IPA60R170CFD7XKSA1

IPA60R170CFD7XKSA1
Mfr. #:
IPA60R170CFD7XKSA1
製造商:
Infineon Technologies
描述:
MOSFET HIGH POWER_NEW
生命週期:
製造商新產品
數據表:
IPA60R170CFD7XKSA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IPA60R170CFD7XKSA1 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-220FP-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
600 V
Id - 連續漏極電流:
8 A
Rds On - 漏源電阻:
144 mOhms
Vgs th - 柵源閾值電壓:
3.5 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
28 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
26 W
配置:
單身的
頻道模式:
增強
商品名:
酷摩
打包:
管子
系列:
CoolMOS CFD7
晶體管類型:
1 N-Channel
品牌:
英飛凌科技
秋季時間:
9 ns
產品類別:
MOSFET
上升時間:
15 ns
出廠包裝數量:
500
子類別:
MOSFET
典型關斷延遲時間:
68 ns
典型的開啟延遲時間:
31 ns
第 # 部分別名:
IPA60R170CFD7 SP001617978
Tags
IPA60R1, IPA60R, IPA60, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 Power Transistor High Power 170mΩ 26W 600V PG-TO 220 FullPAK
***ark
Mosfet, N-Ch, 600V, 8A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.144Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
型號 製造商 描述 庫存 價格
IPA60R170CFD7XKSA1
DISTI # C1S322000697407
Infineon Technologies AGMOSFETs
RoHS: Compliant
500
  • 500:$1.6100
IPA60R170CFD7XKSA1
DISTI # IPA60R170CFD7XKSA1-ND
Infineon Technologies AGMOSFET N-CH TO220FP-3
RoHS: Compliant
Min Qty: 1
Container: Tube
555In Stock
  • 1000:$1.5617
  • 500:$1.8848
  • 100:$2.4233
  • 10:$3.0160
  • 1:$3.3400
IPA60R170CFD7XKSA1
DISTI # IPA60R170CFD7XKSA1
Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 170mΩ 26W 600V PG-TO 220 FullPAK - Rail/Tube (Alt: IPA60R170CFD7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$1.3900
  • 1000:$1.2900
  • 2000:$1.2900
  • 3000:$1.1900
  • 5000:$1.1900
IPA60R170CFD7XKSA1
DISTI # 43AC9320
Infineon Technologies AGMOSFET, N-CH, 600V, 8A, TO-220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.144ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes270
  • 1:$3.1600
  • 10:$2.7200
  • 100:$2.2200
  • 500:$1.9800
  • 1000:$1.6700
  • 2500:$1.5800
  • 5000:$1.5300
IPA60R170CFD7XKSA1
DISTI # 726-IPA60R170CFD7XKS
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
0
  • 1:$2.8900
  • 10:$2.4500
  • 100:$1.9600
  • 500:$1.7200
  • 1000:$1.4200
IPA60R170CFD7XKSA1
DISTI # 2807980
Infineon Technologies AGMOSFET, N-CH, 600V, 8A, TO-220FP
RoHS: Compliant
330
  • 1:£2.5400
  • 10:£1.9100
  • 100:£1.5300
  • 250:£1.4400
  • 500:£1.3400
IPA60R170CFD7XKSA1
DISTI # 2807980
Infineon Technologies AGMOSFET, N-CH, 600V, 8A, TO-220FP
RoHS: Compliant
260
  • 1:$2.9600
  • 10:$2.7700
  • 100:$2.4500
  • 250:$2.3100
  • 500:$2.2000
  • 1000:$2.0900
圖片 型號 描述
TSV912AIDR

Mfr.#: TSV912AIDR

OMO.#: OMO-TSV912AIDR

Operational Amplifiers - Op Amps OP AMP
5.0SMDJ48A

Mfr.#: 5.0SMDJ48A

OMO.#: OMO-5-0SMDJ48A

TVS Diodes / ESD Suppressors 48V 5KW 5% UNI DO-214AB (SMC)
SIHA22N60AEL-GE3

Mfr.#: SIHA22N60AEL-GE3

OMO.#: OMO-SIHA22N60AEL-GE3

MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
IPA60R180P7XKSA1

Mfr.#: IPA60R180P7XKSA1

OMO.#: OMO-IPA60R180P7XKSA1

MOSFET
STFU24N60M2

Mfr.#: STFU24N60M2

OMO.#: OMO-STFU24N60M2

MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP ultra narrow leads package
IPA60R160P6

Mfr.#: IPA60R160P6

OMO.#: OMO-IPA60R160P6

MOSFET N-Ch 600V 10.4A TO220FP-3
ELHS501VSN221MR40S

Mfr.#: ELHS501VSN221MR40S

OMO.#: OMO-ELHS501VSN221MR40S

Aluminum Electrolytic Capacitors - Snap In 220uF 20% 500V Long Life
C2220C225MAR2C7186

Mfr.#: C2220C225MAR2C7186

OMO.#: OMO-C2220C225MAR2C7186

Multilayer Ceramic Capacitors MLCC - SMD/SMT 250V 2.2uF X7R 20% Double Stack
5.0SMDJ48A

Mfr.#: 5.0SMDJ48A

OMO.#: OMO-5-0SMDJ48A-LITTELFUSE

TVS Diodes - Transient Voltage Suppressors TVS Diode SMC Suf MT
SIHA22N60AEL-GE3

Mfr.#: SIHA22N60AEL-GE3

OMO.#: OMO-SIHA22N60AEL-GE3-VISHAY

MOSFET N-CHAN 600V
可用性
庫存:
Available
訂購:
1989
輸入數量:
IPA60R170CFD7XKSA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$2.88
US$2.88
10
US$2.44
US$24.40
100
US$1.95
US$195.00
500
US$1.71
US$855.00
1000
US$1.42
US$1 420.00
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