OMO ElectronicOMO Electronic
Expand menu
您好，登錄我的帳戶
0 購物車

SIA910EDJ-T1-GE3

SIA910EDJ-T1-GE3
Mfr. #:
SIA910EDJ-T1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 12V Vds 8V Vgs PowerPAK SC-70
生命週期:
製造商新產品
數據表:
SIA910EDJ-T1-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIA910EDJ-T1-GE3 DatasheetSIA910EDJ-T1-GE3 Datasheet (P4-P6)SIA910EDJ-T1-GE3 Datasheet (P7-P9)
ECAD Model:
更多信息:
SIA910EDJ-T1-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
PowerPAK-SC70-6
通道數：
2 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
12 V
Id - 連續漏極電流：
4.5 A
Rds On - 漏源電阻：
28 mOhms
Vgs th - 柵源閾值電壓：
400 mV
Vgs - 柵源電壓：
8 V
Qg - 門電荷：
16 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
7.8 W
配置：
雙重的
頻道模式：
增強
商品名：
TrenchFET、PowerPAK
打包：
捲軸
高度：
0.75 mm
長度：
2.05 mm
系列：
新航
晶體管類型：
2 N-Channel
寬度：
2.05 mm
品牌：
威世 / Siliconix
正向跨導 - 最小值：
23 S
秋季時間：
12 ns
產品類別：
MOSFET
上升時間：
12 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
25 ns
典型的開啟延遲時間：
10 ns
第 # 部分別名：
SIA910EDJ-GE3
單位重量：
0.000988 oz
Tags
SIA910, SIA91, SIA9, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 12 V 28 mOhm SMT TrenchFET Power Mosfet - PowerPAK SC-70-6L
***ical
Trans MOSFET N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R
***ronik
N+N-MOS+ESD 4,5A 12V PP-SC70-6
***nell
MOSFET, DUAL N CH, 12V, 4.5A, POWERPAK; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:7.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; MSL:-
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
型號 製造商 描述 庫存 價格
SIA910EDJ-T1-GE3
DISTI # SIA910EDJ-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 12V 4.5A SC-70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.2392
SIA910EDJ-T1-GE3
DISTI # SIA910EDJ-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 12V 4.5A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.2719
  • 500:$0.3399
  • 100:$0.4589
  • 10:$0.5950
  • 1:$0.6800
SIA910EDJ-T1-GE3
DISTI # SIA910EDJ-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 12V 4.5A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.2719
  • 500:$0.3399
  • 100:$0.4589
  • 10:$0.5950
  • 1:$0.6800
SIA910EDJ-T1-GE3
DISTI # SIA910EDJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA910EDJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.4369
  • 6000:€0.2979
  • 12000:€0.2559
  • 18000:€0.2369
  • 30000:€0.2199
SIA910EDJ-T1-GE3
DISTI # SIA910EDJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA910EDJ-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.2029
  • 6000:$0.1969
  • 12000:$0.1889
  • 18000:$0.1839
  • 30000:$0.1789
SIA910EDJ-T1-GE3
DISTI # 05W6927		Vishay IntertechnologiesTrans MOSFET N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R - Product that comes on tape, but is not reeled (Alt: 05W6927)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$0.2500
SIA910EDJ-T1-GE3
DISTI # 97W2599		Vishay IntertechnologiesDual MOSFET, Dual N Channel, 4.5 A, 12 V, 0.023 ohm, 4.5 V, 400 mV , RoHS Compliant: Yes0
  • 1:$0.6000
  • 25:$0.4790
  • 50:$0.4220
  • 100:$0.3640
  • 250:$0.3320
  • 500:$0.3000
  • 1000:$0.2500
SIA910EDJ-T1-GE3
DISTI # 05W6927		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 12V, 4.5A, POWERPAK SC70-6,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:6Pins , RoHS Compliant: Yes0
  • 1:$0.1670
  • 25:$0.1670
  • 50:$0.1670
  • 100:$0.1670
  • 250:$0.1670
  • 500:$0.1670
  • 1000:$0.1670
SIA910EDJ-T1-GE3.
DISTI # 30AC0111		Vishay IntertechnologiesDUAL N-CHANNEL 12-V (D-S) MOSFET , ROHS COMPLIANT: NO0
  • 1:$0.2500
  • 3000:$0.2500
SIA910EDJ-T1-GE3
DISTI # 70459579		Vishay Siliconix12V 4.5A/4.5A N-CH DUAL MOSFET
RoHS: Compliant		0
  • 3000:$0.6670
  • 6000:$0.5120
SIA910EDJ-T1-GE3
DISTI # 781-SIA910EDJ-T1-GE3		Vishay IntertechnologiesMOSFET 12V Vds 8V Vgs PowerPAK SC-70
RoHS: Compliant		0
  • 1:$0.6000
  • 10:$0.4790
  • 100:$0.3640
  • 500:$0.3000
  • 1000:$0.2500
SIA910EDJ-T1-GE3
DISTI # 2335391		Vishay IntertechnologiesMOSFET, DUAL N CH, 12V, 4.5A, POWERPAK
RoHS: Compliant		0
  • 5:£0.4180
  • 25:£0.3920
  • 100:£0.2810
  • 250:£0.2570
  • 500:£0.2320
SIA910EDJ-T1-GE3
DISTI # 2335391		Vishay IntertechnologiesMOSFET, DUAL N CH, 12V, 4.5A, POWERPAK
RoHS: Compliant		0
  • 1:$0.9500
  • 10:$0.7590
  • 100:$0.5770
  • 500:$0.4750
  • 1000:$0.3960
  • 3000:$0.3960
SIA910EDJ-T1-GE3Vishay IntertechnologiesMOSFET 12V Vds 8V Vgs PowerPAK SC-70
RoHS: Compliant		Americas - Stock
    圖片 型號 描述
    TPS3106K33DBVR

