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FGH40T65UPD

FGH40T65UPD
Mfr. #:
FGH40T65UPD
製造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors 650 V 80 A 268 W
生命週期:
製造商新產品
數據表:
FGH40T65UPD 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FGH40T65UPD 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-247
安裝方式：
通孔
集電極-發射極電壓 VCEO 最大值：
650 V
集電極-發射極飽和電壓：
2.1 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
80 A
Pd - 功耗：
268 W
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
系列：
FGH40T65UPD
打包：
管子
品牌：
安森美半導體/飛兆半導體
柵極-發射極漏電流：
400 nA
產品類別：
IGBT晶體管
出廠包裝數量：
450
子類別：
IGBT
單位重量：
0.225401 oz
Tags
FGH40T6, FGH40T, FGH40, FGH4, FGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-247 Tube
***ark
650V FIELD STOP TRENCH IGBT - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
***ure Electronics
FGH40T65UPD Series 650 V 40 A Field Stop Trench IGBT - TO-247-3
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are essential.
***ark
Igbt Single Transistor, 80 A, 1.7 V, 366 W, 650 V, To-247, 3 Rohs Compliant: Yes
***(Formerly Allied Electronics)
NGTB40N65FL2WG; IGBT Transistor; 80 A 650 V; 1MHz; 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 650V 80A 36000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
NGTB40N65: 650 V 80 A 366 W Through Hole Field Stop II IGBT - TO-247-3
***nell
650V/40A FAST IGBT FSII T; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 366W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ical
Trans IGBT Chip N-CH 650V 100A 340000mW 3-Pin(3+Tab) TO-247 Rail
***r Electronics
Insulated Gate Bipolar Transistor, 100A I(C), 650V V(BR)CES, N-Channel, TO-247AB
***emi
650V, 50A, Field Stop Trench IGBT
***ark
Fs1Tigbt To247 50A 650V Rohs Compliant: Yes
***i-Key
IGBT TRENCH/FS 650V 100A TO247-3
***DA Technology Co., Ltd.
Product Description Demo for Development.
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are essential.
*** Source Electronics
Trans IGBT Chip N-CH 600V 80A 349000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 349W TO-247-3
***ure Electronics
FGH40N60SMD Series 600 V 40 A Flange Mount Field Stop IGBT - TO-247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***nell
IGBT, FIELD STOP, 600V, 40A, TO-247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***p One Stop Global
Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, 650V, 50A, TO247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 305W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;
***ineon SCT
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO247-3, RoHS
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
*** Stop Electro
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
***nell
IGBT, 650V, 50A, TO247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 305W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***ical
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
***eco
Transistor IGBT Chip N-Channel 600 Volt 60A 3-Pin(3+Tab) TO-247
***ark
IGBT, TO-247; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:200W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:- RoHS Compliant: Yes
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
Industrial Power Solutions
ON Semiconductor power semiconductors are clean energy enablers for a variety ofindustrial applications. ON Semiconductor offers IGBTs and MOSFETs featuringhigh current handling capability and low conduction and switching loss;optically isolated gate drivers with wide operating voltage range andhigh common-mode transient immunity; FPS™ controllers designed forhigh-performance power supplies with minimal external components;creative smart dual-coil relay drivers with integrated switches andwafer-level adjust capability for timing customization; and web-basedtools that eliminate tedious bench time and allow popular power supplydesigns to be completed in minutes, saving weeks of time. ON Semiconductorcombines power analog, power discrete and optoelectronic functionaltechnologies; unique combinations of these functions for novelintegrated solutions; and leading process and packing technologies thatreduce size, heat, and cost.Learn More
FGAFx0N60 Field Stop IGBTs
ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
FGHx0T65 650V Field Stop IGBTs
ON Semiconductor FGHx0T65 650V Field Stop IGBTs use innovative field stop trench IGBT technology. These IGBTs offer optimum performance. The FGHx0T65 IGBTs feature positive temperature coefficient for easy parallel operating, high current capability, high input impedance, and tightened parameter distribution. Typical applications include solar inverters, UPS, welders, and digital power generators that require low conduction and switching losses.
型號 製造商 描述 庫存 價格
FGH40T65UPD
DISTI # FGH40T65UPD-ND		ON SemiconductorIGBT 650V 80A 268W TO-247AB
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1350:$2.4476
  • 900:$2.9021
  • 450:$3.2343
  • 10:$4.1610
  • 1:$4.6300
FGH40T65UPD
DISTI # FGH40T65UPD		ON SemiconductorTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Rail - Rail/Tube (Alt: FGH40T65UPD)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$2.0900
  • 900:$2.0900
  • 1800:$2.0900
  • 2700:$2.0900
  • 4500:$1.9900
FGH40T65UPD
DISTI # FGH40T65UPD		ON SemiconductorTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Rail (Alt: FGH40T65UPD)
RoHS: Compliant
Min Qty: 450		Asia - 0
    FGH40T65UPDFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247AB
    RoHS: Compliant    		144
    • 1000:$2.7200
    • 500:$2.8600
    • 100:$2.9800
    • 25:$3.1100
    • 1:$3.3500
    FGH40T65UPD
    DISTI # 512-FGH40T65UPD    		ON SemiconductorIGBT Transistors 650 V 80 A 268 W
    RoHS: Compliant    		6092
    • 1:$4.4100
    • 10:$3.7500
    • 100:$3.2500
    • 250:$3.0900
    • 500:$2.7700
    • 1000:$2.3400
    • 2500:$2.2200
    FGH40T65UPD
    DISTI # 8070773P    		ON SemiconductorIGBTFAIRCHILDFGH40T65UPD, TU338
    • 20:£2.8150
    FGH40T65UPD
    DISTI # 8070773    		ON SemiconductorIGBTFAIRCHILDFGH40T65UPD, PK58
    • 2:£3.3100
    • 20:£2.8150
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    可用性
    庫存:
    Available
    訂購:
    1988
    輸入數量:
    FGH40T65UPD的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$4.41
    US$4.41
    10
    US$3.75
    US$37.50
    100
    US$3.25
    US$325.00
    250
    US$3.09
    US$772.50
    500
    US$2.77
    US$1 385.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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