IRF6638TR1PBF

Mfr. #:: IRF6638TR1PBF
製造商:: Infineon Technologies
描述:: MOSFET N-CH 30V 25A DIRECTFET
生命週期:: 製造商新產品
數據表:: IRF6638TR1PBF 數據表
交貨:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRF6638TR1PBF Datasheet IRF6638TR1PBF Datasheet (P4-P6)IRF6638TR1PBF Datasheet (P7-P9)IRF6638TR1PBF Datasheet (P10)
ECAD Model:

產品屬性
屬性值

製造商: 紅外線

產品分類: FET - 單

Tags: IRF6638, IRF663, IRF66, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6638TR1PBF 描述

***et Europe: Trans MOSFET N-CH 30V 25A 7-Pin Direct-FET MX T/R

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):2.9mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MX ;RoHS Compliant: Yes

***ernational Rectifier: A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes optimized with low on resistance for applications such as active ORýing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number

***nell: MOSFET, N, DIRECTFET, MX; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 2.8mW; Transistor Case Style: DirectFET MX; No. of Pins: 5Pins; Operating Temperature Max: 150°C; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas: 37mJ; Base Number: 6638; Cont Current Id @ 70°C: 20A; Current Id Max: 20A; Fall Time tf: 6.2ns; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -40°C; Operating Temperature Min: -40°C; Operating Temperature Range: -40°C to +150°C; Pulse Current Idm: 200A; Rise Time: 45ns; Storage Temperature Max: 150°C; Storage Temperature Min: -40°C; Termination Type: Surface Mount Device; Voltage Vds: 30V; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.8V; Voltage Vgs Rds on Measurement: 10V

Market price

型號	製造商	描述	庫存	價格
IRF6638TR1PBF DISTI # IRF6638TR1PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 30V 25A DIRECTFET RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6638TR1PBF DISTI # IRF6638TR1PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 30V 25A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF6638TR1PBF DISTI # IRF6638TR1PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 25A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF6638TR1PBF DISTI # 70018843	Infineon Technologies AG	30V SINGLE N-CHANNEL HEXFET POWER MOSFET,DIRECTFET MX PKG RoHS: Compliant	0	1000:$1.8400 2000:$1.6800
IRF6638TR1PBF DISTI # 942-IRF6638TR1PBF	Infineon Technologies AG	MOSFET 30V 1 N-CH HEXFET DIRECTFET MX RoHS: Compliant	0

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