SIR168DP-T1-GE3

SIR168DP-T1-GE3
Mfr. #:
SIR168DP-T1-GE3
製造商:
Vishay
描述:
IGBT Transistors MOSFET 30V 40A 34.7W 4.4mohm @ 10V
生命週期:
製造商新產品
數據表:
SIR168DP-T1-GE3 數據表
交貨:
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支付:
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ECAD Model:
產品屬性
屬性值
製造商
威世
產品分類
集成電路芯片
系列
SIRxxxDP
打包
捲軸
部分別名
SIR168DP-GE3
單位重量
0.017870 oz
安裝方式
貼片/貼片
包裝盒
SO-8
技術
通道數
1 Channel
配置
單身的
晶體管型
1 N-Channel
鈀功耗
34.7 W
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
VGS-柵極-源極-電壓
20 V
Id 連續漏極電流
40 A
Vds-漏-源-擊穿電壓
30 V
Rds-On-Drain-Source-Resistance
4.4 mOhms
晶體管極性
N通道
Tags
SIR16, SIR1, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 25.1A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 30V 40A PPAK SO-8
***
N-CHANNEL 30-V (D-S) MOSFET
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:40A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0044ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.4V; Power Dissipation, Pd:5W ;RoHS Compliant: Yes
型號 製造商 描述 庫存 價格
SIR168DP-T1-GE3
DISTI # SIR168DP-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 30V 40A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
  • 3000:$0.4389
SIR168DP-T1-GE3
DISTI # 781-SIR168DP-GE3
Vishay IntertechnologiesMOSFET 30V 40A 34.7W 4.4mohm @ 10V
RoHS: Compliant
0
    SIR168DP-T1-GE3Vishay IntertechnologiesMOSFET 30V 40A 34.7W 4.4mohm @ 10VAmericas -
      圖片 型號 描述
      SIR168DP-T1-GE3

      Mfr.#: SIR168DP-T1-GE3

      OMO.#: OMO-SIR168DP-T1-GE3-VISHAY

      IGBT Transistors MOSFET 30V 40A 34.7W 4.4mohm @ 10V
      SIR168DP

      Mfr.#: SIR168DP

      OMO.#: OMO-SIR168DP-1190

      全新原裝
      可用性
      庫存:
      Available
      訂購:
      1000
      輸入數量:
      SIR168DP-T1-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格(美元)
      數量
      單價
      小計金額
      1
      US$0.55
      US$0.55
      10
      US$0.52
      US$5.20
      100
      US$0.49
      US$49.26
      500
      US$0.47
      US$232.60
      1000
      US$0.44
      US$437.90
      由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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