FDP6035L

Mfr. #:: FDP6035L
製造商:: Rochester Electronics, LLC
描述:: MOSFET N-Ch PowerTrench Logic
生命週期:: 製造商新產品
數據表:: FDP6035L 數據表
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產品屬性
屬性值

製造商: 仙童

產品分類: 集成電路芯片

Tags: FDP6035, FDP603, FDP60, FDP6, FDP

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDP6035L 描述

***et: MOSFET N-Ch PowerTrench Logic

*** Services: CoC and 2-years warranty / RFQ for pricing

***i-Key: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***icroelectronics: N-channel 30 V, 0.0042 Ohm, 75 A, TO-220 STripFET(TM) VI DeepGATE(TM) Power MOSFET

***ical: Trans MOSFET N-CH 30V 75A 3-Pin(3+Tab) TO-220AB Tube

*** Electronic Components: IGBT Transistors MOSFET N-Ch 30V 0.0042 Ohm 75A STripFET VI

***el Electronic: INTERSIL ISL55004IBZOperational Amplifier, Quad, 220 MHz, 4 Amplifier, 300 V/s,2.5V to15V, SOIC, 14 Pins

***r Electronics: Power Field-Effect Transistor, 75A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ure Electronics: Single N-Channel 30 V 4.2 mOhm 38 nC OptiMOS Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 30V 70A 3-Pin(3+Tab) TO-220 Tube

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, PG-TO220-3, RoHS

***nell: MOSFET, N-CH, 30V, 70A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.2V; Power Dissipation Pd: 79W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.2 / Gate-Source Voltage V = 20 / Fall Time ns = 4.4 / Rise Time ns = 5.6 / Turn-OFF Delay Time ns = 28 / Turn-ON Delay Time ns = 7.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 79

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***icroelectronics: N-Channel 60V - 0.014Ohm - 60A - TO-220 StripFET(TM) II MOSFET

*** Electronics: STP60NF06 N-Channel MOSFET, 60 A, 60 V STripFET II, 3-Pin TO-220 STMicroelectronics

***ical: Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: N-Channel 60 V 16 mO STripFET II Power MosFet - TO-220

***enic: 60V 60A 16m´Î@10V30A 110W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***nell: MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation P

***r Electronics: Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ical: Trans MOSFET N-CH 40V 70A 3-Pin(3+Tab) TO-220 Tube

***ineon SCT: OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TO220-3, RoHS

***ineon: OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches

***ure Electronics: Single N-Channel 100 V 12.3 mOhm 26 nC OptiMOS Power Mosfet - TO-220-3

***ow.cn: Trans MOSFET N-CH 100V 58A Automotive 3-Pin(3+Tab) TO-220 Tube

***ponent Stockers USA: 58 A 100 V 0.0126 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***nell: MOSFET, N-CH, 100V, 58A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V;

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO220-3, RoHS

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 58 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 12.6 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 8 / Turn-OFF Delay Time ns = 24 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 94

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***icroelectronics: N-channel 60 V, 0.0115 Ohm, 60 A, TO-220 STripFET(TM) II Power MOSFET

***ical: Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-220AB Tube

***ark: Mosfet, N Channel, 60V, 60A, To-220; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; On Resistance Rds(On):0.0115Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:-Rohs Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 60A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Market price

型號	製造商	描述	庫存	價格
FDP6035L DISTI # 512-FDP6035L	ON Semiconductor	MOSFET N-Ch PowerTrench Logic RoHS: Not compliant	0
FDP6035L	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	3250	1000:$0.7400 500:$0.7800 100:$0.8100 25:$0.8400 1:$0.9100
FDP6035L	Fairchild Semiconductor Corporation	MOSFET Transistor, N-Channel, TO-220AB	10035	1450:$0.6300 801:$0.6900 1:$1.8000

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