S25FL512SAGMFB011

Mfr. #:: S25FL512SAGMFB011
製造商:: Cypress Semiconductor
描述:: NOR Flash Nor
生命週期:: 製造商新產品
數據表:: S25FL512SAGMFB011 數據表
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更多信息:: S25FL512SAGMFB011 更多信息 S25FL512SAGMFB011 Product Details

產品屬性
屬性值

製造商：: 賽普拉斯半導體

產品分類：: NOR閃存

RoHS：: Y

安裝方式：: 貼片/貼片

包裝/案例：: SOIC-16

系列：: S25FL512S

內存大小：: 512 Mbit

最大時鐘頻率：: 133 MHz

接口類型：: SPI

組織：: 64 M x 8

計時類型：: 異步

數據總線寬度：: 8 bit

電源電壓 - 最小值：: 2.7 V

電源電壓 - 最大值：: 3.6 V

電源電流 - 最大值：: 100 mA

資質：: AEC-Q100

打包：: 管子

內存類型：: 也不

速度：: 133 MHz

建築學：: MirrorBit Eclipse

品牌：: 賽普拉斯半導體

濕氣敏感：: 是的

產品類別：: NOR閃存

標準：: 通用閃存接口 (CFI)

出廠包裝數量：: 47

子類別：: 內存和數據存儲

商品名：: 鏡像位

Tags: S25FL512SAGMFB0, S25FL512SAGMFB, S25FL512SAGM, S25FL512SAG, S25FL512SA, S25FL512S, S25FL5, S25FL, S25F, S25

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

S25FL512SAGMFB011 描述

***ress Semiconductor SCT: Serial NOR Flash Memory, 512 Mbit Density, SOIC-16, RoHS

***-Wing Technology: 8542.32.00.51 Surface Mount Tube 64MX8 ic memory 133MHz 7.5mm 512753664bit 2.7V

***ark: TUBE PKGED / 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, SO3016 IN TUBE PACKING

***p One Stop: NOR Flash Serial (SPI, Dual SPI, Quad SPI) 2.5V/3V/3.3V 64M-bit 8M x 8 8ns 8-Pin SOIC

***ment14 APAC: NOR FLASH MEMORY 64MBIT, 133MHZ, SOIC-8; Flash Memory Type:Serial NOR; Size:64Mbit; Configuration:8M x 8bit; IC Interface

***nell: NOR FLASH MEMORY 64MBIT, 133MHZ, SOIC-8; Flash Memory Type: Serial NOR; Memory Size: 64Mbit; Flash Memory Configuration: 8M x 8bit; IC Interface Type: SPI; Memory Case Style: SOIC; No. of Pins: 8Pins; Clock Frequency: 133MHz; Access Time: -; Supply Voltage Min: 2.3V; Supply Voltage Max: 3.6V; Operating Temperature Min: -40°C; Operating Temperature Max: 105°C; Product Range: 3V Serial NOR Flash Memories; RoHS Phthalates Compliant: Yes; MSL: MSL 3 - 168 hours; SVHC: No SVHC (07-Jul-2017)

***ical: NOR Flash Serial (SPI, Dual SPI, Quad SPI) 2.5V/3V/3.3V 128M-bit 16M x 8 8ns 8-Pin SOIC

***-Wing Technology: 3A991.B.1.A Surface Mount Bulk FLASH - NOR ic memory 133MHz 1ms 2.16mm 0.000065A

***nell: NOR FLASH MEMORY 128MBIT, 133MHZ, SOIC-8; Flash Memory Type: Serial NOR; Memory Size: 128Mbit; Flash Memory Configuration: 16M x 8bit; IC Interface Type: SPI; Memory Case Style: SOIC; No. of Pins: 8Pins; Clock Frequency: 133MHz; Access Time: -; Supply Voltage Min: 2.3V; Supply Voltage Max: 3.6V; Operating Temperature Min: -40°C; Operating Temperature Max: 105°C; Product Range: 3V Serial NOR Flash Memories; RoHS Phthalates Compliant: Yes; MSL: MSL 3 - 168 hours; SVHC: No SVHC (07-Jul-2017)

***ical: NOR Flash Serial-SPI 3V/3.3V 256Mbit 256M x 1bit 8ns 16-Pin SOIC W Tube

***ure Electronics: FLASH - NOR Memory IC 256Mb (32M x 8) SPI - Quad I/O 133 MHz 16-SOIC

***ress Semiconductor SCT: Serial NOR Flash Memory, 256 Mbit Density, SOIC-16, RoHS

***p One Stop: NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit 16M x 8 8ns 8-Pin SOIC Tube

***ress Semiconductor SCT: Serial NOR Flash Memory, 128 Mbit Density, SOIC-8, RoHS

***-Wing Technology: Surface Mount Tube 32MX4 FLASH - NOR ic memory 133MHz 8ns 2.159mm 65mA

***p One Stop: NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit 16M x 8 8ns 8-Pin SOIC Tray

***ure Electronics: FLASH - NOR Memory IC 128Mb (16M x 8) SPI - Quad I/O, QPI 133MHz 8-SOIC

***ress Semiconductor SCT: Serial NOR Flash Memory, 128 Mbit Density, SOIC-8, RoHS

***ark: IC, MEMORY, FLASH, 128MBIT, 1.8V, 8SOIC; Flash Memory Type:Serial NOR; Memory Size:128Mbit; Flash Memory Configuration:16M x 8bit; IC Interface Type:SPI; Memory Case Style:SOIC; No. of Pins:8Pins; Clock Frequency:133MHz; Access RoHS Compliant: Yes

***ow.cn: NOR Flash Serial (SPI, Dual SPI, Quad SPI) 2.5V/3V/3.3V 128M-bit 16M x 8 8ns 16-Pin SOIC W

***-Wing Technology: 3A991.B.1.A Surface Mount Bulk 128MX1 ic memory 133MHz 1ms 7.5mm 0.000065A

***ark: 128Mb Qpi/Qspi, 16-Pin Sop 300Mil, Rohs |Integrated Silicon Solution (Issi) IS25LP128-JMLE

S25FL512SAGMFB011 更多信息

S25FL512S FL-S NOR Flash Memory Devices: Cypress S25FL512S FL-S NOR Flash Memory Devices are VIO VCC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single bit serial input and output. Optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer address. The S25FL512S FL-S transfer address and read data on both edges of the clock. By using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the read transfer rate instruction can match traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL512S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. The S25FL512S FL-S NOR is ideal for code shadowing, XIP, and data storage.

Market price

型號	製造商	描述	庫存	價格
S25FL512SAGMFB011 DISTI # S25FL512SAGMFB011-ND	Cypress Semiconductor	IC FLASH 512M SPI 133MHZ 16SOIC RoHS: Compliant Min Qty: 94 Container: Tube	Temporarily Out of Stock	94:$8.5576
S25FL512SAGMFB011 DISTI # 727-S25FL512SAGMFB01	Cypress Semiconductor	NOR Flash Nor RoHS: Compliant	47	1:$11.0000 10:$10.0000 25:$9.2500 50:$8.5000 250:$7.7500 500:$7.2500 1000:$6.6500

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