BSS169H6327XT

BSS169H6327XT
Mfr. #:
BSS169H6327XT
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 100V 90mA SOT-23-3
生命週期:
製造商新產品
數據表:
BSS169H6327XT 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
BSS169H6327XT 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
PG-SOT-23-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
100 V
Id - 連續漏極電流:
90 mA
Rds On - 漏源電阻:
6 Ohms
Vgs th - 柵源閾值電壓:
2.9 V
Vgs - 柵源電壓:
10 V
Qg - 門電荷:
2.1 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
360 mW
配置:
單身的
頻道模式:
消耗
資質:
AEC-Q101
打包:
捲軸
高度:
1.1 mm
長度:
2.9 mm
產品:
MOSFET 小信號
系列:
BSS169
晶體管類型:
1 N-Channel
類型:
SIPMOS 小信號晶體管
寬度:
1.3 mm
品牌:
英飛凌科技
正向跨導 - 最小值:
0.1 S
秋季時間:
27 ns
產品類別:
MOSFET
上升時間:
2.7 ns
出廠包裝數量:
3000
子類別:
MOSFET
典型關斷延遲時間:
11 ns
典型的開啟延遲時間:
2.9 ns
第 # 部分別名:
BSS169 BSS169H6327XTSA1 H6327 SP000702572
單位重量:
0.000282 oz
Tags
BSS169H63, BSS169H, BSS169, BSS16, BSS1, BSS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
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可用性
庫存:
211
訂購:
2194
輸入數量:
BSS169H6327XT的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$0.50
US$0.50
10
US$0.39
US$3.88
100
US$0.21
US$21.00
1000
US$0.16
US$158.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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