SI4346DY-T1-E3

Mfr. #:: SI4346DY-T1-E3
製造商:: Vishay
描述:: MOSFET N-CH 30V 5.9A 8-SOIC
生命週期:: 製造商新產品
數據表:: SI4346DY-T1-E3 數據表
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HTML Datasheet:: SI4346DY-T1-E3 Datasheet SI4346DY-T1-E3 Datasheet (P4-P6)SI4346DY-T1-E3 Datasheet (P7-P8)
ECAD Model:

產品屬性
屬性值

製造商: 威世矽

產品分類: FET - 單

系列: 溝槽FETR

打包: Digi-ReelR 替代包裝

部分別名: SI4346DY-E3

單位重量: 0.006596 oz

安裝方式: 貼片/貼片

包裝盒: 8-SOIC (0.154", 3.90mm Width)

技術: 矽

工作溫度: -55°C ~ 150°C (TJ)

安裝型: 表面貼裝

通道數: 1 Channel

供應商-設備-包: 8-SO

配置: 單身的

FET型: MOSFET N 溝道，金屬氧化物

最大功率: 1.31W

晶體管型: 1 N-Channel

漏源電壓 Vdss: 30V

輸入電容-Ciss-Vds: -

FET-Feature: 標準

Current-Continuous-Drain-Id-25°C: 5.9A (Ta)

Rds-On-Max-Id-Vgs: 23 mOhm @ 8A, 10V

Vgs-th-Max-Id: 2V @ 250μA

柵極電荷-Qg-Vgs: 10nC @ 4.5V

鈀功耗: 1.31 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 11 ns

上升時間: 11 ns

VGS-柵極-源極-電壓: 12 V

Id 連續漏極電流: 5.9 A

Vds-漏-源-擊穿電壓: 30 V

Rds-On-Drain-Source-Resistance: 23 mOhms

晶體管極性: N通道

典型關斷延遲時間: 40 ns

典型開啟延遲時間: 9 ns

通道模式: 增強

Tags: SI4346D, SI4346, SI434, SI43, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4346DY-T1-E3 描述

***ure Electronics: Single N-Channel 30 V 0.023 Ohms Surface Mount Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R

***ment14 APAC: MOSFET,N CH,30V,5.9A,8-SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):19mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:5.9A; Power Dissipation Pd:1.31W; Voltage Vgs Max:12V

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.9A; On Resistance Rds(On):0.019Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:-Rohs Compliant: No

Market price

型號	製造商	描述	庫存	價格
SI4346DY-T1-E3 DISTI # V72:2272_09216464	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R RoHS: Compliant	1125	75000:$0.3116 30000:$0.3146 15000:$0.3175 6000:$0.3205 3000:$0.3234 1000:$0.3264 500:$0.3585 250:$0.3923 100:$0.4267 50:$0.4351 25:$0.4834 10:$0.4928 1:$0.5231
SI4346DY-T1-E3 DISTI # SI4346DY-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 5.9A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1591In Stock	1000:$0.3577 500:$0.4423 100:$0.5903 10:$0.7590 1:$0.8700
SI4346DY-T1-E3 DISTI # SI4346DY-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 5.9A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1591In Stock	1000:$0.3577 500:$0.4423 100:$0.5903 10:$0.7590 1:$0.8700
SI4346DY-T1-E3 DISTI # SI4346DY-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 5.9A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
SI4346DY-T1-E3 DISTI # 25790090	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R RoHS: Compliant	1125	15000:$0.3413 6000:$0.3445 3000:$0.3477 1000:$0.3509 500:$0.3854 250:$0.4217 100:$0.4587 50:$0.4677 25:$0.5197 19:$0.5298
SI4346DY-T1-E3 DISTI # 19257946	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R RoHS: Compliant	995	167:$0.3750
SI4346DY-T1-E3 DISTI # 57J5650	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 8A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:2V,No. of Pins:8Pins RoHS Compliant: Yes	995	1:$0.3000 10:$0.3000 25:$0.3000 50:$0.3000 100:$0.3000 250:$0.3000 500:$0.3000
SI4346DY-T1-E3. DISTI # 30AC0153	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:5.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.31W,No. of Pins:8Pins RoHS Compliant: No	0
SI4346DY-T1-E3 DISTI # 70026210	Vishay Siliconix	N-CHANNEL 30-V (D-S) MOSFET RoHS: Compliant	0	2500:$0.4400 5000:$0.4200 7500:$0.3900
SI4346DY-T1-E3 DISTI # 781-SI4346DY-T1-E3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3 RoHS: Compliant	0
SI4346DY-T1-E3	Vishay Siliconix	MOSFET Transistor, N-Channel, SO	20	1:$1.7500
SI4346DY-T1-E3	---		7
SI4346DY-T1-E3	Vishay Intertechnologies		6969
SI4346DYT1E3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 5.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant	Europe - 2500
SI4346DY-T1-E3			281
SI4346DY-T1-E3 DISTI # 1839003	Vishay Intertechnologies	MOSFET,N CH,30V,5.9A,8-SOIC RoHS: Compliant	995	1000:£0.3290 500:£0.3360 100:£0.3430 50:£0.4530 5:£0.5100

相關產品

圖片	型號	描述
	Mfr.#: SI4346DY-T1-GE3 OMO.#: OMO-SI4346DY-T1-GE3	MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
	Mfr.#: SI4346DY-T1-GE3 OMO.#: OMO-SI4346DY-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 30V 8.0A 2.5W 23mohm @ 10V
	Mfr.#: SI4346DY-T1 OMO.#: OMO-SI4346DY-T1-1190	全新原裝
	Mfr.#: SI4346DY-T1-E3 OMO.#: OMO-SI4346DY-T1-E3-VISHAY	MOSFET N-CH 30V 5.9A 8-SOIC

可用性

庫存:: Available
訂購:: 2500
輸入數量:

SI4346DY-T1-E3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]

參考價格（美元）

數量
單價
小計金額

1: ~~US$0.45~~; ~~US$0.45~~

10: ~~US$0.43~~; ~~US$4.28~~

100: ~~US$0.40~~; ~~US$40.50~~

500: ~~US$0.38~~; ~~US$191.25~~

1000: ~~US$0.36~~; ~~US$360.00~~

從...開始

SI4346D 3
SI4346 4
SI434 14
SI43 161
SI4 2994

SI4346DY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes