APT30GP60BDQ1G

Mfr. #:: APT30GP60BDQ1G
製造商:: Microchip / Microsemi
描述:: IGBT Transistors FG, IGBT, 600V, 30A, TO-247, RoHS
生命週期:: 製造商新產品
數據表:: APT30GP60BDQ1G 數據表
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HTML Datasheet:: APT30GP60BDQ1G Datasheet APT30GP60BDQ1G Datasheet (P4-P6)APT30GP60BDQ1G Datasheet (P7-P9)
ECAD Model:

產品屬性
屬性值

製造商：: 微芯片

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

打包：: 管子

品牌：: 微芯片/Microsemi

產品類別：: IGBT晶體管

出廠包裝數量：: 1

子類別：: IGBT

Tags: APT30GP60BDQ1, APT30GP60BDQ, APT30GP60BD, APT30GP60B, APT30GP, APT30G, APT30, APT3, APT

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

APT30GP60BDQ1G 描述

***ical: Trans IGBT Chip N-CH 600V 100A 463000mW 3-Pin(3+Tab) TO-247 Tube

*** Stop Electro: Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD

***rochip: IGBT PT MOS 7 Combi 600 V 30 A TO-247

***ure Electronics: IGBT PT 600 V 100 A 463 W Through Hole TO-247 [B]

***p One Stop: Trans IGBT Chip N-CH 600V 100A 333000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: IKW50N60H3 Series 600 V 100 A Trench Field Stop IGBT - PG-TO-247-3

***Parts: IGBTs - Single, Transistors N-Channel, PG-TO247-3 100A 600V 333W Through Hole

***ineon SCT: 600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

***nell: IGBT, SINGLE, 600V, 100A, TO-247-3; DC Collector Current: 100A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 333W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of

***ineon: Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications

***ical: Trans IGBT Chip N-CH 600V 100A 333000mW 3-Pin(3+Tab) TO-247 Tube

***ineon SCT: High speed 600 V, 50 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses, PG-TO247-3, RoHS

***ment14 APAC: IGBT,600V,50A,TO247; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2.3V; Power Dissipation Pd:333W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:333W

***ineon: Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications

***ical: Trans IGBT Chip N-CH 600V 100A 417000mW 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD

*** Electronics: ON SEMICONDUCTOR NGTB50N60S1WG IGBT Single Transistor, 100 A, 1.8 V, 417 W, 600 V, TO-247, 3 Pins

***ical: Trans IGBT Chip N-CH 600V 100A 595000mW 3-Pin(3+Tab) TO-247 Tube

*** Electronics: ON SEMICONDUCTOR NGTB75N60SWG IGBT Single Transistor, 100 A, 1.7 V, 595 W, 600 V, TO-247, 3 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD

***nell: IGBT, SINGLE, 600V, 100A, TO-247-3;

***ical: Trans IGBT Chip N=-CH 600V 100A 595000mW 3-Pin(3+Tab) TO-247 Tube

***el Electronic: RES SMD 23.7K OHM 1% 1/8W 0805

***r Electronics: Insulated Gate Bipolar Transistor

***ical: Trans IGBT Chip N-CH 600V 100A 360000mW 3-Pin(3+Tab) TO-247 Tube

***icroelectronics: 50 A, 600 V field stop trench gate IGBT with Ultrafast diode

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247

***el Electronic: IGBT Transistors 50A 600V FST IGBT Ultrafast Diode

***ponent Stockers USA: 100 A 600 V N-CHANNEL IGBT TO-247

***et: STMICROELECTRONICS STGW50H60DF IGBTS

Market price

型號	製造商	描述	庫存	價格
APT30GP60BDQ1G DISTI # V99:2348_09096332	Microsemi Corporation	Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247 RoHS: Compliant	60	100:$8.0100 25:$9.5109 10:$9.6080 1:$9.6300
APT30GP60BDQ1G DISTI # APT30GP60BDQ1G-ND	Microsemi Corporation	IGBT 600V 100A 463W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	74In Stock	510:$7.2378 270:$7.9383 120:$8.6387 30:$9.5727 10:$10.5070 1:$11.6700
APT30GP60BDQ1G DISTI # 28981976	Microsemi Corporation	Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247 RoHS: Compliant	1463	8:$7.3000
APT30GP60BDQ1G DISTI # 31011300	Microsemi Corporation	Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247 RoHS: Compliant	60	25:$9.5109 10:$9.6080 2:$9.6300
APT30GP60BDQ1G DISTI # 494-APT30GP60BDQ1G	Microsemi Corporation	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi RoHS: Compliant	0	1:$10.9000
APT30GP60BDQ1G DISTI # APT30GP60BDQ1G	Microsemi Corporation	POWER IGBT TRANSISTOR RoHS: Compliant	1463	1:$5.6600 500:$5.5200
APT30GP60BDQ1G DISTI # C1S505800105499	Microsemi Corporation	Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247 RoHS: Compliant	1463	500:$7.6600 200:$7.7400 100:$7.8200 50:$7.9200 10:$8.0100 5:$10.0000