MRFE6VP100HR5

Mfr. #:: MRFE6VP100HR5
製造商:: NXP / Freescale
描述:: RF MOSFET Transistors VHV6 100W 50V ISM
生命週期:: 製造商新產品
數據表:: MRFE6VP100HR5 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 恩智浦

產品分類：: 射頻 MOSFET 晶體管

RoHS：: Y

晶體管極性：: N通道

技術：: 矽

Vds - 漏源擊穿電壓：: 141 V

獲得：: 26 dB

輸出功率：: 100 W

最低工作溫度：: - 40 C

最高工作溫度：: + 150 C

安裝方式：: 貼片/貼片

包裝/案例：: NI-780-4

打包：: 捲軸

配置：: 單身的

工作頻率：: 1800 MHz to 2000 MHz

系列：: MRFE6VP100H

類型：: 射頻功率MOSFET

品牌：: 恩智浦/飛思卡爾

產品類別：: 射頻 MOSFET 晶體管

出廠包裝數量：: 50

子類別：: MOSFET

Vgs - 柵源電壓：: - 6 V, 10 V

Vgs th - 柵源閾值電壓：: 2.1 V

第 # 部分別名：: 935319905178

單位重量：: 0.225605 oz

Tags: MRFE6VP1, MRFE6VP, MRFE6V, MRFE6, MRFE, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRFE6VP100HR5 描述

***W: RF Power Transistor,1.8 to 2000 MHz, 100 W, Typ Gain in dB is 27.2 @ 512 MHz, 50 V, LDMOS, SOT1827

***roFlash: RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

***nell: TRANSISTOR, RF, 133V, NI-780H-4L; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 2000MHz; RF Transistor Case: NI-780; No. of Pins: 4Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: -; SVHC: No SVHC (15-Jan-2019)

***ark: LDMOS, RF, 100W, NI-780; Transistor Type:RF MOSFET; Drain Source Voltage Vds:133V DC; Power Dissipation Pd:100W; Operating Frequency Range:1.8MHz to 2GHz; Operating Temperature Min:-40°C; Operating Temperature Max:150°C

***W: RF Power Transistor,470 to 1215 MHz, 90 W, Typ Gain in dB is 22 @ 860 MHz, 50 V, LDMOS, SOT1735

***nsix Microsemi: 1-Element Ultra High Frequency Band Silicon N-Channel Metal-oxide Semiconductor FET TO-272

***ical: Trans RF MOSFET N-CH 110V 5-Pin TO-270 WB T/R

*** Electronic Components: RF MOSFET Transistors VHV6 860MHz 90W TO 272WB4

***ponent Stockers USA: UHF BAND Si N-CHANNEL RF POWER MOSFET TO-272

***W: RF Power Transistor,470 to 1215 MHz, 90 W, Typ Gain in dB is 22 @ 860 MHz, 50 V, LDMOS, SOT1735

***ical: Trans RF MOSFET N-CH 115V 5-Pin TO-272 WB EP T/R

*** Electronic Components: RF MOSFET Transistors VHV6 50V 4.5W TO272WB4

***i-Key: RF 2-ELEMENT, ULTRA HIGH FREQUE

***or: FET RF 2CH 115V 860MHZ TO272-4

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F

***et: Transistor RF FET N-CH 110V 10MHz to 450MHz 2-Pin TO-272 T/R

*** Electronic Components: RF MOSFET Transistors VHV6 10W TO272-2N

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:50µA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.68V; Package/Case:TO-272 ;RoHS Compliant: Yes

***(Formerly Allied Electronics): N-channel MOSFET Transistor 190 A 100 V 4-Pin SOT-227

***ical: Trans MOSFET N-CH 100V 190A 4-Pin SOT-227

*** Source Electronics: Power MOSFET, 190 A | MOSFET N-CH 100V 190A SOT227

***ukat: N-Ch 100V 190A 568W 0,0065R SOT227

***ronik: N-CH 100V 190A 6,5mOhm SOT-227

***ure Electronics: Output & SW Modules - ECONO IGBT-e3

***nell: MOSFET, N-CH, 100V, 190A, SOT-227; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:568W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-227; No. of Pins:4; MSL:-; Operating Temperature Range:-55°C to +150°C

***ure Electronics: N-Channel 125 V 389 W HF/VHF/UHF MOS Field-Effect RF Power Transistor-M174

***roFlash: Rf Fet Transistor, 125 V, 20 A, 389 W, 230 Mhz, M174 Rohs Compliant: Yes

***r Electronics: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***el Electronic: TDK - CGA2B3X7S2A102K050BB - Keramikvielschichtkondensator, SMD, 1000 pF, 100 V, 0402 [Metrisch 1005], ± 10%, X7S, Baureihe CGA

***nell: MOSFET, RF, 150W, 125V, 20A, M174; Drain Source Voltage Vds: 125V; Continuous Drain Current Id: 20A; Power Dissipation Pd: 389W; Operating Frequency Min: -; Operating Frequency Max: 230MHz; RF Transistor Case: M174; No. of Pin

***r Electronics: RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ure Electronics: STAC2942 Series 130 V 40 A 350 W 21 dB N-channel RF SMT Power Transistor

