FFSP20120A

Mfr. #:: FFSP20120A
製造商:: ON Semiconductor
描述:: Schottky Diodes & Rectifiers 1200V 20A Silicon Carbide Schtky Diode
生命週期:: 製造商新產品
數據表:: FFSP20120A 數據表
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ECAD Model:
更多信息:: FFSP20120A 更多信息

產品屬性
屬性值

製造商: 仙童半導體

產品分類: 二極管、整流器 - 單

系列: -

產品: 肖特基碳化矽二極管

打包: 管子

安裝方式: 通孔

包裝盒: TO-220-2

技術: 碳化矽

安裝型: 通孔

供應商-設備-包: TO-220-2

配置: 單身的

速度: Fast Recovery = 200mA (Io)

二極管型: 碳化矽肖特基

電流反向洩漏-Vr: 200μA @ 1200V

電壓正向 Vf-Max-If: 1.75V @ 20A

電壓-直流-反向-Vr-Max: 1200V (1.2kV)

電流平均整流Io: 20A

反向恢復時間trr: -

電容-Vr-F: 1220pF @ 1V, 100KHz

工作溫度結: -55°C ~ 175°C

鈀功耗: 340 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

Vf-正向電壓: 1.45 V

Vr-反向電壓: 1.2 kV

Ir-反向電流: 200 uA

如果正向電流: 20 A

Vrrm 重複反向電壓: 1.2 kV

Ifsm-正向浪湧電流: 135 A

Tags: FFSP2, FFSP, FFS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FFSP20120A 更多信息

FFSP SiC Schottky Diodes: ON Semiconductor FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

1200V SiC Schottky Diodes: ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.

Wide Bandgap SiC Devices: ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

Silicon Carbide Schottky Diodes: ON Semiconductor Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost. ON Semiconductor offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.

Market price

型號	製造商	描述	庫存	價格
FFSP20120A DISTI # V99:2348_16116319	ON Semiconductor	Diode Schottky 1.2KV 20A Rail	240	1000:$6.0350 500:$6.4860 250:$7.3180 100:$7.6150 25:$8.4200 10:$8.9149 1:$9.6900
FFSP20120A DISTI # FFSP20120A-ND	ON Semiconductor	DIODE SCHOTTKY 1.2KV 20A TO220-2 RoHS: Compliant Min Qty: 1 Container: Tube	565In Stock	100:$8.5843 10:$10.3690 1:$11.4800
FFSP20120A DISTI # 25895795	ON Semiconductor	Diode Schottky 1.2KV 20A Rail	240	100:$7.6150 25:$8.4200 10:$8.9149 1:$9.6900
FFSP20120A DISTI # FFSP20120A	ON Semiconductor	1200V SiC SBD 20A - Rail/Tube (Alt: FFSP20120A) RoHS: Compliant Min Qty: 800 Container: Tube	Americas - 0	800:$5.9900 1600:$5.8900 3200:$5.7900 4800:$5.7900 8000:$5.5900
FFSP20120A DISTI # FFSP20120A	ON Semiconductor	1200V SiC SBD 20A (Alt: FFSP20120A) RoHS: Compliant Min Qty: 1	Europe - 0	1:€7.3900 10:€6.6900 25:€6.4900 50:€6.1900 100:€5.9900 500:€5.7900 1000:€5.3900
FFSP20120A DISTI # 512-FFSP20120A	ON Semiconductor	Schottky Diodes & Rectifiers 1200V 20A Silicon Carbide Schtky Diode RoHS: Compliant	242	1:$10.9300 10:$9.8800 25:$9.4200 100:$8.1800 250:$7.8100 500:$7.1200 1000:$6.2100
FFSP20120A DISTI # C1S541901575560	ON Semiconductor	Diode Schottky 1.2KV 20A 2-Pin(2+Tab) TO-220 Tube	240	100:$7.6160 25:$8.4210 10:$8.9160 1:$9.6910

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