NTMD4184PFR2G

NTMD4184PFR2G
Mfr. #:
NTMD4184PFR2G
製造商:
ON Semiconductor
描述:
MOSFET PFET FTKY S08 30V TR 3.8A
生命週期:
製造商新產品
數據表:
NTMD4184PFR2G 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NTMD4184PFR2G DatasheetNTMD4184PFR2G Datasheet (P4-P6)NTMD4184PFR2G Datasheet (P7)
ECAD Model:
產品屬性
屬性值
製造商:
安森美半導體
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
SOIC-8
通道數:
1 Channel
晶體管極性:
P-通道
Vds - 漏源擊穿電壓:
30 V
Id - 連續漏極電流:
4 A
Rds On - 漏源電阻:
95 mOhms
Vgs - 柵源電壓:
20 V
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
2.31 W
配置:
單身的
頻道模式:
增強
打包:
捲軸
高度:
1.5 mm
長度:
5 mm
系列:
NTMD4184PF
晶體管類型:
1 P-Channel
寬度:
4 mm
品牌:
安森美半導體
秋季時間:
2.8 ns
產品類別:
MOSFET
上升時間:
12 ns
出廠包裝數量:
2500
子類別:
MOSFET
典型關斷延遲時間:
18 ns
典型的開啟延遲時間:
7.2 ns
單位重量:
0.006596 oz
Tags
NTMD4184PF, NTMD41, NTMD4, NTMD, NTM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
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***emi
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***nell
MOSFET, P-CH, 30V, 3.3A, 150DEG C, 1.6W; Available until stocks are exhausted
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*** Source Electronics
Trans MOSFET P-CH Si 30V 4.6A 8-Pin SOIC N T/R / MOSFET P-CH 30V 4.6A 8-SOIC
***eco
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***ure Electronics
Single P-Channel 30 V 0.13 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8
***ter Electronics
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***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***S.I.T. Europe - USA - Asia
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***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ark
P CHANNEL MOSFET, -30V, 4.6A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***p One Stop Global
Trans MOSFET N/P-CH 30V 3.7A/2.9A 8-Pin SOIC N T/R
***emi
Dual N & P-Channel Enhancement Mode Field Effect Transistor 30V
***r Electronics
Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.7A; On Resistance, Rds(on):80mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***nell
MOSFET N & P CH 30V 3.7/-2.9A 8SOIC; Transistor Type:MOSFET; Transistor Polarity:N/P ; Voltage, Vds Typ:30V; Current, Id Cont:3.7A; On State Resistance:80mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.7V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
***p One Stop
Trans MOSFET N/P-CH 30V 6.8A/4.6A 8-Pin SOIC N T/R
***ure Electronics
Dual N/P-Channel 30 V 27/64 mOhm 6.8/8.1 nC HEXFET® Power Mosfet - SOIC-8
***ark
MOSFET, 30V, N+P, 27 m and -64 m , 6.8A and -4.6A, SO-8, TAPE & REEL
***ineon SCT
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ineon
Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; Dual N and P-Channel MOSFET
***nell
MOSFET, DUAL N & P-CH, 30V, 6.8A, SOIC-8; Transistor Polarity: Dual N and P Channel; Continuous Drain Current Id: 6.8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold
***emi
Power MOSFET and Schottky Diode, 30 V, 5.7 A, Single N-Channel
***th Star Micro
NTMD4884NF: Small Signal MOSFET 30V 5.7A 70 mOhm Dual N-Channel SO-8 FETKY
***ark
N Channel Mosfet, 30V, 5.7A, Soic, Full Reel
***r Electronics
Small Signal Field-Effect Transistor, 3.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ure Electronics
Dual N-Channel 30 V 0.04 Ohm 2.3 W Surface Mount Power Mosfet - SOIC-8
***et Europe
Transistor MOSFET Array Dual N-CH 30V 5.8A 8-Pin SOIC T/R
***enic
30V 5.8A 40m´Î@10V5A 2.3W 3V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS
***ark
Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.8A; On Resistance Rds(on):0.033ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: No
***ment14 APAC
MOSFET, NN-CH, 30V, 5.8A, SO8; Transistor Polarity:Dual N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.8A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):33mohm; Power Dissipation Pd:2.3W; Voltage Vgs Max:20V
