IXFH12N90P

IXFH12N90P
Mfr. #:
IXFH12N90P
製造商:
Littelfuse
描述:
Darlington Transistors MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
生命週期:
製造商新產品
數據表:
IXFH12N90P 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IXFH12N90P 更多信息
產品屬性
屬性值
製造商
IXYS
產品分類
晶體管 - FET、MOSFET - 單
系列
IXFH12N90
打包
管子
單位重量
0.229281 oz
安裝方式
通孔
商品名
超場效應晶體管
包裝盒
TO-247-3
技術
通道數
1 Channel
配置
單身的
晶體管型
1 N-Channel
鈀功耗
380 W
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
秋季時間
68 ns
上升時間
34 ns
VGS-柵極-源極-電壓
30 V
Id 連續漏極電流
12 A
Vds-漏-源-擊穿電壓
900 V
VGS-th-Gate-Source-Threshold-Voltage
3.5 V to 6.5 V
Rds-On-Drain-Source-Resistance
900 mOhms
晶體管極性
N通道
典型關斷延遲時間
50 ns
典型開啟延遲時間
32 ns
Qg-門電荷
56 nC
正向跨導最小值
8.2 S
通道模式
增強
Tags
IXFH12N, IXFH12, IXFH1, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ment14 APAC
MOSFET,N CH,900V,12A,TO-247
***nell
MOSFET,N CH,900V,12A,TO-247; Transistor Polarity:N Channel; Current Id Max:12A; Drain Source Voltage Vds:900V; On State Resistance:900mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:30V; Power Dissipation:380W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3
900V Polar HiPerFET Power MOSFETs
IXYS 900V Polar HiPerFET™ Power MOSFETs are available with drain current ratings from 10.5A to 56A and combine the advantages derived from the IXYS Polar Technology platform and HiPerFET process to provide improved power efficiency and reliability in demanding high-voltage conversion systems that require bus voltage operation of up to 700V. IXYS 900V Polar HiPerFET Power MOSFETs are tailored to minimize on-state resistance while maintaining low gate charge, resulting in a substantial reduction in conduction and switching losses. These IXYS devices feature a fast intrinsic diode for low reverse recovery charge and improved turn-off dV/dt immunity. These high reliability Polar HiPerFET Power MOSFETs are ideal for use in a variety of applications, including switch-mode / resonant-mode power supplies, DC/DC converters, laser drivers, and more.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
型號 製造商 描述 庫存 價格
IXFH12N90P
DISTI # IXFH12N90P-ND
IXYS CorporationMOSFET N-CH 900V 12A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$6.1560
IXFH12N90P
DISTI # 83R9967
IXYS CorporationN CHANNEL POLAR POWER MOSFET, HiPerFET, 900V, 12A, TO247,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:900V,On Resistance Rds(on):0.9ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:3Pins RoHS Compliant: Yes30
  • 1:$8.7800
  • 10:$7.8500
  • 25:$6.8300
  • 50:$6.6900
  • 100:$6.4400
  • 250:$5.5000
  • 500:$5.2100
IXFH12N90P
DISTI # 747-IXFH12N90P
IXYS CorporationMOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
RoHS: Compliant
55
  • 1:$8.7800
  • 10:$7.8500
  • 25:$6.8300
  • 50:$6.6900
  • 100:$6.4400
  • 250:$5.5000
  • 500:$5.2100
  • 1000:$4.4000
IXFH12N90P
DISTI # 1829759
IXYS CorporationMOSFET,N CH,900V,12A,TO-247
RoHS: Compliant
30
  • 1:£7.5500
  • 5:£6.9700
  • 10:£5.0100
IXFH12N90P
DISTI # 1829759
IXYS CorporationMOSFET,N CH,900V,12A,TO-247
RoHS: Compliant
30
  • 1:$13.9000
  • 10:$12.4300
  • 25:$10.8100
  • 50:$10.5900
  • 100:$10.2000
  • 250:$8.7100
  • 500:$8.2500
  • 1000:$6.9700
圖片 型號 描述
IXFH140N10P

Mfr.#: IXFH140N10P

OMO.#: OMO-IXFH140N10P

MOSFET 140 Amps 100V 0.011 Rds
IXFH15N100P

Mfr.#: IXFH15N100P

OMO.#: OMO-IXFH15N100P

MOSFET 15 Amps 1000V 0.76 Rds
IXFH120N25X3

Mfr.#: IXFH120N25X3

OMO.#: OMO-IXFH120N25X3

MOSFET DISCMSFT NCHULTRJNCTN X3CLASS
IXFH120N25T

Mfr.#: IXFH120N25T

OMO.#: OMO-IXFH120N25T

MOSFET Trench HiperFETs Power MOSFETs
IXFH13N90P

Mfr.#: IXFH13N90P

OMO.#: OMO-IXFH13N90P-1190

全新原裝
IXFH120N15P

Mfr.#: IXFH120N15P

OMO.#: OMO-IXFH120N15P-IXYS-CORPORATION

Darlington Transistors MOSFET 120 Amps 150V 0.016 Rds
IXFH14N60P

Mfr.#: IXFH14N60P

OMO.#: OMO-IXFH14N60P-IXYS-CORPORATION

Darlington Transistors MOSFET 600V 14A
IXFH15N80Q

Mfr.#: IXFH15N80Q

OMO.#: OMO-IXFH15N80Q-IXYS-CORPORATION

MOSFET 800V 15A
IXFH13N80Q

Mfr.#: IXFH13N80Q

OMO.#: OMO-IXFH13N80Q-IXYS-CORPORATION

MOSFET 13 Amps 800V 0.8 Rds
IXFH150N17T2

Mfr.#: IXFH150N17T2

OMO.#: OMO-IXFH150N17T2-IXYS-CORPORATION

IGBT Transistors MOSFET 175V 150A
可用性
庫存:
Available
訂購:
4500
輸入數量:
IXFH12N90P的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$6.60
US$6.60
10
US$6.27
US$62.70
100
US$5.94
US$594.00
500
US$5.61
US$2 805.00
1000
US$5.28
US$5 280.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
從...開始
最新產品
Top