***el Electronic: TDK - CGA5L3X7R2E104K160AA - SMD flerskiktig keramisk kondensator, 0.1 µF, 250 V, 1206 [3216 Metrisk], ± 10%, X7R, CGA Serien

***nell: RF TRANSISTOR, 130V, 175MHZ, STAC244B; Drain Source Voltage Vds: 130V; Continuous Drain Current Id: 40A; Power Dissipation Pd: 625W; Operating Frequency Min: -; Operating Frequency Max: 175MHz; RF Transistor Case: STAC244B; No. of Pins: 4Pins; Operating Temperature Max: 200°C; Product Range: -; MSL: -; SVHC: No SVHC (07-Jul-2017)

Market price

型號	製造商	描述	庫存	價格
MRFE6VP100HR5 DISTI # V72:2272_07190026	NXP Semiconductors	Trans RF MOSFET N-CH 133V 5-Pin Case 465M-01 T/R RoHS: Compliant	23	10:$77.0600 1:$80.9800
MRFE6VP100HR5 DISTI # MRFE6VP100HR5CT-ND	NXP Semiconductors	FET RF 2CH 133V 512MHZ NI780 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	19In Stock	10:$78.4140 1:$82.6800
MRFE6VP100HR5 DISTI # MRFE6VP100HR5DKR-ND	NXP Semiconductors	FET RF 2CH 133V 512MHZ NI780 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	19In Stock	10:$78.4140 1:$82.6800
MRFE6VP100HR5 DISTI # MRFE6VP100HR5TR-ND	NXP Semiconductors	FET RF 2CH 133V 512MHZ NI780 RoHS: Compliant Min Qty: 50 Container: Tape & Reel (TR)	On Order	100:$68.8794 50:$74.0582
MRFE6VP100HR5 DISTI # 26078465	NXP Semiconductors	Trans RF MOSFET N-CH 133V 5-Pin Case 465M-01 T/R RoHS: Compliant	122	1:$111.5400
MRFE6VP100HR5 DISTI # 25766996	NXP Semiconductors	Trans RF MOSFET N-CH 133V 5-Pin Case 465M-01 T/R RoHS: Compliant	23	10:$77.0600 1:$80.9800
MRFE6VP100HR5 DISTI # MRFE6VP100HR5	Avnet, Inc.	Trans MOSFET N-CH 133V 4-Pin NI-780 T/R - Tape and Reel (Alt: MRFE6VP100HR5) RoHS: Compliant Min Qty: 50 Container: Reel	Americas - 0	50:$71.7900 100:$67.2900 200:$67.0900 300:$66.8900 500:$66.7900
MRFE6VP100HR5 DISTI # 28W3506	Avnet, Inc.	Trans MOSFET N-CH 133V 4-Pin NI-780 T/R - Product that comes on tape, but is not reeled (Alt: 28W3506) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$81.6700
MRFE6VP100HR5 DISTI # 28W3506	NXP Semiconductors	LDMOS, RF, 100W, NI-780,Drain Source Voltage Vds:133VDC,Continuous Drain Current Id:-,Power Dissipation Pd:100W,Operating Frequency Min:1.8MHz,Operating Frequency Max:2GHz,RF Transistor Case:NI-780,No. of Pins:4Pins,MSL:- RoHS Compliant: Yes	1	1:$89.9400 10:$85.2800 25:$81.6700
MRFE6VP100HR5 DISTI # 05W8099	NXP Semiconductors	LDMOS, RF, 100W, NI-780, FULL REEL,Drain Source Voltage Vds:133VDC,Continuous Drain Current Id:-,Power Dissipation Pd:100W,Operating Frequency Min:1.8MHz,Operating Frequency Max:2GHz,RF Transistor Case:NI-780,No. of Pins:4PinsRoHS Compliant: Yes	0	1:$86.7500 50:$61.9600
MRFE6VP100HR5 DISTI # 841-MRFE6VP100HR5	NXP Semiconductors	RF MOSFET Transistors VHV6 100W 50V ISM RoHS: Compliant	267	1:$89.9400 5:$88.2000 10:$85.2800 25:$81.6700 50:$80.5500 100:$74.9200
MRFE6VP100HR5	Freescale Semiconductor	RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant	1	1000:$68.1500 500:$71.7300 100:$74.6800 25:$77.8800 1:$83.8700
MRFE6VP100HR5 DISTI # MRFE6VP100HR5	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	393	1:$86.6000 10:$80.0400 25:$77.6800
MRFE6VP100HR5 DISTI # 2776256	NXP Semiconductors	TRANSISTOR, RF, 133V, NI-780H-4L RoHS: Compliant	35	1:£65.3200 5:£63.6400 10:£61.9500 50:£55.8300
MRFE6VP100HR5 DISTI # C1S233100301975	NXP Semiconductors	Trans RF MOSFET N-CH 133V 5-Pin Case 465M-01 T/R RoHS: Compliant	23	10:$77.0600 1:$80.9800
MRFE6VP100HR5 DISTI # 2776256	NXP Semiconductors	TRANSISTOR, RF, 133V, NI-780H-4L RoHS: Compliant	27	1:$123.7400 5:$119.6200 10:$113.9200 50:$110.4200

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