MSC025SMA120J

Mfr. #:: MSC025SMA120J
製造商:: Microchip / Microsemi
描述:: MOSFET UNRLS, FG, SIC MOSFET, SOT-227
生命週期:: 製造商新產品
數據表:: MSC025SMA120J 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: MSC025SMA120J 更多信息

產品屬性
屬性值

製造商：: 微芯片

產品分類：: MOSFET

RoHS：: Y

技術：: 碳化矽

安裝方式：: 底盤安裝

包裝/案例：: SOT-227-4

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 1.2 kV

Rds On - 漏源電阻：: 31 mOhms

最低工作溫度：: - 55 C

最高工作溫度：: + 175 C

打包：: 管子

品牌：: 微芯片/Microsemi

產品類別：: MOSFET

出廠包裝數量：: 1

子類別：: MOSFET

Tags: MSC025, MSC02, MSC0, MSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MSC025SMA120J 更多信息

SiC Schottky Barrier Diodes: Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.

Next Generation SiC MOSFETs: Microsemi / Microchip Next Generation Silicon Carbide (SiC) MOSFETs provide good dynamic and thermal performance compared to the Silicon (Si) power MOSFETs. These MOSFETs come with low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs are capable of stable operation at 175°C high junction temperature. These MOSFETs provide high-efficiency with low switching losses. The SiC MOSFETs does not require any freewheeling diodes and reduces the system cost. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply as well as distribution.

Market price

型號	製造商	描述	庫存	價格
MSC025SMA120J DISTI # V36:1790_21671870	Microsemi Corporation	MSC025SMA120J	0	10000:$55.2100 5000:$55.2200 1000:$57.9500 100:$64.8000 10:$66.0800
MSC025SMA120J DISTI # 691-MSC025SMA120J-ND	Microsemi Corporation	GEN2 SIC MOSFET 1200V 25MOHM SOT Min Qty: 1 Container: Tube	20In Stock	100:$56.5807 25:$61.1236 10:$62.7760 1:$66.0800
MSC025SMA120J DISTI # MSC025SMA120J	Microchip Technology Inc	Silicon Carbide Power MOSFET N-Channel 1200V 77A SOT-227 - Rail/Tube (Alt: MSC025SMA120J) RoHS: Compliant Min Qty: 10 Container: Tube	Americas - 0	100:$51.2900 50:$52.0900 30:$53.7900 20:$55.5900 10:$57.4900
MSC025SMA120J DISTI # 494-MSC025SMA120J	Microchip Technology Inc	MOSFET UNRLS, FG, SIC MOSFET, SOT-227 RoHS: Compliant	21	1:$86.0800 2:$83.4900 5:$82.4700 10:$80.8700 25:$78.2500 50:$76.5200 100:$72.4600
MSC025SMA120J DISTI # MSC025SMA120J	Microsemi Corporation	SILICON CARBIDE MOSFETS RoHS: Compliant	250	1:$63.0500 10:$54.1600 50:$52.7900 100:$52.1300

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