SI4670DY-T1-GE3

SI4670DY-T1-GE3
Mfr. #:
SI4670DY-T1-GE3
製造商:
Vishay
描述:
RF Bipolar Transistors MOSFET Dual N-ChW/ Schottky 25V 23mohms @ 10V
生命週期:
製造商新產品
數據表:
SI4670DY-T1-GE3 數據表
交貨:
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ECAD Model:
更多信息:
SI4670DY-T1-GE3 更多信息
產品屬性
屬性值
製造商
威世矽
產品分類
FET - 陣列
系列
溝槽FETR
打包
Digi-ReelR 替代包裝
部分別名
SI4670DY-GE3
單位重量
0.006596 oz
安裝方式
貼片/貼片
包裝盒
8-SOIC (0.154", 3.90mm Width)
技術
工作溫度
-55°C ~ 150°C (TJ)
安裝型
表面貼裝
通道數
2 Channel
供應商-設備-包
8-SO
配置
雙路肖特基二極管
FET型
2 N-Channel (Dual)
最大功率
2.8W
晶體管型
2 N-Channel
漏源電壓 Vdss
25V
輸入電容-Ciss-Vds
680pF @ 13V
FET-Feature
邏輯電平門
Current-Continuous-Drain-Id-25°C
8A
Rds-On-Max-Id-Vgs
23 mOhm @ 7A, 10V
Vgs-th-Max-Id
2.2V @ 250μA
柵極電荷-Qg-Vgs
18nC @ 10V
鈀功耗
1.8 W
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
秋季時間
50 ns
上升時間
50 ns
VGS-柵極-源極-電壓
16 V
Id 連續漏極電流
7 A
Vds-漏-源-擊穿電壓
25 V
Rds-On-Drain-Source-Resistance
23 mOhms
晶體管極性
N通道
典型關斷延遲時間
20 ns
典型開啟延遲時間
15 ns
通道模式
增強
Tags
SI4670DY-T, SI4670D, SI4670, SI467, SI46, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 25V 7A 8-Pin SOIC N T/R
***i-Key
MOSFET 2N-CH 25V 8A 8-SOIC
***ark
Transistor; Continuous Drain Current, Id:8000mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.028ohm; Rds(on) Test Voltage, Vgs:16V; Threshold Voltage, Vgs Typ:2.2V; Power Dissipation, Pd:1.8W ;RoHS Compliant: Yes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
型號 製造商 描述 庫存 價格
SI4670DY-T1-GE3
DISTI # SI4670DY-T1-GE3TR-ND
Vishay SiliconixMOSFET 2N-CH 25V 8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.5236
SI4670DY-T1-GE3
DISTI # SI4670DY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 25V 7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4670DY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.4939
  • 5000:$0.4799
  • 10000:$0.4599
  • 15000:$0.4469
  • 25000:$0.4349
SI4670DY-T1-GE3
DISTI # 781-SI4670DY-T1-GE3
Vishay IntertechnologiesMOSFET 25V Vds 16V Vgs SO-8
RoHS: Compliant
0
  • 2500:$0.4760
  • 5000:$0.4530
  • 10000:$0.4360
圖片 型號 描述
SI4670DY-T1-E3

Mfr.#: SI4670DY-T1-E3

OMO.#: OMO-SI4670DY-T1-E3

MOSFET 25V Vds 16V Vgs SO-8
SI4670DY-T1-GE3

Mfr.#: SI4670DY-T1-GE3

OMO.#: OMO-SI4670DY-T1-GE3

MOSFET 25V Vds 16V Vgs SO-8
SI4670DY-T1-GE3

Mfr.#: SI4670DY-T1-GE3

OMO.#: OMO-SI4670DY-T1-GE3-VISHAY

RF Bipolar Transistors MOSFET Dual N-ChW/ Schottky 25V 23mohms @ 10V
SI4670DY-T1-E3

Mfr.#: SI4670DY-T1-E3

OMO.#: OMO-SI4670DY-T1-E3-VISHAY

RF Bipolar Transistors MOSFET 25V 8.0A 2.8W
SI4670DY

Mfr.#: SI4670DY

OMO.#: OMO-SI4670DY-1190

全新原裝
SI4670DY-T1-E3-S

Mfr.#: SI4670DY-T1-E3-S

OMO.#: OMO-SI4670DY-T1-E3-S-1190

全新原裝
SI4670DY-T1-E3..

Mfr.#: SI4670DY-T1-E3..

OMO.#: OMO-SI4670DY-T1-E3--1190

全新原裝
可用性
庫存:
Available
訂購:
5500
輸入數量:
SI4670DY-T1-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$0.65
US$0.65
10
US$0.62
US$6.20
100
US$0.59
US$58.71
500
US$0.55
US$277.25
1000
US$0.52
US$521.90
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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