FQP4N60

FQP4N60
Mfr. #:
FQP4N60
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 600V N-Channel QFET
生命週期:
製造商新產品
數據表:
FQP4N60 數據表
交貨:
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ECAD Model:
產品屬性
屬性值
製造商:
安森美半導體
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-220-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
600 V
Id - 連續漏極電流:
4.4 A
Rds On - 漏源電阻:
2.2 Ohms
Vgs - 柵源電壓:
30 V
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
106 W
配置:
單身的
頻道模式:
增強
打包:
管子
高度:
16.3 mm
長度:
10.67 mm
晶體管類型:
1 N-Channel
類型:
MOSFET
寬度:
4.7 mm
品牌:
安森美半導體/飛兆半導體
正向跨導 - 最小值:
4 S
秋季時間:
35 ns
產品類別:
MOSFET
上升時間:
45 ns
出廠包裝數量:
1000
子類別:
MOSFET
典型關斷延遲時間:
25 ns
典型的開啟延遲時間:
13 ns
第 # 部分別名:
FQP4N60_NL
單位重量:
0.050717 oz
Tags
FQP4N60, FQP4N6, FQP4N, FQP4, FQP
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 600V 4.4A TO-220
***ser
MOSFETs 600V N-Channel QFET
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:4.4A; Resistance, Rds On:2.2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Alternate Case Style:SOT-78B; Current, Idm Pulse:17.6A; No. of Pins:3; Power Dissipation:106W; Power, Pd:106W; Resistance, Rds on Max:2.2ohm; Voltage, Vds Max:600V; Voltage, Vgs th Max:5V
型號 製造商 描述 庫存 價格
FQP4N60
DISTI # FQP4N60-ND
ON SemiconductorMOSFET N-CH 600V 4.4A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube
Limited Supply - Call
    FQP4N60
    DISTI # 512-FQP4N60
    ON SemiconductorMOSFET 600V N-Channel QFET
    RoHS: Compliant
    0
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      可用性
      庫存:
      Available
      訂購:
      1000
      輸入數量:
      FQP4N60的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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