    Mfr.#: TPS3106K33DBVR

    OMO.#: OMO-TPS3106K33DBVR

    		 Supervisory Circuits Current/Supply-Volt Supervisory
    BQ25600DYFFT

    Mfr.#: BQ25600DYFFT

    OMO.#: OMO-BQ25600DYFFT

    		 Battery Management BQ25600DYFF
    TPS27081ADDCR

    Mfr.#: TPS27081ADDCR

    OMO.#: OMO-TPS27081ADDCR

    		 Power Switch ICs - Power Distribution 1.2-8V, 3 PFT Hi Sd Ld Swtch w/ Lvl Shft
    BMI088

    Mfr.#: BMI088

    OMO.#: OMO-BMI088

    		 IMUs - Inertial Measurement Units High Performance Intertial Measurement Unit (IMU) for Drones and Robotics
    1521-00002

    Mfr.#: 1521-00002

    OMO.#: OMO-1521-00002

    		 RF Connectors / Coaxial Connectors 2.92mm F Edge Launch Connector, 4 Legs
    RC0603FR-074K7L

    Mfr.#: RC0603FR-074K7L

    OMO.#: OMO-RC0603FR-074K7L

    		 Thick Film Resistors - SMD 4.7K OHM 1%
    TLIN2029DRBRQ1

    Mfr.#: TLIN2029DRBRQ1

    OMO.#: OMO-TLIN2029DRBRQ1

    		 LIN Transceivers Fault Protected Local Interconnect Network (LIN) Transceiver With Dominant State Timeout 8-SON -40 to 125
    1521-00002

    Mfr.#: 1521-00002

    OMO.#: OMO-1521-00002-AMPHENOL-SV-MICROWAVE

    		 2.92mm Female PCB Edge Launch, 4 Legs
    TPS3106K33DBVR

    Mfr.#: TPS3106K33DBVR

    OMO.#: OMO-TPS3106K33DBVR-TEXAS-INSTRUMENTS

    		 Supervisory Circuits Current/Supply-Volt Supervisory
    TPS27081ADDCR

    Mfr.#: TPS27081ADDCR

    OMO.#: OMO-TPS27081ADDCR-TEXAS-INSTRUMENTS

    		 Power Switch ICs - Power Distribution 1.2-8V, 3 PFT Hi Sd Ld Swtch w/ Lvl Shft
    可用性
    庫存:
    29
    訂購:
    2012
    輸入數量:
    SIA910EDJ-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$0.59
    US$0.59
    10
    US$0.48
    US$4.78
    100
    US$0.36
    US$36.30
    500
    US$0.30
    US$150.00
    1000
    US$0.24
    US$240.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
    從...開始
    最新產品
    • SUM70101EL 100 V P-Channel MOSFET
      SUM70101EL 100 V P-Channel MOSFET
      Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
    • Compare SIA910EDJ-T1-GE3
      Compare SIA910EDJ-T1-GE3
      SIA910EDJT1GE3 vs SIA910EDJT1GE3CUTTAPE vs SIA911ADJT1GE3
    • SIRA20DP TrenchFET® Gen IV MOSFET
      SIRA20DP TrenchFET® Gen IV MOSFET
      Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
    • P-Channel MOSFETs
      P-Channel MOSFETs
      Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
    • SiP32452, SiP32453 Load Switch
      SiP32452, SiP32453 Load Switch
      Vishay's load switches have a low input logic control threshold and a fast turn on time.
    • PowerPAIR®
      PowerPAIR®
      Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
    More Newest Products
    Top