFET N-Ch 60V 180A D2PAK-6
IPB014N06NATMA1

Mfr.#: IPB014N06NATMA1

OMO.#: OMO-IPB014N06NATMA1

MOSFET N-Ch 60V 180A D2PAK-6
IPB014N06N

Mfr.#: IPB014N06N

OMO.#: OMO-IPB014N06N-1190

MOSFET N-Ch 60V 180A D2PAK-6
IPB014N06N3G

Mfr.#: IPB014N06N3G

OMO.#: OMO-IPB014N06N3G-1190

全新原裝
IPB014N06NTR

Mfr.#: IPB014N06NTR

OMO.#: OMO-IPB014N06NTR-1190

全新原裝
IPB014N06NATMA1

Mfr.#: IPB014N06NATMA1

OMO.#: OMO-IPB014N06NATMA1-INFINEON-TECHNOLOGIES

IGBT Transistors MOSFET N-Ch 60V 180A D2PAK-6
可用性
庫存:
Available
訂購:
5500
輸入數量:
IPB014N06NATMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$1.78
US$1.78
10
US$1.70
US$16.96
100
US$1.61
US$160.65
500
US$1.52
US$758.65
1000
US$1.43
US$1 428.00
從...開始
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