FGM622S

Mfr. #:: FGM622S
製造商:: Sanken
描述:: Trans IGBT Chip N-CH 600V 25A 3-Pin(3+Tab) TO-3PF
生命週期:: 製造商新產品
數據表:: FGM622S 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商: 三墾

產品分類: IGBT - 單

系列: -

打包: 管子

包裝盒: TO-3P-3 Full Pack

輸入類型: 標準

安裝型: 表面貼裝

供應商-設備-包: TO-3PF-3

最大功率: 60W

反向恢復時間trr: -

電流收集器 Ic-Max: 25A

電壓收集器發射極擊穿最大值: 600V

IGBT型: -

電流收集器脈衝Icm: 75A

Vce-on-Max-Vge-Ic: 1.9V @ 15V, 25A

開關能源: -

柵極電荷: 40nC

Td-on-off-25°C: 50ns/200ns

測試條件: -

Tags: FGM62, FGM6, FGM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FGM622S 描述

***p One Stop: Trans IGBT Chip N-CH 600V 25A 3-Pin(3+Tab) TO-3PF

***i-Key: IGBT 600V 16A TO-3PF

***ical: Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2+Tab) D2PAK T/R

***icroelectronics: 14 A, 600 V short-circuit rugged IGBT

*** Source Electronics: IGBT 600V 25A 80W D2PAK / N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT

***icroelectronics SCT: Short-circuit rugged IGBT, D2PAK, Tape and Reel

***r Electronics: Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-263AB

***(Formerly Allied Electronics): IGBT, N-CHANNEL 600V 25A, D2PAK

***ser: IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT

*** Electronic Components: IGBT Transistors PowerMESH" IGBT

***nell: IGBT, SMD, 600V, 14A, D2-PAK; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: -; Transistor Case Style: TO-263; No. of Pins: 3Pins;

***ure Electronics: N Channel 600 V 25 A Surface Mount Very Fast PowerMESH IGBT - TO-252

***ical: Trans IGBT Chip N-CH 600V 25A 70000mW 3-Pin(2+Tab) DPAK T/R

***nell: IGBT, SINGLE, 600V, 25A, TO-252; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 70W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***ark: N CHANNEL IGBT, PowerMESH, 600V, 25A, DPAK, FULL REEL; Continuous Collector Current:25A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:70W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

*** Source Electronics: Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2+Tab) DPAK T/R / IGBT 600V 25A 80W DPAK

***ure Electronics: STGD14NC60K Series N-Channel 600 V 14 A Short Circuit PowerMESH IGBT - TO-252-3

***r Electronics: Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel

*** Electronic Components: IGBT Transistors N-channel MOSFET

***icroelectronics: New short circuit rugged "K" series

***ical: Trans IGBT Chip N-CH 600V 20A 72000mW 3-Pin(2+Tab) DPAK T/R

*** Electronics: ON SEMICONDUCTOR NGTB10N60R2DT4G IGBT Single Transistor, 20 A, 1.7 V, 72 W, 600 V, TO-252, 3 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel

***ment14 APAC: IGBT, SINGLE, 600V, 20A, TO-252-3

***nell: IGBT, SINGLE, 600V, 20A, TO-252-3; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 72W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ineon SCT: Copacked 600V IGBT in a D2-Pak package with a hyperfast 1-8 kHz diode, D2PAKCOPAK, RoHS

***ow.cn: Trans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(2+Tab) D2PAK Tube

***ineon: Target Applications: Air Conditioner; Dryer; Pump; Solar; UPS; Washing Machine

***ment14 APAC: IGBT, D2-PAK; Transistor Type:IGBT; DC Collector Current:31A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:17A; Fall Time Max:230ns; Package / Case:D2-PAK; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:120A; Rise Time:27ns; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:600V

***ical: Trans IGBT Chip N-CH 600V 30A 130000mW 3-Pin(2+Tab) D2PAK T/R

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.9pF 25volts C0G +/-0.5pF

***ineon SCT: Infineon's 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO263-3, RoHS

***ment14 APAC: IGBT,600V,15A,TO263; Transistor Type:IGBT; DC Collector Current:15A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:130W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Power Dissipation Max:130W

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

Market price

型號	製造商	描述	庫存	價格
FGM622S DISTI # 30592756	Sanken Electric Co Ltd	Trans IGBT Chip N-CH 600V 25A 3-Pin(3+Tab) TO-3PF RoHS: Compliant	1080	10:$2.4097 7:$3.8760
FGM622S DISTI # FGM622S-ND	Sanken Electric Co Ltd	IGBT 600V 16A TO-3PF RoHS: Compliant Min Qty: 1080 Container: Tube	Temporarily Out of Stock	1080:$2.7783
FGM622S DISTI # C1S721000047362	Sanken Electric Co Ltd	Trans IGBT Chip N-CH 600V 25A 3-Pin(3+Tab) TO-3PF	1080	10:$1.8900 1:$3.0400

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