***(Formerly Allied Electronics)
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.1Ohm;ID -3.6A;SO-8;PD 2W;VGS +/-20V
***et Europe
Transistor MOSFET Array Dual P-CH 30V 3.6A 8-Pin SOIC T/R
***ure Electronics
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*** Stop Electro
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***nell
MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; Po
***ark
Channel Type:dual P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:-; Continuous Drain Current Id P Channel:3.6A; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes
型號 製造商 描述 庫存 價格
NTMD4184PFR2G
DISTI # V36:1790_07296438
ON SemiconductorTrans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R
RoHS: Compliant
0
  • 2500000:$0.1697
  • 1250000:$0.1699
  • 250000:$0.1893
  • 25000:$0.2224
  • 2500:$0.2279
NTMD4184PFR2G
DISTI # V72:2272_07296438
ON SemiconductorTrans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R
RoHS: Compliant
0
    NTMD4184PFR2G
    DISTI # NTMD4184PFR2GOSCT-ND
    ON SemiconductorMOSFET P-CH 30V 2.3A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    484In Stock
    • 1000:$0.2574
    • 500:$0.3331
    • 100:$0.4239
    • 10:$0.5680
    • 1:$0.6600
    NTMD4184PFR2G
    DISTI # NTMD4184PFR2GOSDKR-ND
    ON SemiconductorMOSFET P-CH 30V 2.3A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    484In Stock
    • 1000:$0.2574
    • 500:$0.3331
    • 100:$0.4239
    • 10:$0.5680
    • 1:$0.6600
    NTMD4184PFR2G
    DISTI # NTMD4184PFR2GOSTR-ND
    ON SemiconductorMOSFET P-CH 30V 2.3A 8-SOIC
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)
    On Order
    • 25000:$0.1882
    • 12500:$0.1984
    • 5000:$0.2132
    • 2500:$0.2278
    NTMD4184PFR2G
    DISTI # NTMD4184PFR2G
    ON SemiconductorTrans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R (Alt: NTMD4184PFR2G)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel
    Europe - 2500
    • 25000:€0.1769
    • 15000:€0.1899
    • 10000:€0.2059
    • 5000:€0.2249
    • 2500:€0.2749
    NTMD4184PFR2G
    DISTI # NTMD4184PFR2G
    ON SemiconductorTrans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R (Alt: NTMD4184PFR2G)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel
    Asia - 0
    • 125000:$0.2295
    • 62500:$0.2333
    • 25000:$0.2414
    • 12500:$0.2500
    • 7500:$0.2593
    • 5000:$0.2692
    • 2500:$0.2800
    NTMD4184PFR2G
    DISTI # NTMD4184PFR2G
    ON SemiconductorTrans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R - Tape and Reel (Alt: NTMD4184PFR2G)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 25000:$0.1719
    • 15000:$0.1769
    • 10000:$0.1789
    • 5000:$0.1809
    • 2500:$0.1829
    NTMD4184PFR2G.
    DISTI # 29AC9058
    ON SemiconductorContinuous Drain Current Id:4A,Drain Source Voltage Vds:30V,Operating Temperature Max:150°C,Product Range:-,Automotive Qualification Standard:-,MSL:- RoHS Compliant: Yes0
    • 25000:$0.1720
    • 15000:$0.1770
    • 10000:$0.1790
    • 5000:$0.1810
    • 1:$0.1830
    NTMD4184PFR2G
    DISTI # 863-NTMD4184PFR2G
    ON SemiconductorMOSFET PFET FTKY S08 30V TR 3.8A
    RoHS: Compliant
    2048
    • 1:$0.6100
    • 10:$0.5060
    • 100:$0.3090
    • 1000:$0.2390
    • 2500:$0.2030
    • 10000:$0.1900
    • 25000:$0.1800
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    可用性
    庫存:
    Available
    訂購:
    2500
    輸入數量:
    NTMD4184PFR2G的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$0.61
    US$0.61
    10
    US$0.51
    US$5.06
    100
    US$0.31
    US$30.90
    1000
    US$0.24
    US$239.00
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