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FDMA86251

FDMA86251
Mfr. #:
FDMA86251
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET FET 150V 175.0 MOHM MLP22
生命週期:
製造商新產品
數據表:
FDMA86251 數據表
交貨:
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ECAD Model:
更多信息:
FDMA86251 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
MicroFET-6
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
150 V
Id - 連續漏極電流：
2.4 A
Rds On - 漏源電阻：
333 mOhms
Vgs th - 柵源閾值電壓：
2 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
4.1 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
2.4 W
配置：
單身的
頻道模式：
增強
商品名：
動力戰壕
打包：
捲軸
高度：
0.75 mm
長度：
2 mm
系列：
FDMA86251
晶體管類型：
1 N-Channel
寬度：
2 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
4.7 S
秋季時間：
2.3 ns
產品類別：
MOSFET
上升時間：
1.7 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
10 ns
典型的開啟延遲時間：
5.9 ns
單位重量：
0.001058 oz
Tags
FDMA86, FDMA8, FDMA, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel PowerTrench® MOSFET 150V, 2.4A, 175mΩ
***ark
MV5 150V/20V single n-channel powertrench MOSFET - 6LD,MLP,DUAL,NON-JEDEC,2MM SQUARE,SINGLE TIED DAP
***rchild Semiconductor
This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance.
***nell
MOSFET, N-CH, 150V, 2.4A, 2.4W, WDFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.4A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.148ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 2.4W; Transistor Case Style: WDFN; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
FDT86244 Series 150 V 128 mOhm N.Ch. SMT PowerTrench Mosfet - SOT-223-3
***emi
N-Channel Power Trench® MOSFET 150V, 2.8A, 128mΩ
***Yang
Trans MOSFET N-CH 150V 2.8A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
***nell
MOSFET, N CH, 150V, 2.8A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2.8A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.106ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.1V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:12A; Voltage Vgs th Max:4V
*** Source Electronics
Trans MOSFET N-CH 150V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 150V 2.6A SOT223
***ure Electronics
Single N-Channel 150 V 185 mOhm 12 nC HEXFET® Power Mosfet - SOT-223
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 150V,RDS(ON) 185 Milliohms,ID 2.6A,SOT-223,PD 2.8W,-55C
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
***roFlash
Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***nell
MOSFET, N, 150V, 2.6A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.6A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.185ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Powe
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.6 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 185 / Gate-Source Voltage V = 30 / Fall Time ns = 19 / Rise Time ns = 21 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 8.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2.8
***emi
N-Channel Shielded Gate Power Trench® MOSFET, 150 V, 2.3 A, 144 mΩ
*** Source Electronics
MOSFET N-CH 150V 2.3A 6SSOT / Trans MOSFET N-CH 150V 2.3A 6-Pin TSOT-23 T/R
***ure Electronics
N-Channel 150 V 2.3 A 144 mOhm SuperSOT-6 Mosfet
*** Stop Electro
Small Signal Field-Effect Transistor, 2.3A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
***emi
P-Channel QFET® MOSFET -150V, -3A, 1.5Ω
***ure Electronics
FDMC2523P Series -150 V -3 A 1.5 Ohm Surface Mount P-Channel QFET - MLP-8
***el Electronic
FDMC2523P P-Channel MOSFET, 1.8 A, 150 V QFET, 8-Pin MLP ON Semiconductor
***rchild Semiconductor
These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
***et Europe
Trans MOSFET P-CH 150V 2.8A 8-Pin PowerPAK 1212 T/R
***ark
P-Ch PowerPAK 1212-8 Cu wire 150V 1200mohm @ 10V
***el Electronic
MOSFET -150V 1.2ohm@-10V -2.8A P-Ch T-FET
***or
MOSFET P-CH 150V 2.8A PPAK1212-8
***enic
PowerPAK-1212-8 Pre-ordered Chips ROHS
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
型號 製造商 描述 庫存 價格
FDMA86251
DISTI # V72:2272_06337834		ON SemiconductorMV5 150V/20V SINGLE N-CHANNEL1930
  • 1000:$0.4084
  • 500:$0.5038
  • 250:$0.5392
  • 100:$0.5991
  • 25:$0.7000
  • 10:$0.8556
  • 1:$0.9912
FDMA86251
DISTI # V36:1790_06337834		ON SemiconductorMV5 150V/20V SINGLE N-CHANNEL0
  • 3000000:$0.3259
  • 1500000:$0.3262
  • 300000:$0.3536
  • 30000:$0.4030
  • 3000:$0.4113
FDMA86251
DISTI # FDMA86251CT-ND		ON SemiconductorMOSFET N-CH 150V 2.4A 6-MLP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		31718In Stock
  • 1000:$0.4539
  • 500:$0.5749
  • 100:$0.6960
  • 10:$0.8930
  • 1:$1.0000
FDMA86251
DISTI # FDMA86251DKR-ND		ON SemiconductorMOSFET N-CH 150V 2.4A 6-MLP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		31718In Stock
  • 1000:$0.4539
  • 500:$0.5749
  • 100:$0.6960
  • 10:$0.8930
  • 1:$1.0000
FDMA86251
DISTI # FDMA86251TR-ND		ON SemiconductorMOSFET N-CH 150V 2.4A 6-MLP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		30000In Stock
  • 15000:$0.3760
  • 6000:$0.3907
  • 3000:$0.4113
FDMA86251
DISTI # 29421027		ON SemiconductorMV5 150V/20V SINGLE N-CHANNEL1930
  • 18:$0.9912
FDMA86251
DISTI # FDMA86251		ON SemiconductorTrans MOSFET N-CH 150V 2.4A 6-Pin MLP T/R (Alt: FDMA86251)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.3469
  • 18000:€0.3739
  • 12000:€0.4049
  • 6000:€0.4419
  • 3000:€0.5399
FDMA86251
DISTI # FDMA86251		ON SemiconductorTrans MOSFET N-CH 150V 2.4A 6-Pin MLP T/R - Tape and Reel (Alt: FDMA86251)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.3449
  • 18000:$0.3539
  • 12000:$0.3579
  • 6000:$0.3629
  • 3000:$0.3649
FDMA86251
DISTI # 99AC9165		ON SemiconductorMOSFET, N-CH, 150V, 2.4A, 2.4W, WDFN,Transistor Polarity:N Channel,Continuous Drain Current Id:2.4A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.148ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes2465
  • 1000:$0.4240
  • 500:$0.5370
  • 250:$0.5730
  • 100:$0.6080
  • 50:$0.6690
  • 25:$0.7310
  • 10:$0.7920
  • 1:$0.9190
FDMA86251
DISTI # 49Y8332		ON SemiconductorFET 150V 170.0 MOHM MLP22 / REEL0
  • 1000:$0.5380
  • 500:$0.5830
  • 250:$0.6450
  • 100:$0.7120
  • 1:$0.9160
FDMA86251
DISTI # 512-FDMA86251		ON SemiconductorMOSFET FET 150V 175.0 MOHM MLP22
RoHS: Compliant		45668
  • 1:$0.9100
  • 10:$0.7840
  • 100:$0.6020
  • 500:$0.5320
  • 1000:$0.4200
  • 3000:$0.3730
  • 9000:$0.3590
FDMA86251
DISTI # 2992327		ON SemiconductorMOSFET, N-CH, 150V, 2.4A, 2.4W, WDFN
RoHS: Compliant		2465
  • 1000:$0.5290
  • 500:$0.5950
  • 250:$0.6580
  • 100:$0.7210
  • 25:$1.1000
  • 5:$1.1900
FDMA86251
DISTI # 2992327		ON SemiconductorMOSFET, N-CH, 150V, 2.4A, 2.4W, WDFN2465
  • 500:£0.3860
  • 250:£0.4120
  • 100:£0.4370
  • 10:£0.6190
  • 1:£0.7540
圖片 型號 描述
FDT86246L

