FGA40T65SHD

FGA40T65SHD
Mfr. #:
FGA40T65SHD
製造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors FS3TIGBT TO3PN 40A 650V
生命週期:
製造商新產品
數據表:
FGA40T65SHD 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FGA40T65SHD 更多信息
產品屬性
屬性值
製造商:
安森美半導體
產品分類:
IGBT晶體管
RoHS:
Y
技術:
包裝/案例:
TO-3PN
安裝方式:
通孔
集電極-發射極電壓 VCEO 最大值:
650 V
集電極-發射極飽和電壓:
2.14 V
最大柵極發射極電壓:
30 V
25 C 時的連續集電極電流:
80 A
Pd - 功耗:
268 W
最低工作溫度:
- 55 C
最高工作溫度:
+ 175 C
系列:
FGA40T65SHD
打包:
管子
連續集電極電流 Ic 最大值:
80 A
品牌:
安森美半導體/飛兆半導體
柵極-發射極漏電流:
400 nA
產品類別:
IGBT晶體管
出廠包裝數量:
450
子類別:
IGBT
單位重量:
0.225789 oz
Tags
FGA40T6, FGA40T, FGA40, FGA4, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-3PN Rail
***emi
IGBT, 650 V, 40 A Field Stop Trench
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel
***el Electronic
IC REG LINEAR 2.5V 300MA SOT23-5
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N=-CH 650V 60A 238000mW 3-Pin(3+Tab) TO-3PN Rail
***nell
FIELD STOP TRENCH IGBT, 650V/60A, TO-3PN; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 238W; Collector Emitter Voltage V(br)ceo: 6; Available until stocks are exhausted
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 650V 80A 267000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, 650V, 80A, 175DEG C, 267W, TO247AB; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 267W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***et Europe
Trans IGBT Chip N-CH 650V 100A 3-Pin TO-3PN Tube
***emi
IGBT, 650 V, 50 A Field Stop Trench
***r Electronics
Insulated Gate Bipolar Transistor, 100A I(C), 650V V(BR)CES, N-Channel
***ure Electronics
Field Stop Trench IGBT 650V, 50A, TO-3PN
***ark
RAIL / 650V FS Gen3 Trench IGBT
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***p One Stop Global
Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, 650V, 50A, TO247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 305W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;
***ineon SCT
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO247-3, RoHS
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
*** Stop Electro
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
***nell
IGBT, 650V, 50A, TO247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 305W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***p One Stop Global
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-3P Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
***ure Electronics
STGWT40 Series 650 V 80 A Through Hole Silicon IGBT - TO-3P
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
FGAFx0N60 Field Stop IGBTs
ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
型號 製造商 描述 庫存 價格
FGA40T65SHD
DISTI # V99:2348_06359725
ON Semiconductor650V FS GEN3 TRENCH IGBT475
  • 5000:$2.0310
  • 2500:$2.0820
  • 1000:$2.1960
  • 500:$2.5350
  • 250:$2.7720
  • 100:$2.8980
  • 10:$3.2359
  • 1:$3.7140
FGA40T65SHDF
DISTI # V99:2348_06359201
ON Semiconductor650V FS GEN3 TRENCH IGBT450
  • 5000:$1.9900
  • 2500:$2.0410
  • 1000:$2.1540
  • 500:$2.4840
  • 250:$2.7199
  • 100:$2.8460
  • 10:$3.1690
  • 1:$3.6380
FGA40T65SHD
DISTI # FGA40T65SHD-ND
ON SemiconductorIGBT 650V 80A 268W TO-3PN
RoHS: Compliant
Min Qty: 1
Container: Tube
450In Stock
  • 1350:$2.3814
  • 900:$2.8237
  • 450:$3.1468
  • 10:$4.0480
  • 1:$4.5100
FGA40T65SHDF
DISTI # FGA40T65SHDF-ND
ON SemiconductorIGBT 650V 80A 268W TO-3PN
RoHS: Compliant
Min Qty: 1
Container: Tube
444In Stock
  • 1350:$2.3373
  • 900:$2.7714
  • 450:$3.0886
  • 10:$3.9730
  • 1:$4.4200
FGA40T65SHD
DISTI # 25845378
ON Semiconductor650V FS GEN3 TRENCH IGBT475
  • 250:$2.7720
  • 100:$2.8980
  • 10:$3.2359
  • 3:$3.7140
FGA40T65SHDF
DISTI # 25845320
ON Semiconductor650V FS GEN3 TRENCH IGBT450
  • 250:$2.7199
  • 100:$2.8460
  • 10:$3.1690
  • 3:$3.6380
FGA40T65SHD
DISTI # FGA40T65SHD
ON SemiconductorTrans IGBT Chip N-CH 650V 80A 3-Pin TO-3PN Tube (Alt: FGA40T65SHD)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 300
  • 1:€2.4900
  • 10:€2.2900
  • 25:€2.1900
  • 50:€2.0900
  • 100:€1.9900
  • 500:€1.9900
  • 1000:€1.7900
FGA40T65SHD
DISTI # FGA40T65SHD
ON SemiconductorTrans IGBT Chip N-CH 650V 80A 3-Pin TO-3PN Tube - Rail/Tube (Alt: FGA40T65SHD)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 450:$2.0900
  • 900:$2.0900
  • 1800:$1.9900
  • 2700:$1.9900
  • 4500:$1.9900
FGA40T65SHDF
DISTI # FGA40T65SHDF
ON SemiconductorTrans IGBT Chip N-CH 650V 80A 3-Pin TO-3PN Tube - Rail/Tube (Alt: FGA40T65SHDF)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 450:$1.9900
  • 900:$1.9900
  • 1800:$1.9900
  • 2700:$1.9900
  • 4500:$1.8900
FGA40T65SHD
DISTI # 512-FGA40T65SHD
ON SemiconductorIGBT Transistors FS3TIGBT TO3PN 40A 650V
RoHS: Compliant
123
  • 1:$4.2900
  • 10:$3.6500
  • 100:$3.1600
  • 250:$3.0000
  • 500:$2.6900
  • 1000:$2.2700
  • 2500:$2.1600
FGA40T65SHDF
DISTI # 512-FGA40T65SHDF
ON SemiconductorIGBT Transistors FS3TIGBT TO3PN 40A 650V
RoHS: Compliant
307
  • 1:$4.2100
  • 10:$3.5800
  • 100:$3.1100
  • 250:$2.9500
  • 500:$2.6400
  • 1000:$2.2300
  • 2500:$2.1200
FGA40T65SHD
DISTI # C1S541901520685
ON SemiconductorTrans IGBT Chip N-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-3PN Tube
RoHS: Compliant
475
  • 250:$2.7720
  • 100:$2.8980
  • 10:$3.2359
  • 1:$3.7140
FGA40T65SHDF
DISTI # C1S541901510110
ON SemiconductorTrans IGBT Chip N-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-3PN Tube
RoHS: Compliant
450
  • 250:$2.7199
  • 100:$2.8460
  • 10:$3.1690
  • 1:$3.6380
圖片 型號 描述
FGA40S65SH

Mfr.#: FGA40S65SH

OMO.#: OMO-FGA40S65SH

IGBT Transistors 650V 40A Field Stop Trench IGBT
FGA40T65SHD

Mfr.#: FGA40T65SHD

OMO.#: OMO-FGA40T65SHD-ON-SEMICONDUCTOR

IGBT Transistors 650V FS Gen3 Trench IGBT
FGA40T65SHDF

Mfr.#: FGA40T65SHDF

OMO.#: OMO-FGA40T65SHDF-ON-SEMICONDUCTOR

IGBT Transistors 650V FS Gen3 Trench IGBT
FGA40S65SH

Mfr.#: FGA40S65SH

OMO.#: OMO-FGA40S65SH-ON-SEMICONDUCTOR

650V FS GEN3 TRENCH IGBT
FGA40N120D

Mfr.#: FGA40N120D

OMO.#: OMO-FGA40N120D-1190

全新原裝
FGA40N150D

Mfr.#: FGA40N150D

OMO.#: OMO-FGA40N150D-1190

全新原裝
FGA40N60

Mfr.#: FGA40N60

OMO.#: OMO-FGA40N60-1190

全新原裝
FGA40N65

Mfr.#: FGA40N65

OMO.#: OMO-FGA40N65-1190

全新原裝
FGA40T120SMD

Mfr.#: FGA40T120SMD

OMO.#: OMO-FGA40T120SMD-1190

全新原裝
FGA40T65UQDF

Mfr.#: FGA40T65UQDF

OMO.#: OMO-FGA40T65UQDF-ON-SEMICONDUCTOR

IGBT 650V 80A 231W TO3PN
可用性
庫存:
123
訂購:
2106
輸入數量:
FGA40T65SHD的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$4.28
US$4.28
10
US$3.64
US$36.40
100
US$3.16
US$316.00
250
US$2.99
US$747.50
500
US$2.69
US$1 345.00
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