Mfr.#: FDT86246L

OMO.#: OMO-FDT86246L

 MOSFET 150V 2A N-Channel Power Trench MOSFET
STM32F769NIH6

Mfr.#: STM32F769NIH6

OMO.#: OMO-STM32F769NIH6

 ARM Microcontrollers - MCU 16/32-BITS MICROS
EMIF06-MSD02N16

Mfr.#: EMIF06-MSD02N16

OMO.#: OMO-EMIF06-MSD02N16

 EMI Filter Circuits 6-line Micro QFN Lvl 4 20pF 50MHz
CSTNE8M00G550000R0

Mfr.#: CSTNE8M00G550000R0

OMO.#: OMO-CSTNE8M00G550000R0

 Resonators 8.0000MHz 33pF SMD CHP Resntr
LQG15HZ15NJ02D

Mfr.#: LQG15HZ15NJ02D

OMO.#: OMO-LQG15HZ15NJ02D-MURATA-ELECTRONICS

 Inductor RF Chip Multi-Layer 15nH 5% 100MHz 8Q-Factor Air 450mA 320mOhm DCR 0402 Automotive T/R
STM32F769NIH6

Mfr.#: STM32F769NIH6

OMO.#: OMO-STM32F769NIH6-STMICROELECTRONICS

 IC MCU 32BIT 2MB FLASH 216TFBGA STM32F7
EMIF06-MSD02N16

Mfr.#: EMIF06-MSD02N16

OMO.#: OMO-EMIF06-MSD02N16-STMICROELECTRONICS

 FILTER RC(PI) 45 OHM/20PF SMD
NX3225SA-16.000000MHZ-T1

Mfr.#: NX3225SA-16.000000MHZ-T1

OMO.#: OMO-NX3225SA-16-000000MHZ-T1-NDK

 CRYSTAL 16.0000MHZ 10PF SMD
CSTNE8M00G550000R0

Mfr.#: CSTNE8M00G550000R0

OMO.#: OMO-CSTNE8M00G550000R0-MURATA-ELECTRONICS

 Piezoelectric Ceramic Resonator 8.0000MHZ 33PF SMD
C2012C0G2A333J125AE

Mfr.#: C2012C0G2A333J125AE

OMO.#: OMO-C2012C0G2A333J125AE-TDK

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 100V 33nF 5% SOFT 1.25mm
可用性
庫存:
44
訂購:
2027
輸入數量:
FDMA86251的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$0.91
US$0.91
10
US$0.78
US$7.84
100
US$0.60
US$60.20
500
US$0.53
US$266.00
1000
US$0.42
US$420.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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